• Title/Summary/Keyword: Ion channel

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Novel Purification Method of Kv 4.2 Potassium Channel from Rat Brain Membrane

  • Park, Sung-Soo
    • Biomedical Science Letters
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    • v.18 no.2
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    • pp.96-103
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    • 2012
  • Kv 4.2 ion channel protein has an ability to open at subthreshold membrane potentials and to recover quickly from inactivation. That is very important for neuronal signal transmission in vertebrate brain. In order to purify Kv 4.2 protein, the novel purification methods were experimented. The purification procedure utilized chromatography on DE-52 ion exchange column and affinity chromatography on a WGA-Sepharose 4B, and Kv 4.2 affinity column chromatography. It was found that 0.5% (wt./vol.) Triton X-100 detergent in lysis buffer worked well for Kv 4.2 protein solubilization from rat brain membrane. Protein quantitative determination was conducted by BCA method at 562 nm for each purification step to avoid determination interference of protein at 280 nm by detergent. The confirmation of Kv 4.2 existence and amount is performed using by SDS-PAGE/immunoblotting or 96-well dot blotting. The Kv 4.2 without interacting protein that contains carbohydrate, was purified from novel biochemical 3-steps purification method for further research.

Comparison of electrophysiological effects of calcium channel blockers on cardiac repolarization

  • Lee, Hyang-Ae;Hyun, Sung-Ae;Park, Sung-Gurl;Kim, Ki-Suk;Kim, Sung Joon
    • The Korean Journal of Physiology and Pharmacology
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    • v.20 no.1
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    • pp.119-127
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    • 2016
  • Dihydropyridine (DHP) calcium channel blockers (CCBs) have been widely used to treat of several cardiovascular diseases. An excessive shortening of action potential duration (APD) due to the reduction of $Ca^{2+}$ channel current ($I_{Ca}$) might increase the risk of arrhythmia. In this study we investigated the electrophysiological effects of nicardipine (NIC), isradipine (ISR), and amlodipine (AML) on the cardiac APD in rabbit Purkinje fibers, voltage-gated $K^+$ channel currents ($I_{Kr}$, $I_{Ks}$) and voltage-gated $Na^+$ channel current ($I_{Na}$). The concentration-dependent inhibition of $Ca^{2+}$ channel currents ($I_{Ca}$) was examined in rat cardiomyocytes; these CCBs have similar potency on $I_{Ca}$ channel blocking with $IC_{50}$ (the half-maximum inhibiting concentration) values of 0.142, 0.229, and 0.227 nM on NIC, ISR, and AML, respectively. However, ISR shortened both $APD_{50}$ and $APD_{90}$ already at $1{\mu}M$ whereas NIC and AML shortened $APD_{50}$ but not $APD_{90}$ up to $30{\mu}M$. According to ion channel studies, NIC and AML concentration-dependently inhibited $I_{Kr}$ and $I_{Ks}$ while ISR had only partial inhibitory effects (<50% at $30{\mu}M$). Inhibition of $I_{Na}$ was similarly observed in the three CCBs. Since the $I_{Kr}$ and $I_{Ks}$ mainly contribute to cardiac repolarization, their inhibition by NIC and AML could compensate for the AP shortening effects due to the block of $I_{Ca}$.

Reaction of $FeC_5H_5^+$ Ion with Neutral Ferrocene: The Dependence of Reaction Pathways on Its Internal Energy

  • 김병주;소훈영
    • Bulletin of the Korean Chemical Society
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    • v.20 no.10
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    • pp.1181-1185
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    • 1999
  • The reaction of FeC5H5+ ion with ferrocene molecule is investigated using FT-ICR mass spectrometry. FeC5H5+ ions are generated by dissociative ionization of ferrocenes using an electron beam. The reaction gives rise to the formation of the adduct ion, Fe2(C5H5)3+, in competition with charge transfer reaction leading to the formation of ferrocene molecular ion, Fe(C5H5)2+·. The branching ratio of the adduct ion increases as the internal energy of the reactant ion decreases and correspondingly the branching ratio for the charge transfer reaction product decreases. The observed rate of the addition reaction channel is slower than that of the charge transfer reaction. The observation of the stable adduct ions in the low-pressure ICR cell is attributed to the radiative cooling of the activated ion-molecule complex. The mechanism of the reaction is presented to account for the observed experimental results.

High-$T_c$ SQUID Application for Roll to Roll Metallic Contaminant Detector

  • Tanaka, S.;Kitamura, Y.;Uchida, Y.;Hatsukade, Y.;Ohtani, T.;Suzuki, S.
    • Progress in Superconductivity
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    • v.14 no.2
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    • pp.82-86
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    • 2012
  • A sensitive eight-channel high-Tc Superconducting Interference Device (SQUID) detection system for magnetic contaminant in a lithium ion battery anode was developed. Finding ultra-small metallic foreign matter is an important issue for a manufacturer because metallic contaminants carry the risk of an internal short. When contamination occurs, the manufacturer of the product suffers a great loss from recalling the tainted product. Metallic particles with outer dimensions smaller than 100 microns cannot be detected using a conventional X-ray imaging system. Therefore, a highly sensitive detection system for small foreign matter is required. We have already developed a detection system based on a single-channel SQUID gradiometer and horizontal magnetization. For practical use, the detection width of the system should be increased to at least 65 mm by employing multiple sensors. In this paper, we present an 8-ch high-Tc SQUID roll-to-roll system for inspecting a lithium-ion battery anode with a width of 65 mm. A special microscopic type of a cryostat was developed upon which eight SQUID gradiometers were mounted. As a result, small iron particles of 35 microns on a real lithium-ion battery anode with a width of 70 mm were successfully detected. This system is practical for the detection of contaminants in a lithium ion battery anode sheet.

A Study on the Relation of Doping Profile and Threshold voltage in the Ion-Implanted E-IGFET(I) (Ion-Implanted E-IGFET의 Doping Profile과 Threshold 전압과의 관계에 관한 연구(I))

  • Son, Sang-Hui;O, Eung-Gi;Gwak, Gye-Dal
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.4
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    • pp.58-64
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    • 1984
  • A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.

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Ginsentology III;Identifications of Ginsenoside Interaction Sites for Ion Channel Regulation

  • Choi, Sun-Hye;Shin, Tae-Joon;Lee, Byung-Hwan;Lee, Jun-Ho;Hwang, Sung-Hee;Pyo, Mi-Kyung;Nah, Seung-Yeol
    • Journal of Ginseng Research
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    • v.32 no.2
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    • pp.99-106
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    • 2008
  • A ligand - whether an endogenous hormone, neurotransmitter, exogenous toxin or synthetic drug - binds to plasma membrane proteins (e.g., ion channels, receptors or other functional proteins) to exert its physiological or pharmacological effects. Ligands can also have functional groups, showing stereospecificity for interaction sites on their counterpart plasma membrane proteins. Previous reports have shown that the ginsenoside Rg$_3$, a bioactive ginsenoside, meets these criteria in that: 1) an aliphatic side chain of $Rg_3$ plays a role as a functional group, 2) Rg$_3$ regulates voltage- and ligand-gated ion channels in a stereospecific manner with respect to carbon-20, and 3) $Rg_3$ regulates subsets of ligand-gated and voltage-gated ion channels through specific interactions with identified amino acid residues inside the channel pore, in the outer pore entryway, or in toxin binding sites. Rg$_3$, therefore, could be a candidate for a novel ginseng-derived glycosidic ligand regulating ion channels and receptors. This review will examine how Rg$_3$ regulates voltage-gated and ligand-gated ion channels through interactions with its target proteins in the plasma membrane. Hopefully, this review will advance understanding of ginseng pharmacology at the cellular and molecular levels.

The Substates with Mutants That Negatively Charged Aspartate in Position 172 Was Replaced with Positive Charge in Murine Inward Rectifier Potassium Channel (Murine Kir2.1)

  • So, I.;Ashmole, I.;Stanfield, P.R.
    • The Korean Journal of Physiology and Pharmacology
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    • v.7 no.5
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    • pp.267-273
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    • 2003
  • We have investigated the effect on inducing substate(s) of positively charged residues replaced in position 172 of the second transmembrane domain in murine inward rectifier potassium channels, formed by stable or transient transfection of Kir2.1 gene in MEL or CHO cells. Single channel recordings were obtained from either cell-attached patches or inside-out patches excised into solution containing 10 mM EDTA to rule out the effect of $Mg^{2+}$ on the channel gating. The substate(s) could be recorded with all mutants D172H, D172K and D172R. The unitary current-voltage (I-V) relation was not linear with D172H at $pH_i$ 6.3, whereas the unitary I-V relation was linear at $pH_i$ 8.0. The relative occupancy at $S_{LC}$ was increased from 0.018 at $pH_i$ 8.0 to 0.45 at $pH_i$ 5.5. In H-N dimer, that was increased from 0.016 at $pH_i$ 8.0 to 0.23 at $pH_i$ 5.5. The larger the size of the side chain or $pK_a$ with mutants (D172H, D172K and D172R), the more frequent the transitions between the fully open state and substate within an opening. The conductance of the substate also depended upon the pKa or the size of the side chain. The relative occupancy at substate $S_{LC}$ with monomer D172K (0.50) was less than that in K-H dimer (0.83). However, the relative occupancy at substate with D172R (0.79) was similar to that with R-N dimer (0.82). In the contrary to ROMK1, positive charge as well as negative charge in position 172 can induce the substate rather than block the pore in murine Kir2.1. The single channel properties of the mutant, that is, unitary I-V relation, the voltage dependence of the mean open time and relative occupancy of the substates and the increased latency to the first opening, explain the intrinsic gating observed in whole cell recordings.

Performance Evaluation of Natural Jute Fiber Reinforced Recycled Coarse Aggregate Concrete Using Response Surface Method (반응표면 분석법을 이용한 천연마섬유보강 순환굵은골재 콘크리트의 성능 평가)

  • Jeon, Ji Hong;Kim, Hwang Hee;Kim, Chun Soo;Yoo, Sung Yeol;Park, Chan Gi
    • Journal of The Korean Society of Agricultural Engineers
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    • v.56 no.4
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    • pp.21-28
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    • 2014
  • In this study, evaluated ware the strength and durability of the vegetated water purification channel concrete to which recycled aggregates, hawang-toh and jute were applied. Box-Behnken method of response surface analysis in statistics was applied to the experimental design. Experimental variables are as follows, recycled coarse aggregates, hawang-toh, blast-furnace slag and jute fiber. In the experiment, conducted were the tests of compressive strength, chloride ion penetration, abrasion resistance and impact resistance the replacement rate effects of the recycled aggregates, blast-furnace slag and hwang-toh on the performance of vegetated water purification channel concrete were analyzed by using the response surface analysis method on the basis of the experimental results. In addition, an optimum mixing ratio of vegetated water purification channel concrete was determined by using the experimental results. The optimum mixing ratio was determined to be in 10.0% recycled coarse aggregates, 60.0% blast-furnace slag, 10.1% hwang-toh and 0.16% jute fiber. The compressive strength, chloride ion penetration, abrasion rate, and impact number of fracture test results of the optimum mixing ratio were 24.1 MPa, 999 coulombs, 10.30 g/mm3, and 20 number, respectively.

Study on the Fabrication of EPROM and Their Characteristics (EPROM의 제작 및 그 특성에 관한 연구)

  • 김종대;강진영
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.5
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    • pp.67-78
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    • 1984
  • EAROM device is an n-channel MOS transistor with a control gate stack ed on the floating gate. On account of channel injection type, channel lengths are designed 4-8 $\mu$m and chinnel widths 5-14 $\mu$m. These devices which have fourstructures of different type control gate are designed by NMOS 5 $\mu$m design rule and fabricated by double polysilicon gate NMOS Process. Double ion implantation is applied to increase punchthrough voltage and gate-controlled channel breakdown voltage. The drain and gate voltage for programming was 13-17V and 20-25V, respectively. EPROM cell fabricated could be erased not by optical method but by electrical method. The result of charge retention test showed decrease in stored charges by 4% after 200 hours at 1$25^{\circ}C$.

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