• Title/Summary/Keyword: Ion channel

Search Result 442, Processing Time 0.027 seconds

Dual Nano-Electrospray and Mixing in the Taylor Cone

  • Radionova, Anna;Greenwood, David R.;Willmott, Geoff R.;Derrick, Peter J.
    • Mass Spectrometry Letters
    • /
    • v.7 no.1
    • /
    • pp.21-25
    • /
    • 2016
  • Dual-channel nano-electrospray has recently become an ionization technique of great promise especially in biological mass spectrometry. This unique approach takes advantage of the mixing processes that occurs during electrospray. Understanding in more detail the fundamental principles influencing spray formation further study of the origins of the mixing processes: (1) in a Taylor cone region, (2) in charged droplets or (3) in both environments. The dual-channel emitters were made from borosilicate theta-shape glass tubes (O.D. 1.2 mm) and had a tip diameters of less than 4 μm. Electrical contact was achived by deposition of a thin film of an appropriate metal onto the surface of the emitter. The experimental investigation of the Taylor cone formation in a dual-channel electrospray emitter has been carried out by injection of polystyrene beads (diameter 3 μm) at very low concentrations into one of the channels of the non-tapered theta-glass tubes. High-speed camera experiments were set up to visualize the mixing processes in Taylor cone regions for dual-channel emitters. Mass spectra from dual nano-electrospray are presented.

Modeling and characteristics of $K^+$ ion-exchanged waveguide-type optical coupler ($K^+$ 이온교환 도파로형 광결합기의 모델링 및 특성)

  • 천석표;박태성;정홍배
    • Electrical & Electronic Materials
    • /
    • v.9 no.3
    • /
    • pp.259-264
    • /
    • 1996
  • In this study, we performed a modeling for $K^{+}$ ion-exchanged diffused channel waveguide and waveguide-type optical coupler by Wentzel-Kramer-Brillouin(WKB) dispersion equation, normalized field distribution equation for mode and coupled mode theory, and examined the optical-power-dividing of the optical coupler fabricated by using the modeling condition. The optical-power-dividing was observed at the waveguide-type optical coupler with 3[.mu.m] line-width, 6[.mu.m] space between channel waveguides, and 3[mm] interaction length.h.

  • PDF

Electrophysiological Properties of Ion Channels in Ascaris suum Tissue Incorporated into Planar Lipid Bilayers

  • Park, Kwon Moo;Kim, Sun-Don;Park, Jin Bong;Hong, Sung-Jong;Ryu, Pan Dong
    • Parasites, Hosts and Diseases
    • /
    • v.59 no.4
    • /
    • pp.329-339
    • /
    • 2021
  • Ion channels are important targets of anthelmintic agents. In this study, we identified 3 types of ion channels in Ascaris suum tissue incorporated into planar lipid bilayers using an electrophysiological technique. The most frequent channel was a large-conductance cation channel (209 pS), which accounted for 64.5% of channels incorporated (n=60). Its open-state probability (Po) was ~0.3 in the voltage range of -60~+60 mV. A substate was observed at 55% of the main-state. The permeability ratio of Cl- to K+ (PCl/PK) was ~0.5 and PNa/PK was 0.81 in both states. Another type of cation channel was recorded in 7.5% of channels incorporated (n=7) and discriminated from the large-conductance cation channel by its smaller conductance (55.3 pS). Its Po was low at all voltages tested (~0.1). The third type was an anion channel recorded in 27.9% of channels incorporated (n=26). Its conductance was 39.0 pS and PCl/PK was 8.6±0.8. Po was ~1.0 at all tested potentials. In summary, we identified 2 types of cation and 1 type of anion channels in Ascaris suum. Gating of these channels did not much vary with voltage and their ionic selectivity is rather low. Their molecular nature, functions, and potentials as anthelmintic drug targets remain to be studied further.

Analytical Threshold Voltage Model of Ion-Implanted MOSFET (이온 주입된 Mosfet의 문턱 전압의 해석적 모델)

  • Lee, Hyo-Sik;Jin, Ju-Hyeon;Gyeong, Jong-Min
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.22 no.6
    • /
    • pp.58-62
    • /
    • 1985
  • Analytical threshold voltage model of small size ion-implanted MOSFET's is proposed. Yau's model which is only applicable to MOSFET's with constant doping concentration was modified to handle the MOSFET's with nonuniform channel doping concentration and bird's beak, whereby the short and narrow-channel effect was quantitively described. Threshold voltage model for short-channel MOSFET's was derived by approximating the SUPREM result of channel impurity profile to a 2-step profile, and the narrow width be-haviour was successfully described using thr'weighting factor'to accommodate the doping profile in the bird's beak region.

  • PDF

Thrust Performance and Plasma Acceleration Process of Hall Thrusters

  • Tahara, Hirokazu
    • Proceedings of the Korean Society of Propulsion Engineers Conference
    • /
    • 2004.03a
    • /
    • pp.262-270
    • /
    • 2004
  • Basic experiments were carried out using the THT-IV low-power Hall thruster to examine the influences of magnetic field shape and strength, and acceleration channel length on thruster performance and to establish guidelines for design of high-performance Hall thrusters. Thrusts were measured with varying magnetic field and channel structure. Exhaust plasma diagnostic measurement was also made to evaluate plume divergent angles and voltage utilization efficiencies. Ion current spatial profiles were measured with a Faraday cup, and ion energy distribution functions were estimated from data with a retarding potential analyzer. The thruster was stably operated with a highest performance under an optimum acceleration channel length of 20 mm and an optimum magnetic field with a maximum strength of about 150 Gauss near the channel exit and with some shape considering ion acceleration directions. Accordingly, an optimum magnetic field and channel structure is considered to exist under an operational condition, related to inner physical phenomena of plasma production, ion acceleration and exhaust plasma feature. A new Hall thruster was designed with basic research data of the THT-IV thruster. With the thruster with many considerations, long stable operations were achieved. In all experiments at 200-400 V with 1.5-3 mg/s, the thrust and the specific impulse ranged from 15 to 70 mN and from 1100 to 2300 see, respectively, in a low electric power range of 300~1300 W. The thrust efficiency reached 55 %. Hence, a large map of the thruster performance was successfully made. The thermal characteristics were also examined with data of both measured and calculated temperatures in the thruster body. Thermally safe conditions were achieved with all input powers.

  • PDF

A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short-Channel Ion-Implanted Silicon MESFET's

  • Jit, S.;Morarka, Saurabh;Mishra, Saurabh
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.5 no.3
    • /
    • pp.173-181
    • /
    • 2005
  • A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

A Stochastic Model of Voltage-Gated Ion Channel

  • Lee, Kwonmoo;Wokyung Sung;Gabriel Weinreb
    • Proceedings of the Korean Biophysical Society Conference
    • /
    • 1997.07a
    • /
    • pp.35-35
    • /
    • 1997
  • We model the voltage-gated cation channel on the basis of stochastic process by taking into account transmembrane movement of S4 group interacting electrostatically with permeant ions. It is assumed that the interaction between the ion and S4 group is repulsive harmonic force and the ionic motion is much faster than that of the S4 group.(omitted)

  • PDF

TASK-2 Expression Levels are Increased in Mouse Cryopreserved Ovaries

  • Kang, Dawon;Choe, Changyong;Kim, Chang-Woon;Goo, Ae Jin;Han, Jaehee
    • Journal of Embryo Transfer
    • /
    • v.30 no.4
    • /
    • pp.277-282
    • /
    • 2015
  • Cryopreservation affects osmotic tolerance and intracellular ion concentration through changes in expression levels of water and ion channels. Control of these changes is important for cell survival after cryopreservation. Relatively little is known about changes in $K^+$ channel expression compared to water channel expression. This study was performed to investigate changes in TASK-2 channel (KCNK5: potassium channel, subfamily K, member 5), a member of two-pore domain $K^+$ channel family, in cryopreserved mouse ovaries. Cryopreservation increased TASK-2 mRNA expression in mouse ovaries. In addition, TASK-2 protein expression was upregulated in vitrified and slowly frozen ovaries. TASK-2 protein was expressed in all area of granulosa cells that surround the oocyte within the follicle, except nucleus. Viability of cells overexpressed with TASK-2 was higher than that of vector-transfected cells. Our results found that TASK-2 expression was increased by cryopreservation and overexpression of TASK-2 decreased cryopreservation-induced cell death. These results suggest that TASK-2 upregulation might reduce cryodamage.

Mechanism for Gating of Gap Junction Channel. (간극결합채널의 개폐기전)

  • 오승훈
    • Journal of Life Science
    • /
    • v.14 no.5
    • /
    • pp.882-890
    • /
    • 2004
  • Gap junction is a membrane structure facilitating the direct transmission of several ions and small molecules between two cells. It is also called an 'intercellular channel' to distinguish it from other well-known cellular channels (e.g. sodium and potassium channels). Gap junction channels are not passive conduits, rather the ion channels modulated by several stimuli including pH, calcium ion, voltage, and a chemical modification (mainly known as phosphorylation). Among them, the effects of voltage on the gating of gap junction channels have been well studied. Gap junction channels are more sensitive to the transjunctional potential ($V_j$) between two cells rather than the membrane potential($V_m$) between inside and outside the cell. In this review, I will summarize the general properties of gap junction channel and discuss the gating mechanism for the gap channels.

Effects of Ginsenosides on $GABA_A$ Receptor Channels Expressed in Xenopus Oocytes

  • Choi, Se-Eun;Choi, Seok;Lee, Jun-Ho;Paul J.Whiting;Lee, Sang-Mok;Nah, Seung-Yeol
    • Archives of Pharmacal Research
    • /
    • v.26 no.1
    • /
    • pp.28-33
    • /
    • 2003
  • Ginsenosides, major active ingredients of Panax ginseng, are known to regulate excitatory ligand-gated ion channel activity such as nicotinic acetylcholine and NMDA receptor channel activity. However, it is not known whether ginsenosides affect inhibitory ligand-gated ion channel activity. We investigated the effect of ginsenosides on human recombinant $GABA_A$ receptor (${\alpha}_1{\beta}_1{\gamma}_{2s}$) channel activity expressed in Xenopus oocytes using a two-electrode voltage-clamp technique. Among the eight individual ginsenosides examined, namely, $Rb_1$, $Rb_2$, Rc, Rd, Re, Rf, $Rg_1$ and $Rg_2$, we found that Rc most potently enhanced the GABA-induced inward peak current ($I_{GABA}$). Ginsenoside Rc alone induced an inward membrane current in certain batches of oocytes expressing the $GABA_A$ receptor. The effect of ginsenoside Rc on $I_{GABA}$ was both dose-dependent and reversible. The half-stimulatory concentration ($EC_{50}$) of ginsenoside Rc was 53.2$\pm$12.3 $\mu$M. Both bicuculline, a $GABA_A$ receptor antagonist, and picrotoxin, a $GABA_A$ channel blocker, blocked the stimulatory effect of ginsenoside Rc on $I_{GABA}$. Niflumic acid (NFA) and 4,4'-diisothiocyanostilbene-2,2'-disulfonic acid (DIDS), both $CI^{-1}$ channel blockers, attenuated the effect of ginsenoside Rc on I$I_{GABA}$. This study suggests that ginsenosides regulated $GABA_A$ receptor expressed in Xenopus oocytes and implies that this regulation might be one of the pharmacological actions of Panax ginseng.