• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1372-1375
• /
• 2007

MgO thin films were deposited by $O^+$ IBAD method and results showed assisting oxygen ion beam energy plays a significant role in characteristics of MgO thin films. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when oxygen ion beam energy was 300 eV.

• Journal of Information Display
• /
• v.7 no.1
• /
• pp.12-18
• /
• 2006

We investigated the horizontal alignment properties such as surface morphology, pretilt angle, and polar and azimuthal anchoring energy of organic alignment material-coated surface treated by ion beam. In this investigation the energy and incident angle of ion beam were changed. We also fabricated an in-plane switching (IPS) cell by ion beam alignment. The results showed similar voltage-transmittance characteristics to those of a rubbed cell and better dark state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.399-399
• /
• 2007

Recently, it is widely studied to liquid crystal (LC) alignment using ion-beam exposure. Because conventional rubbing method has some problems such as defects from dust and electrostatic charges during rubbing process. Therefore rubbing-free techniques like ion-beam method are strongly required. We studied LC alignment by controlling ion-beam energy density and electro-optical (EO) characteristics of twisted nematic LC on the polyimide surface. In this experiment, a good uniform alignment of the nematic liquid crystal (NLC) with the ion-beam exposure on the polyimide (PI) surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) on PI surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.124-127
• /
• 2002

LC aligning capabilities and the variation of pretilt angles with ion beam irradiation on the a-C:H thin films, and electro-optical (EO) performances of the ion beam aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the a-C:H thin film were studied. A high pretilt angle of $3.5{^{\circ}}$ via ion beam irradiation on the a-C:H thin film was measured. Also, the LC pretilt angle decreased due to the increase in surface roughness at over 2 min of IB exposure time. It is considered that this roughness increase due to increasing IB exposure time that generated destroy of oriented rings of atoms related to LC alignment. An excellent voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the a-C:H thin film for 1 min. Also, a faster response time for the ion beam aligned TN-LCD with oblique ion beam exposure on the a-C:H thin film for 1 min can be achieved. Finally, the residual DC property of the ion beam aligned TN-LCD with ion beam exposure of 1 min on the a-C:H thin film is almost same as that of the rubbing aligned TN-LCD on a PI surface.

• Journal of the Korean Vacuum Society
• /
• v.10 no.4
• /
• pp.396-402
• /
• 2001

MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

• Journal of the Korean Vacuum Society
• /
• v.13 no.2
• /
• pp.79-85
• /
• 2004

Secondary ion mass spectrometry(SIMS) and glow discharge mass spectrometry(GDMS) were used to determine the impurity concentrations of hydrogen, carbon, and oxygen elements in the Cu and Ta films, and the results of SIMS and GDMS analysis were carefully considered. The Cu and Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V(Cu films) or -125 V(Ta films) using a non-mass separated ion beam deposition method. As a result of SIMS with Cs+ ion beam, in the case of the Cu and Ta films deposited without the substrate bias voltage, many strong peaks were observed, which is considered to be detected as a the cluster state such as CxHx, OxHx, CxOxHx. All the peaks of SIMS results could be interpreted by the combination of these dominant impurities. Moreover, it was confirmed that the quantitative results of GDMS analysis were accordant to the SIMS results.

• Applied Science and Convergence Technology
• /
• v.23 no.5
• /
• pp.261-264
• /
• 2014

$SrTiO_3$ (STO) single crystal irradiated with a 3-MeV proton beam exhibits blue and green mixed luminescence. However, the same proton beam when used to irradiate STO with a very thin layer of deposited Pt does not show any luminescence. This Pt layer prevents any damage which may otherwise be caused by arcing, which stems from the accumulated surface voltage of tens of kV due to the charge induced by secondary electrons on the surface of the insulator during the ion beam irradiation process. Hence, the luminescence of ion-irradiated STO originates from the modification of the STO surface layer caused by arcing rather than from any direct ion beam irradiation effect. STO treated with atmospheric-pressure plasma, a simple and cost-effective method, also exhibits the same type of blue and green mixed luminescence as STO treated with an ion beam, as the plasma also creates a layer of surface damage due to arcing.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.16 no.2
• /
• pp.70-77
• /
• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.5
• /
• pp.382-386
• /
• 2019

The alignment characteristics of liquid crystal (LC) molecules on a solution-derived lanthanum zinc oxide (LZO) film under ion-beam irradiation were demonstrated. Using the solution process, an LZO film was fabricated on the glass substrate and cured at $100^{\circ}C$. Afterwards, ion-beam irradiation was performed following the LC alignment method. Using this film, an LC cell was fabricated and the characteristics of the LC alignment were verified. Cross polarizing microscopy and the crystal rotation method were used to investigate the alignment state of the LC molecules on the LZO films. Furthermore, field emission scanning electron microscopy and X-ray photoelectron spectroscopy were used to explore the effect of the ion-beam irradiation on the LZO film. Through these, it was confirmed that the ion-beam irradiation induced surface modification, which demonstrated anisotropic physical and chemical surface characteristics. Due to this, uniform LC alignment was achieved. Finally, the residual DC and anchoring energy of the LC cell based on the LZO films were measured using a capacitance-voltage curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04a
• /
• pp.43-43
• /
• 2008

Recently, it is widely studied to liquid crystal (LC) alignment using ion-beam exposure. Because conventional rubbing method has some problems such as defects from dust and electrostatic charges and rubbing scratch during rubbing process. Moreover rubbing method needs cleaning process to remove these defects. Therefore rubbing-free techniques like ion-beam method are strongly required. We studied LC alignment by controlling ion-beam irradiation angles and electro-optical (EO) characteristics of twisted nematic LC on the polyimide surface. In this experiment, a good uniform alignment of the nematic liquid crystal (NLC) with the ion-beam exposure on the polyimide (PI) surface was observed. We also achieved low pretilt angle as function of ion-beam irradiation angles. X-ray photoelectron spectroscopic (XPS) analysis provided chemical evidence for LC alignment by controlling ion-beam irradiation angles. In addition, it can be achieved the good EO properties of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) on PI surface. Some other experiments results and discussion will be included in the presentation.