Evaluation of the MgO Protective Layer Deposited by Oxygen Ion-Beam-Assisted-Deposition Method in ac PDPs

  • Li, Zhao-Hui (Department of Electronics Engineering, Kyungwon University) ;
  • Cho, Eou-Sik (Department of Electronics Engineering, Kyungwon University) ;
  • Hong, Seong-Jae (Department of Electronics Engineering, Kyungwon University) ;
  • Kwon, Sang-Jik (Department of Electronics Engineering, Kyungwon University)
  • Published : 2007.08.27

Abstract

MgO thin films were deposited by $O^+$ IBAD method and results showed assisting oxygen ion beam energy plays a significant role in characteristics of MgO thin films. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when oxygen ion beam energy was 300 eV.

Keywords