• Applied Science and Convergence Technology
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• v.25 no.5
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• pp.92-97
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• 2016

Surface erosion using focused ion beam irradiation is the most promising technology for the realization of micro/nanofabrication. However, accurate fabrication of predefined structures is still challenging. This article introduces a single step surface driving method to fabricated predefined curved structures. The previously reported multi step surface driving method (MSDM) has been modified so that a single ion dose profile can be used instead of multiple ion dose profiles. Experimental realization of the method is presented with the fabrication of predefined curved surfaces as well as reference to surface propagation theory. For the purpose of verification, simulations are performed on the basis of a sound mathematical model.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.5-9
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• 2004

Microcircuit fabrication requires precise control of impurities in tiny regions of the silicon. These regions must be interconnected to create components and VLSI circuits. The patterns to define such regions are created by lithographic processes. In order to image features smaller than 70 nm, it is necessary to employ non-optical technology (or next generation lithography: NGL). One such NGL is extreme ultra-violet lithography (EUVL). EUVL transmits the pattern on the wafer surface after reflecting ultra-violet through mask pattern. If particles exist on the blank mask, it can't transmit the accurate pattern on the wafer and decrease the reflectivity. It is important to care the blank mask. We removed the particles on the wafer using focused ion beam (FIB). During removal, FIB beam caused damage the multi layer mask and it decreased the reflectivity. The relationship between particle removal and reflectivity is examined: i) transmission electron microscope (TEM) observation after particle removal, ii) reflectivity simulation. It is found that the image mode of FIB is more effective for particle removal than spot and bar mode.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.211-213
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• 2002

The purpose of this work is acquiring some parameters of therapeutic heavy ion beams after penetrating a thick target. The experiments were performed using a pencil-like $\^$12/C beam of about 3 mm in diameter from NIRS-HIMAC, and the data were taken at several points of the target thickness for $\^$12/C beam of 290 MeV/u and 400 MeV/u. By the simultaneous measurements using some detectors, the atomic number of each fragment particle was identified, and the beam profile, the dose distribution and the LET spectrum for each element were derived.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.147-148
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• 2010

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.368-368
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• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• Journal of Electrochemical Science and Technology
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• v.6 no.3
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• pp.75-80
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• 2015

We introduce a new synthesis method to prepare small TiO₂ nanoparticles with a narrow particle size distribution, which is achieved by electron beam (E-beam) irradiation. The effects of E-beam irradiation on the synthesis of TiO₂ nanoparticles and the electrochemical performance of TiO₂ nanoparticles as alternative anode materials for Li-ion batteries are investigated. The TiO₂ nanoparticles induced by E-beam irradiation present better cycling performance and rate capability than the TiO₂ nanoparticles synthesized by normal hydrolysis reaction. The better electrochemical performance is attributed to small particle size and narrow particle size distribution, resulting in the large surface area that provides innumerable reaction sites and short diffusion length for Li⁺ through TiO₂ nanoparticles.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.129-133
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• 2007

Focused Ion Beam(FIB) systems is a useful tool for the fabrication of micro-nano scale structures. In this study, the effects of FIB etching on the Au microstructure are systematically investigated. As the fabrication parameters, ion dose, dwell time and beam overlap ratio are studied. First, the increases of Ga ion dose makes the milling yield higher and the sidewall of milling profile steeper. Dwell time is found to have little effects on the milling profile due to the relatively large milling area of $1\times1{\mu}m^2$ used in this study. However, beam overlap significantly affects not only milling rate but also milling profile. As the beam overlap ratio changes from positive to negative, the development of regular cross-stripe patterns at the bottom with low milling rate is observed.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.4
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• pp.128-133
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• 2009

Focused-ion-beam (FIB) system is capable of both machining and measuring in nano-scale; hence nano-scale focusing quality is important. This paper investigates design parameters of two electrostatic lenses in order to achieve the best ion beam focusing performance. Commercial SIMION simulator is used to optimize the dimensions of the condenser and objective lenses and investigate the influence of assembly error on focusing quality The simulation results show that the beam focusing quality is not influenced by angle deviation within ${\pm}0.02\;deg$ and geometrical eccentricity within ${\pm}50$ micrometers.

• Korean Journal of Materials Research
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• v.13 no.9
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• pp.587-592
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• 2003

The thin films of 316L stainless steel were made on glass and S45C substrate by Ion beam assisted deposition with reactive atmosphere of argon and nitrogen. The films were deposited at the various conditions of ion beam power and the ratios of Ar/$N_2$gas. Properties of these films were analyzed by glancing x-ray diffraction method(GXRD), AES, potentiodynamic test, and salt spray test. The results of GXRD showed that austenite phase could be appeared by $N_2$ion beam treatment and the amount of austenite phase increased with the amount of nitrogen gas. The films without plasma ion source treatment had the weak diffraction peak of ferrite phase. But under the Ar plasma ion beam treatment, the strong diffraction peaks of ferrite phase were appeared and the grain size was increased from 12 to 16 nm. Potentiodynamic polarization test and salt spray test indicated that the corrosion properties of the STS 316L films with nitrogen ion source treatment were better than bulk STS 316L steel and STS 316L films with Ar ion source treatment.