• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.752-755
• /
• 2006

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.149-152
• /
• 2003

Soruce/drain (or, LDD) formation technology is critical to device reliability especially in the case of short channel LTPS-TFT devices. Ion shower doping with a main ion source of $P_2H_x$ was conducted on ELA Poly-Si. We report the effects of annealing methods on dopant activation and damage recovery in ion-shower doped poly-Si.

• Journal of the Korean Ceramic Society
• /
• v.55 no.4
• /
• pp.307-324
• /
• 2018

Rechargeable lithium-ion batteries (LIBs) have been rapidly expanding from IT based applications to uses in electric vehicles (EVs), smart grids, and energy storage systems (ESSs), all of which require low cost, high energy density and high power density. The increasing demand for LIBs has resulted in increasing price of the lithium source, which is a major obstacle to wider application. To date, the possible depletion of lithium resources has become relevant, giving rise to the interest in Na-ion batteries (NIBs) as promising alternatives to LIBs. A lot of transition metal compounds based on conversion-alloying reaction have been extensively investigated to meet the requirement for the anodes with high energy density and long life-time. In-depth understanding the electrochemical reaction mechanisms for the transition metal compounds makes it promising negative anode for NIBs and provides feasible strategy for low cost and large-scale energy storage system in the near future.

• Proceedings of the KIEE Conference
• /
• 1999.07e
• /
• pp.2253-2255
• /
• 1999

Plasma source ion implantation (PSII) is a non-line-of-sight technique for surface modification of materials which is effective for non-planar targets. Properties such as hardness, corrosion resistance, wear resistance and friction can be improved without affecting the bulk properties of the material. Type 304 austenitic stainless steel was treated by nitrogen plasma ion implantation at a target bias of -50kV. Surface properties, including microhardness and ion depth profile, were studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.4
• /
• pp.381-387
• /
• 2008

Neutron production rate in spherically convergent beam fusion(SCBF) device as a portable neutron source strongly depends on the ion current and the grid cathode structure. In this paper, as the process of design and analysis, Design of Experiment(DOE) based on the results by Finite Element Method-Flux Corrected Transport(FEM-FCT) method is employed to calculate the ion current. This method is very useful to find optimal design conditions in a short time. Number of rings, radius of rings, and distance between the grid cathode and center are selected as control factors. From the results in the optimized model, the higher ion current is calculated and deeper potential well is also observed.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.6
• /
• pp.930-934
• /
• 2005

A chloroform membrane system containing a given mixture of benzylaza-12-crown-4 and oleic acid is introduced for the selective and efficient transport of $Pb^{2+}$ ion. The transport was capable of moving metal ions ‘up-hill’. In the presence of ${S_2O_3}^{2-}$ion as a suitable metal ion acceptor in the receiving phase, the amount of lead ion transport across the liquid membrane after 150 minutes is (95.0 ${\pm}$ 1.7)%. The selectivity and efficiency of lead transport from aqueous solution containing $Tl^+,\;Ag^+,\;Mg^{2+},\;Ca^{2+},\;Co^{2+},$ $Ni^{2+},\;Cu^{2+},\;Zn^{2+},\;Hg^{2+}$ and $Cd^{2+}$were investigated. In the presence of thiosulfate as a suitable masking agent in the source phase, the interfering effects of $Ag^+\;and\;Cu^{2+}$ were diminished drastically.

• Journal of the Korean Society for Precision Engineering
• /
• v.22 no.5 s.170
• /
• pp.175-180
• /
• 2005

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. In this research, fabrication of micro plasma electrode was carried out using FIB. The one of problems of FIB-sputtering is the redeposition of material including Ga+ ion source during sputtering process. Therefore the effect of the redeposition was verified by EDX. And the micro plasma electrode of copper was fabricated by FIB.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.60-60
• /
• 2000

The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.

• Journal of the Korean Vacuum Society
• /
• v.18 no.3
• /
• pp.236-243
• /
• 2009

Proton Engineering Frontier Project (PEFP) has supplied the metal ions to users by using an installed metal ion implanter of 120 keV. At present a feasibility study is being performed for a cobalt ion implantation. For a cobalt ion extraction we studied to sustain the high temperature($648^{\circ}C$) for metal ions vaporization from a cobalt chloride powder by using an alumina crucible in the ion source. The temperature condition of the crucible was satisfied with the plasma generation at the arc current of 120V and EHC power of 250W. The extracted beam current of $Co^+$ ions was dependent on the arc current in the plasma. The maximum beam current was $100{\mu}A$ at 0.18A of the arc current. The 3 peak currents of the extracted ions such as $Co^+$, $CoCl^+$ and $Cl^+$ were obtained by adjusting a mass analyzing magnet and the $Co^+$ ion beam peak current fraction as around 70% in the sum of the peak currents. The fluence of the implanted cobalt ions at the $10{\mu}A$ of the beam current and 90 minutes of the implantation time into an aluminum sample as measured around $1.74{\times}10^{17}#/cm^2$ by a quantitative analysis method of RBS (Rutherford Backscattering Spectrometry).

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.06a
• /
• pp.151-151
• /
• 1998