• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.123-127
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• 2015

Soda-lime silicate (SLS) glass was strengthened by ion exchange for application of thin and lightweight bulletproof windows. The optimal conditions for ion exchanged SLS glass (thickness of 3 and 10 mm) at $480^{\circ}C$ were 10 and 17 min, respectively. The Vickers hardness values of the strengthened SLS glass samples with thicknesses of 3 and 10 mm were $5.9{\pm}0.22$ and $6.7{\pm}0.17GPa$, respectively, which values were about 22% higher than those of parent SLS glass. By laminating a multilayer defense film and polycarbonate sheet with ion exchanged SLS glass, we were able to make a thin and lightweight bulletproof window (24.25 mm, 4.57 kg, $50.06kg/m^2$, $V_{50}$ 901.8 m/s). As a result, the thickness of the bulletproof window was decreased by about 39% from 40 to 24.25 mm. The light transmittance in the visible range satisfied the standard (over 76%) for bulletproof windows.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.609-615
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• 2011

This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

• Transactions on Electrical and Electronic Materials
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• v.9 no.5
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• pp.206-208
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• 2008

Implantation of metals and ceramics with ions of nitrogen and other species has improved surface properties such as friction, wear and corrosion in numerous industrial applications. In recent years, PCB drills tend to be more minimized increasingly as the electronics components have been more highly accumulated and minimized. Therefore nitrogen ion implantation was performed onto PCB drill (0.15 & 0.3 mm in diameter), in order to investigate mechanical properties of WC-Co cermets surface through Nano-indentation tests. PCB drill was implanted at energy of 70 keV, 90 keV, 120 keV and with the dose range of $1{\times}10^{17}$ and $5{\times}10^{17}\;ions/cm^{2}$. After ion implantation, WC-Co PCB drill bits was tested in actual operating situation to apply cutting tools industry and is concluded that the life time of nitrogen ion implanted PCB drills is one and a half times longer than the unimplanted.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.76-80
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• 2019

The characteristics of a titanium oxide layer prepared using a plasma electrolytic oxidation (PEO) process were investigated, using an extended gate ion sensitive field effect transistor (EG-ISFET) to confirm the layer's capability to react with hydrogen ions. The surface morphology and element distribution of the PEO-processed titanium oxide were observed and analyzed using field-emission scanning-electron microscopy (FE-SEM) and energy-distribution spectroscopy (EDS). The titanium oxide prepared by the PEO process was utilized as a hydrogen-ion sensing membrane and an extended gate insulator. A commercially available n-channel enhancement MOS-FET (metal-oxide-semiconductor FET) played a role as a transducer. The responses of the PEO-processed titanium oxide to different pH solutions were analyzed. The output drain current was linearly related to the pH solutions in the range of pH 4 to pH 12. It was confirmed that the titanium-oxide layer prepared by the PEO process could feasibly be used as a hydrogen-ion-sensing membrane for EGFET measurements.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.5
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• pp.34-39
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• 2022

The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining

• Bulletin of the Korean Chemical Society
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• v.17 no.4
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• pp.321-324
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• 1996

Sr1+xSm1-xFeO4-y solid solutions with a composition range 0.00 ≤x≤1.00 have been prepared at 1200 ℃ in air under normal atmospheric pressure. All the solutions exhibit the K2NiF4-type structure of tetragonal system. Mohr salt analysis shows that the mole ratio of Fe4+ ion to Fe3+ ion or the τ value increases with the x value. Nonstoichiometric chemical formulas have been formulated from the x, τ, and y values. Electrical conductivity was measured in the temperature range of 173-373 K under atmospheric air pressure. The conductivities of each sample are varied within the semiconductivity range. The conductivity at constant temperature increases steadily with x value and activation energies are varied from 0.14 to 0.32 eV. The conduction mechanism of the ferrite system may be proposed as a hopping model of conduction electrons between the mixed valence states. The Mossbauer spectrum for the composition of x=0.00 shows a six line pattern by which the existence of Fe3+(I.S.=0.32 mm/sec) can only be identified. The spectra for the compositions of x=0.50 and 1.00 presents broad single line patterns showing a mixed valence state.

• Korean Journal of Materials Research
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• v.22 no.5
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• pp.215-219
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• 2012

Red phosphors $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ were synthesized with different concentrations of $Eu^{3+}$ ions by using a solid-state reaction method. The crystal structure of the red phosphors was found to be a tetragonal system. X-ray diffraction (XRD) results showed the (112) main diffraction peak centered at $2{\theta}=28.71^{\circ}$, and the size of crystalline particles exhibited an overall decreasing tendency according to the concentration of $Eu^{3+}$ ions. The excitation spectra of all the phosphors were composed of a broad band centered at 275 nm in the range of 230-310 nm due to $O^{2-}{\rightarrow}W^{6+}$ and a narrow band having a peak at 307 nm caused by $O^{2-}{\rightarrow}Eu^{3+}$. Also, the excitation spectrum presents several strong lines in the range of 305-420 nm, which are assigned to the 4f-4f transitions of the $Eu^{3+}$ ion. In the case of the emission spectrum, all the phosphor powders, irrespective of $Eu^{3+}$ ion concentration, indicated an orange emission peak at 594 nm and a strong red emission spectrum centered at 615 nm, with two weak lines at 648 and 700 nm. The highest red emission intensity occurred at x = 0.10 mol of Eu3+ ion concentration with an asymmetry ratio of 12.5. Especially, the presence of $Eu^{3+}$ in the $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ shows very effective use of excitation energy in the range of 305-420 nm, and finally yields a strong emission of red light.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1165-1169
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• 2003

The Ta$_2$O$_{5}$ thin film was deposited on Si-(III) and glass substrate with the change of Ar:O$_2$ gas flow rate in the assist ion gun by the Dual ion-Beam Sputtering (DIBS). As the $O_2$ gas flow of the assist ion gun was decreased, the deposition rate of the thin films decreased. The refractive index was fixed (2.11, at 1550 nm) without regarding to $O_2$ gas flow of the range 3∼12 sccm in assist ion gun. The condition of Ar:O$_2$=3:12 was formatted stoichiometry composition of Ta$_2$O$_{5}$ and the ms roughness was small (0.183 nm).

• Analytical Science and Technology
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• v.8 no.1
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• pp.79-84
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• 1995

Ion-selective poly(vinyl chloride) membrane electrodes for the determination of the anticholinergic drug alverine in pure substances is described. Ion-pair complex of alverine with anionic counter ion acid red 97 is investigated as electroactive compound for the electrode membrane. On the optimal composition of membrane, its slope was 55.35mV/decade, relative standard deviation was 0.61 and lower limit of linear range was $1.0{\times}10^{-5}M$. The observed potentiometric selectivity coefficient was -2.625 toward methylephedrine and -2.216 toward histidine. We can got the stable potential at pH 7.0~4.0. Response time was 20~30 seconds for solutions${\leq}10^{-4}M$, about 10 seconds for solutions ${\geq}10^{-4}M$ of these compounds.

• Journal of the Korean Chemical Society
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• v.17 no.5
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• pp.363-370
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• 1973

The rate constants of the nucleophilic addition of n-propyl-mercaptan to $\alpha$-cyano-$\beta$-piperonylacrylic acid were determined at various pH and a rate equation which can be applied over wide pH range is obtained. The rate equation reveals that below pH 4.5 the reaction is initiated by the attack of n-propylmercaptan to $\alpha$-cyano-$\beta$-piperonylacrylic acid. At pH 4.5~6.5, however, n-propylmercaptan is added to $\alpha$-cyano-$\beta$-piperonylacrylate ion; at pH 7.04~9.5 the competitive reaction between n-propylmercaptan and n-propylmercaptide ion is anticipated to occur. Above pH 10 the addendum is n-propylmercaptide ion and the acceptor is $\alpha$-cyano-$\beta$-piperonylacrylate ion.