• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.4
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• pp.357-363
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• 2014

The electrolyte wetting phenomena in the electrode of lithium ion battery is studied numerically using a multiphase lattice Boltzmann method (LBM). When a porous electrode is compressed during roll-pressing process, the porosity and thickness of the compressed electrode are changed, which can affect its wettability. In this study, the change in electrolyte distribution and degree of saturation as a result of varying the compression ratio are investigated with two-dimensional LBM approach. We found that changes in the electrolyte transport path are caused by a reduction in through-plane pore size and result in a decrease in the wettability of the compressed electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.625-627
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• 2002

MgO thin films were deposited on glass and (100) Si substrates by an Arc Ion Plating (AIP) equipment using a magnesium metal target at various oxygen gas flow. In this work, we investigated the relationship between the structural properties and the discharge characteristics of MgO coating layers. X-ray diffraction and AFM have been used to study behaviors of the structure and surface morphology. The optical transmittance and the ion induced secondary electron emission coefficient of the MgO films have been also measured. The resistivity of the deposited MgO films was gradually increased from 0.17 G ohm/${\square}$ to 0.35 G ohm/${\square}$ with the oxygen gas flow. The growth rate of the MgO coating layer was decreased with increasing the oxygen gas flow, while the optical transmittance was improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.49-50
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• 2005

Nitrogen and phosphorus ions were implanted into ZnO thin film fabricated by pulsed laser deposition. ion implanted ZnO thin films were annealed from $700^{\circ}C$ to $1000^{\circ}C$ using rapid thermal annealing process. The electron concentration was changed form $10^{20}$ to $10^{18}/cm^3$. Effect of nitrogen and phosphorus in ZnO thin films was certified and the structural and optical properties of nitrogen and phosphorus doped ZnO thin films depending on concentration of nitrogen and phosphorus were investigated.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.428-432
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• 1999

As metallic surface has its unique lustrous appearance and optical reflectance in visible range of light, the metallization of plastic surface has been an essential drive toward weight reduction for fuel economy and decorations in transportation industry and has been put into practiced from wet chemical-electrochemial to dry vacuum process in view of an environmental effect. Electron-beam metallization was used in this work with an aim at improving the scratchproof surface hardness of plastic substrate with metallic finish character. Thin film of Al ($1000\AA$) and $SiO_2$($7000\AA$) were metallized on substrate of PC and PMMA and the films were evaluated by pencil test for surface hardness and by cross-cut tape test for adhesion. The ion beam treatment improved around twice as hard as non-treat surface. The ion beam is effect on its hardness and adhesion to surface hardened PC substrate.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.110-123
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• 2005

This paper proposes an intelligent method for the optimal load distribution of two cooperating robots(TCRs) using fuzzy logic. The proposed scheme requires the knowledge of the robots' dynamics, which in turn depend upon the characteristics of large flat panel displays(LFPDs) carried by the TCRs. However, the dynamic properties of the LFPD are not known exactly, so that the dynamics of the robots, and hence the required joint torque, must be calculated for nominal set of the LFPD characteristics. The force of the TCRs is an important factor in carrying the LFPD. It is divided into external force and internal force. In general , the effects of the internal force of the TCRs are not considered in performing the load distribution in terms of optimal time, but they are essential in optimal trajectory planning: if they are not taken into consideration, the optimal scheme is no longer fitting. To alleviate this deficiency, we present an algorithm for finding the internal-force factors for the TCRs in terms of optimal time. The effectiveness of the proposed system is demonstrated by computer simulations using two three-joint planner robot manipulators.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.194-198
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• 1996

Detailed expermental studies of theelectronic structure of the valence and conduction bands of the mixed conductor $\beta$-LiAlindicate that a quasi-gap opens at the Fermi level, and the conduction states are highlylocalized, as opposed to the theoretical band structure calculations that predict predominant metallic behavior. Evidence for complex lithium migration effects involving the surface of Lial , induced by particle (electron or ion) bombardment and mechanical treatment , has been obtained as a byproduct of these experiments.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1643-1645
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• 2001

플라즈마 잠김 이온주입 장치를 개조하여 플라즈마 잠김 이온주입 및 증착 장치를 제작하였다. 박막을 증착하기 위하여 마그네트론 스퍼터를 장착하였다. Si 시료에 TiN막을 형성하기 위하여 $PI^3$

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.196-196
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• 1997

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.204-208
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• 2002

We investigate the dependence of indium tin oxide (ITO) thin films on the mixing ratio of Ar:O$_2$ produced by an ion-gun and $O_2$ injected inside the divergence angle of the ion-beam to optimize their sheet resistance and transmittance. The substrate is placed outside the divergence angle, and the films are grown by ion mixing with ITO evaporated at room temperature. From the XRD measurement ITO films are found to be amorphous. ITO thin films show the highest transmittance of 85% at 3$\times$10$^{-5}$ Torr of 0$_2$ and Ae:O$_2$ ratio of 40:60, and the smallest sheet resistance of 132 $\Omega$/$\square$at 1$\times$10$^{-5}$ Torr of $O_2$ and As:O$_2$ ratio of 40:60.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.