• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.159-164
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• 2010

Surface roughness of deposited or etched film strongly depends on ion bombardment. Relationships between ion bombardment variables and surface roughness are too complicated to model analytically. To overcome this, an empirical neural network model was constructed and applied to a deposition process of silicon nitride (SiN) films. The films were deposited by using a pulsed plasma enhanced chemical vapor deposition system in $SiH_4$-$NH_4$ plasma. Radio frequency source power and duty ratio were varied in the range of 200-800 W and 40-100%. A total of 20 experiments were conducted. A non-invasive ion energy analyzer was used to collect ion energy distribution. The diagnostic variables examined include high (or) low ion energy and high (or low) ion energy flux. Mean surface roughness was measured by using atomic force microscopy. A neural network model relating the diagnostic variables to the surface roughness was constructed and its prediction performance was optimized by using a genetic algorithm. The optimized model yielded an improved performance of about 58% over statistical regression model. The model revealed very interesting features useful for optimization of surface roughness. This includes a reduction in surface roughness either by an increase in ion energy flux at lower ion energy or by an increase in higher ion energy at lower ion energy flux.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.357-365
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• 2014

A non-invasive method for ion energy distribution measurement at a RF biased surface is proposed for monitoring the property of ion bombardments in capacitively coupled plasma sources. To obtain the ion energy distribution, the measured electrode voltage is analyzed based on the circuit model which is developed with the linearized sheath capacitance on the assumption that the RF driven sheath behaves like a simple diode for a bias power whose frequency is much lower than the ion plasma frequency. The method is verified by comparing the ion energy distribution function obtained from the proposed model with the experimental result taken from the ion energy analyzer in a dual cathode capacitively coupled plasma source driven by a 100 MHz source power and a 400 kHz bias power.

• Journal of Photoscience
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• v.8 no.1
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• pp.33-37
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• 2001

Picosecond absorption spectroscopy has been employed in the study of the solvent dynamics of 1, 2, 4, 5-tetracyanobenzene/biphenyl derivative radical ion pairs, and the resulting rates of radical ion pair separation are faster in acetonitrile than in dichloromethane. In an effort to account quantitatively for such solvent effect on the rate of radical ion pair separation, an equation for the rate of radical ion pair separation is introduced, in which the rate depends exponentially on the electrostatic interaction energy in the radical ion pair. In our analysis of the types of electrostatic interaction energy based on the conducting spheres in dielectric continuum was chosen, and the rate equation employing this electrostatic energy provided information on the distance on the distance of radical ion pair separation and solvation energy of the radical ion pair, thereby providing quantitative explanation for the observed solvent effect on the rate of radical ion pair sepaaration.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.70-77
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• 2024

A low energy ion irradiation system based on the deuterium arc ion source with a high perveance of 1 µP for a single extraction aperture has been successfully developed for the investigation of ion irradiation on plasma-facing components including the first mirror of plasma optical diagnostics system. Under the optimum operating condition for mirror testing, the ion source has a beam energy of 200 eV and a current density of 3.7 mA/cm². The ion source comprises a magnetic cusp-type plasma source, an extraction system, a target system with a Faraday cup, and a power supply control system to ensure stable long time operation. Operation parameters of plasma source such as pressure, filament current, and arc power with D₂ discharge gas were optimized for beam extraction by measuring plasma parameters with a Langmuir probe. The diode electrode extraction system was designed by IGUN simulation to optimize for 1 µP perveance. It was successfully demonstrated that the ion beam current of ~4 mA can be extracted through the 10 mm aperture from the developed ion source. The target system with the Faraday cup is also developed to measure the beam current. With the assistance of the power control system, ion beams are extracted while maintaining a consistent arc power for more than 10 min of continuous operation.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.4
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• pp.229-234
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• 2005

Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.

• Ceramist
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• v.21 no.4
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• pp.312-330
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• 2018

Energy storage/conversion has become crucial not only to meet the present energy demand but also more importantly to sustain the modern society. Particularly, electrical energy storage is critical not only to support electronic, vehicular and load-levelling applications but also to efficiently commercialize renewable energy resources such as solar and wind. While Li-ion batteries are being intensely researched for electric vehicle applications, there is a pressing need to seek for new battery chemistries aimed at stationary storage systems. In this aspect, Zn-ion batteries offer a viable option to be utilized for high energy and power density applications since every intercalated Zn-ion yields a concurrent charge transfer of two electrons and thereby high theoretical capacities can be realized. Furthermore, the simplicity of fabrication under open-air conditions combined with the abundant and less toxic zinc element makes aqueous Zn-ion batteries one of the most economical, safe and green energy storage technologies with prospective use for stationary grid storage applications. Also, Zn-ion batteries are very safe for next-generation technologies based on flexible, roll-up, wearable implantable devices the portable electronics market. Following this advantages, a wide range of approaches and materials, namely, cathodes, anodes and electrolytes have been investigated for Zn-ion batteries applications to date. Herein, we review the progresses and major advancements related to aqueous. Zn-ion batteries, facilitating energy storage/conversion via $Zn^{2+}$ (de)intercalation mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.368-368
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• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.25-26
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• 2009

Pulsed-PECVD를 이용하여 상온에서 실리콘 나이트라이드(SiN) 박막을 증착하였다. 본 연구에서는, 60-100%의 duty ratio 변화에 따른 굴절률을 살펴보고, 굴절률에 대한 이온에너지의 영향을 분석했다. RF 소스파워는 900W로 고정하였고 $SiH_4-N_2$를 이용하였다. 이온에너지에 대한 정보는 non-invasive 이온 분석기를 이용하여 수집하였다. 측정된 이온에너지 변수는 high ion energy, low ion energy, high ion energy flux, low ion energy flux이며, 이를 이용해 또 다른 변수인 ion energy flux ratio를 계산하였다. Duty ratio의 감소에 따라 굴절률은 일반적으로 감소하였다. 또한 duty ratio의 감소에 따라 high ion energy는 증가하였다. 한편, 60-80%에서 굴절률은 이온에너지 flux의 비에 강한 의존성을 보였으며, 60%를 제외한 모든 duty ratio 구간에서 굴절률은 Nl에 강하게 영향을 알고 있는 것으로 유추되었다. 굴절률은 1.508와 1.714 사이에서 변화하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1246-1249
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• 1994

Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.