• 한국신재생에너지학회:학술대회논문집
• /
• 2005.06a
• /
• pp.306-309
• /
• 2005

One of the most critical issues in sol id oxide fuel cell (SOFC)running on hydrocarbon fuels is the risk of carbon formation from the fuel gas. The simple method to reduce the risk of carbon formation from the reactions is to add steam to the fuel stream, leading to the carbon gasification react ion. However, the addition of steam to fuel is not appropriate for the auxiliary power unit (APU) and potable power generation (PPG) systems due to an increase of complexity and bulkiness. In this regard, many researchers have focused on so-called 'direct methane' operation of SOFC, which works with dry methane without coking. However, coking can be suppressed only by the operation with a high current density, which may be a drawback especially for the APU and PPG systems. The single chamber fuel cell (SC-SOFC) is a novel simplification of the conventional SOFC into which a premixed fuel/air mixture is introduced. It relies on the selectivity of the anode and cathode catalysts to generate a chemical potential gradient across the cell. Moreover it allows compact and seal-free stack design. In this study, we fabricated honeycomb type mixed-gas fuel cell (MGFC) which has advantages of stacking to the axial direction and increasing volume power density. Honeycomb-structured SOFC with four channels was prepared by dry pressing method. Two alternative channels were coated with electrolyte and cathode slurry in order to make cathodic reaction sites. We will discuss that the anode supported honeycomb type cell running on mixed gas condition.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.134-134
• /
• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Korean Chemical Engineering Research
• /
• v.62 no.3
• /
• pp.246-252
• /
• 2024

In this study, impurities such as Li and F were removed from waste graphite through citric acid treatment, and changes in structural properties, capacity, and cycle stability of regenerated graphite were observed accordingly. Regenerated graphite pretreated in a nitrogen atmosphere was treated with citric acid, and its structure and characteristics were analyzed through SEM (Scanning Electron Microscope), FT-IR (Fourier Transform Infrared spectroscopy), XRD (X-ray Diffraction), and XPS (X-ray Photoelectron Spectroscopy). Waste graphite that was not treated with acid had a rapid decrease in capacity before 70 cycles, but graphite that had been treated with citric acid showed a capacity of 302.9 mAh g^-1 and a capacity retention rate of 93.1% at 100 cycles. In addition, despite changes in current density in rate performance, samples treated with citric acid showed 340.2 mAh g^-1 performance at 1.0C without change in capacity. As a result, it was confirmed that citric acid treatment not only effectively removed impurities and showed a high capacity retention rate, but also showed stability even at high current densities.

• Corrosion Science and Technology
• /
• v.14 no.2
• /
• pp.99-105
• /
• 2015

The structures of reinforced concrete have been extensively increased with rapid development of industrial society. Futhermore, these reinforced concretes are easy to expose to severe corrosive environments such as seawater, contaminated water, acid rain and seashore etc.. Thus, corrosion problem of steel bar embedded in concrete is very important in terms of safety and economical point of view. In this study, specimens having six different coating thickness (W/C:0.5) were prepared and immersed in flowing seawater for five years to evaluate the effect of coating thickness and immersion time on corrosion property. The polarization characteristics of these embedded steel bars were investigated using electrochemical methods such as corrosion potential, anodic polarization curve, and impedance. At the 20-day immersion, the corrosion potentials exhibited increasingly nobler values with coating thickness. However, after 5-yr. immersion their values were shifted in the negative direction, and the relationship between corrosion potential and coating thickness was not shown. Although 5-yr. immersion lowered corrosion potential, 5-yr. immersion did not increase corrosion rate. In addition, after 5-yr. immersion, the thinner cover thickness, corrosion current density was decreased with thinning coating thickness. It is due to the fact that ease incorporation of water, dissolved oxygen and chloride ion into a steel surface caused corrosion and hence, leaded to the formation of corrosion product. The corrosion product plays the role as a corrosion barrier and increases polarization resistance. The corrosion probability evaluated depending on corrosion potential may not be a good method for predicting corrosion probability. Hence, the parameters including cover thickness and passed aged years as well as corrosion potential is suggested to be considered for better assessment of corrosion probability of reinforced steel exposed to partially or fully in marine environment for long years.

• Polymer(Korea)
• /
• v.34 no.6
• /
• pp.540-546
• /
• 2010

In this manuscript, in order to reduce methanol permeability and, at the same time, to increase proton conductivity THS-PSA containing silica compound, responsible for methanol permeability reduction, and sulfonic acid, responsible for proton conductivity enhancement, was applied onto PVA/PSSA-MA membranes. And in order to improve durability, the resulting membranes, PVA/PSSAMA/THS-PSA, were exposed to 500ppm F2 gas at varying reaction times. The surface-fluorinated membranes were characterized through the measurement of contact angles, thermo-gravimetric analysis, and X-ray photoelectron spectroscopy to observe the physico-chemical changes. For the evaluation of the electro-chemical changes in the resulting membranes, its water contents, ion exchange capacity, proton conductivity, and methanol permeability were measured and then compared with the commercial membrane, Nafion 115. Finally, the membran electrode assembly(MEA) was prepared and the cell voltage against the current density was measured. As fluorination time increased, the contents of F2 increased up to maximum 4.3% and to depth of 50 nm. At 60 min of fluorination, the proton conductivity was 0.036 S/cm, larger than Nafion 115 at 0.024 S/cm, and the methanol permeability was $9.26E-08cm^2/s$, less than Nafion 115 at $1.17E-06cm^2/s$.

• Journal of the Korean Vacuum Society
• /
• v.16 no.6
• /
• pp.474-478
• /
• 2007

Nanostructures of $SiN_x$ were made by bombardment of ionized $N_2$ on Si surface and subsequent annealing. Atomic force micrograph showed the density of $SiN_x$ nanostructures was $3\times10^{10}/cm^2$. Their lateral size and height were 40$\sim$60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from $SiN_x$ to $Si_3N_4\;+\;SiN_x$ as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the $SiN_x$ nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding $SiN_x$ nanostructures.

• Applied Chemistry for Engineering
• /
• v.9 no.2
• /
• pp.220-225
• /
• 1998

The spinel structured $LiMn_2O_4$ was prepared from $Li_2CO_3$ and $MnO_2$ by calcination at various temperatures in the range of $750{\sim}900^{\circ}C$. It was found that the most suitable cubic structure of $LiMn_2O_4$ was obtained by heating at $850^{\circ}C$ for 12 hrs. However, in the calcination at $900^{\circ}C$, $Mn^{4+}$ of 0.06M was changed to $Mn^{+3}$ by the oxygen loss, so that it has been shown that the formula has changed to $LiMn_2O_{3.97}$. This phenomena were in agreement with the Jahn-Teller distortion by the increment of $Mn^{+3}$ ion on the octahedral sites of the spinel structured $LiMn_2O_4$. The results showed that after 15 charge/discharge cycles in the voltage range from 3.5V to 4.3V versus Li/$Li^+$ with a current density of $0.25mA/cm^2$, the spinel structured $LiMn_2O_4$ that was prepared at $900^{\circ}C$ showed a lower discharge capacity, 82~50 mAh/g, while the $LiMn_2O_4$, prepared at $850^{\circ}C$, showed the discharge capacity of 102~64 mAh/g.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1993.05a
• /
• pp.79-84
• /
• 1993

This paper describes the development of lithium rechargeable cell. $LiCoO_2$ is recently recognized as a suitable cathode active material of a high voltage, high energy lithium rechargeable batteries because $Li^+$ ion can be electrochemically deintercalated/intercalated from/to $Li_xCoO_2$. The transition metal oxide of $LiCoO_2$ was investigated for using as a cathode active material of 4V class Li rechargeable cell. $LiCoO_2$ cathode was prepared by using a active material of 85 wt%, graphite powder of 12 wt% as a conductor and poly-vinylidene fluoride of 3 wt% as a binder. The electrochemical and charge/discharge properties of $LiCoO_2$ were investigated by cyclic voltammetry and galvanostatic charge/discharge. The open circuit voltage of prepared $LiCoO_2$ electrode exhibited approximately. potential range between 3.32V and 3.42V. During the galvanostatic charge/discharge, $LiCoO_2/Li$ cell showed stable cycling behavior at scan rate of 1mV/sec and potential range between 3.6V and 4.2V. Also its coulombic efficiency as function of cycling was 81%~102%. In this study the $LiCoO_2/Li$ cell showed the available discharge capacity of 90.1 mAh/g at current density of $1mA/cm^2$ and cell discharge voltage range between 3.6V~4.2V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.145-145
• /
• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• The Journal of Korean Academy of Prosthodontics
• /
• v.44 no.5
• /
• pp.628-641
• /
• 2006

Statement of problem: Dental magnetic materials have been applied to removable prosthetic appliances, maxillofacial prostheses, obturator and dental implant but they still have some problems such as low corrosion resistance in oral environments. Purpose: To increase the corrosion resistance of dental magnetic materials, surfaces of Sm-Co and Nd-Fe-B based magnetic materials were plated with TiN and sealed with stainless steels. Materials and methods : Surfaces of Sm-Co and Nd-Fe-B based magnetic materials were plated with TiN and sealed with stainless steels, and then three kinds of electrochemical corrosion test were performed in 0.9% NaCl solution; potentiodynamic, potentiostatic, and electrochemical impedance test. From this study, corrosion behavior, amount of elements released, mean average surface roughness values, the changing of retention force, and magnetic force values were measured comparing with control group of non-coated magnetic materials. Results: The values of surface roughness of TiN coated Sm-Co and TiN coated Nd-Fe-B based magnetic materials were lower than those of non coated Sm-Co and Nd-Fe-B alloy. From results of potentiodynamic test, the passive current density of TiN coated Sm-Co alloy were smaller than those of TiN coated Nd-Fe-B alloy and non coated alloys in 0.9% NaCl solution. From results of potentiostatic and electrochemical impedance test, the surface stability of the TiN coated Sm-Co alloy was more drastically increased than that of the TiN coated Nd-Fe-B alloy and non-coated alloy. The retention and magnetic force after and before corrosion test did not change in the case of TiN coated magnetic alloy sealed with stainless steel. Conclusion: It is considered that the corrosion problem and improvement for surface stability of dental magnetic materials could be solved by ion plating with TiN on the surface of dental magnetic materials and by sealing with stainless steels.