• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.867-869
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• 1999

In this study, $SrBi_{2}Ta_{2}O_{9}$(SBT) thin films were etched as a function of $SF_6$/Ar gas mixing ratio in magnetically enhanced inductively coupled plasma(MEICP) system fer a fixed rf power, dc-bias voltage, and chamber pressure. The etch rate of SBT thin film was $1500{\AA}/min$ and the selectivities of photoresist (PR) and $SiO_2$ to SBT thin film were 0.48 and 0.62, respectively when the samples were etched at a rf power of 600W, a dc-bias voltage of -150V, a chamber pressure of 10 mTorr and a gas mixing ratio of $SF_6/(SF_6+A)$=0.1. In order to examine the chemical reactions on the etched surface, X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) were done.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.854-859
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• 2005

Performance of micro scale intermediate temperature solid oxide fuel cell system has been successfully evaluated by computer simulation based on macro modeling. Two systems were studied in this work. The one is designed that the ceria-based electrolyte placed between composite electrodes and the other is designed that electrodes alternately placed on the electrolyte. The injected gas was composed of hydrogen and air. The polarization curve was obtained through a series of calculations for ohmic loss, activation loss and concentration loss. The calculation of each loss was based on the solving of mathematical model of multi physical-phenomena such as ion conduction, fluid dynamics and diffusion and convection by Finite Element Method (FEM). The performance characteristics of SOFC were quantitatively investigated for various structural parameters such as distance between electrodes and thickness of electrolyte.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Journal of the Korea Safety Management & Science
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• v.17 no.3
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• pp.355-362
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• 2015

There has been an increase of using Bosch Process to fabricate MEMS Device, TSV, Power chip for straight etching profile. Essentially, the interest of TSV technology is rapidly floated, accordingly the demand of Bosch Process is able to hold the prominent position for straight etching of Si or another wafers. Recently, the process to prevent under etching or over etching using EPD equipment is widely used for improvement of mechanical, electrical properties of devices. As an EPD device, the OES is widely used to find accurate end point of etching. However, it is difficult to maintain the light source from view port of chamber because of contamination caused by ion conflict and byproducts in the chamber. In this study, we adapted the SPOES to avoid lose of signal and detect less open ratio under 1 %. We use 12inch Si wafer and execute the through etching 500um of thickness. Furthermore, to get the clear EPD data, we developed an algorithm to only receive the etching part without deposition part. The results showed possible to find End Point of under 1 % of open ratio etching process.

• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.781-789
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• 2022

KHNP had licensed Dynamic Control rod Reactivity Measurement (DCRM) method using detector current signals of PWRs in 2006. The method has been applied to all PWRs in Korea for about 15 years successfully. However, the original method was inapplicable to PWRs using low-sensitivity integral fission chamber as ex-core detectors because of their pulse pile-up and the nonlinearity of the mean-square voltage at low power region. Therefore, to overcome this disadvantage, a modified method, DCRM-EK, was developed using kinetics behavior after equilibrium condition where the pulse counts maintain the maximum value before pulse pile-up. Overall measurement, analysis procedure, and related computer codes were changed slightly to reflect the site test condition. The new method was applied to a total of 15 control rods of 1000 MWe and 1400 MWe PWRs in Korea with worths in the range of 200 pcm -1200 pcm. The results show the average difference of -0.4% and the maximum difference of 7.1% compared to the design values. Therefore, the new DCRM-EK will be applied to PWRs using low sensitivity integral fission chambers, and also can replace the original DCRM when the evaluation fails by big noises present in current or voltage signals of uncompensated/compensated ion chambers.

• Journal of Radiation Protection and Research
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• v.23 no.4
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• pp.267-271
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• 1998

It is required to measure air density correction factor at the time of absorbed dose calibration or measurement. In general, thermometer and barometer are widely used for air density correction. However, this can be done using the radioactive check device with better accuracy. The measurements of air density correction were performed by using the radioactive check device, Unidos electrometer, and 0.6 cc Farmer-type ion chamber of PTW under the different environmental conditions. Above experiments were repeated with thermometer and barometer. By comparing the two methods, they were within the difference of 0.2 %. The overall uncertainty for the dose found in thermometer and barometer was 1.2 - 1.6 %, depending upon either one step or two, whereas the overall uncertainty for the radioactive check device was 1.02 %. This method may reduce the possible error which could occur when thermometer and barometer are not calibrated at regular basis.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.05a
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• pp.27-30
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• 2022

The plasma process, which has many advantages in terms of efficiency and environment compared to conventional process methods, is widely used in semiconductor manufacturing. Plasma Sheath is a dark region observed between the plasma bulk and the chamber wall surrounding it or the electrode. The Plasma Sheath Monitoring Sensor (PSMS) measures the difference in voltage between the plasma and the electrode and the RF power applied to the electrode in real time. The PSMS data, therefore, are expected to have a high correlation with the state of plasma in the plasma chamber. In this study, a model for predicting the state of nitrogen ions in the plasma chamber is training by a deep learning machine learning techniques using PSMS data. For the data used in the study, PSMS data measured in an experiment with different power and pressure settings were used as training data, and the ratio, flux, and density of nitrogen ions measured in plasma bulk and Si substrate were used as labels. The results of this study are expected to be the basis of artificial intelligence technology for the optimization of plasma processes and real-time precise control in the future.

• Progress in Medical Physics
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• v.30 no.2
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• pp.59-63
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• 2019

Purpose: To manage radiation measurement equipment, a web-based management program has been developed in this study. Materials and Methods: This program is based on a web service and Java Server Pages (JSP) and employs compatibility and accessibility. Results: The first step in the workflow has been designed to create accounts for each user or organization and to log in. The program consists of two parts: fields for listed instruments, and measurement information. The instruments for measuring radiation listed in this program are as follows: ionization chambers, survey meters, thermometers, barometers, electrometers, and phantoms. Instrument properties can be put in the recording fields and browsing for associated instruments can be performed. The main part of the program is the cross-calibration for each ion chamber. For instance, the ionization chamber to be used as a relative dosimeter can be registered by cross-calibration data with a reference chamber calibrated by an accredited laboratory. This program supports methods using the central axis transfer theory for cross-calibration for the ionization chambers. The reference and field ionization chambers were placed in a solid water phantom along the beam central axis at two different depths, and then the positions were switched. Each measured value was used for calculating the cross-calibration factor. Conclusions: Because many instruments are used and managed in radiation oncology departments, systematic, traceable recording is very important. The web-based program developed in this study is expected to be used effectively in the maintenance of radiation measurement instruments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.361-365
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• 2003

Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.

• Journal of Radiation Protection and Research
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• v.28 no.1
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• pp.59-63
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• 2003

Purpose : Measurement of transmission dose is useful for in vivo dosimetry of QA purpose. The objective of this study is to develope an algorithm for estimation of tumor dose using measured transmission dose for open radiation field. Materials and Methods : Transmission dose was measured with various field size (FS), phantom thickness (Tp), and phantom chamber distance (PCD) with a acrylic phantom for 6 MV and 10 MV X-ray Source to chamber distance (SCD) was set to 150 cm. Measurement was conducted with a 0.6 cc Farmer type ion chamber. Using measured data and regression analysis, an algorithm was developed for estimation of expected reading of transmission dose. Accuracy of the algorithm was tested with flat solid phantom with various settings. Results : The algorithm consisted of quadratic function of log(A/P) (where A/P is area-perimeter ratio) and tertiary function of PCD. The algorithm could estimate dose with very high accuracy for open square field, with errors within ${\pm}0.5%$. For elongated radiation field, the errors were limited to ${\pm}1.0%$. Conclusion : The developed algorithm can accurately estimate the transmission dose in open radiation fields with various treatment settings.