• 전기전자학회논문지
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• 제22권1호
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• pp.149-155
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• 2018

본 논문에서는 전기영상법(ET)을 이용하여 수직 다층구조 대지저항률을 영상복원 하였다. 일반적으로 접지 시공을 위한 대지 분석은 수평 다층 구조라는 가정 하에 행해지지만, 현실적으로는 지하구조가 수직 구조일 경우도 발생하게 된다. 여기에서는 수직 다층구조의 대지분석에 유리한 전극배열법을 찾아내기 위하여 전기영상법에 가장 널리 사용되는 Wenner, Schlumberger 그리고 쌍극자배열을 테스트하였다. ET영상복원에는 Gauss-Newton 역산 알고리즘이 이용되었다. RMS 오차 분석결과를 보면 Wenner 배열의 경우가 RMS 오차가 가장 적게 나타나는 것을 확인할 수 있었다.

• 천문학회보
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• 제39권1호
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• pp.75.1-75.1
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• 2014

Sunspot penumbrae show supersonic downflow patches along the periphery. These patches are believed to be the return channels of the Evershed flow. There was previous study to investigate their structure in detail using Hinode SOT/SP observations (M. van Noort et al. 2013) but their data sample was only two sunspots. To make general description it needs to check more sunspot sample. We selected 242 downflow patches of 17 sunspots using Hinode SOT/SP observations from 2006 to 2012. Height-dependent maps of atmospheric parameters of these downflows was produced by using HeLix which was height dependent LTE inversion code of Stokes profiles. The inversion code at high resolution allows for the accurate determination of small scale structures. The recovered atmospheric structure of three layers indicates that regions with very high downflow velocities contain very strong magnetic fields reaching up to 7kG. The higher downflow velocity patches have bigger patch size. Magnetic fields of downflow patches are more vertical while penumbra shows horizontal field and neighbor of downflow patches have opposite polarity. Temperature of downflow patches at highest layer have more strong value than penumbra at deepest layer. The direction of velocity of downflow patches at highest layer have two branches. These result shows that we can expect some heating precess in the middle of layer.

• Current Optics and Photonics
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• 제2권2호
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• pp.119-124
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• 2018

The errors in retrieved aerosol backscattering coefficients due to different lidar ratios are analyzed quantitatively in this paper. The actual calculation shows that the inversion error of the aerosol backscattering coefficients using the Fernald backward-integration method increases with increasing inversion distance. The greater the error in the lidar ratio, the faster the error in the aerosol backscattering coefficient increases. For the same error in lidar ratio, the smaller actual aerosol backscattering coefficient will get the larger relative error of the retrieved aerosol backscattering coefficient. The errors in the lidar ratios for dust or the cirrus layer have great impact on the retrievals of backscattering coefficients. The interval between the retrieved height and the reference range is one of the important factors for the derived error in the aerosol backscattering coefficient, which is revealed quantitatively for the first time in this paper. The conclusions of this article can provide a basis for error estimation in retrieved backscattering coefficients of background aerosols, dust and cirrus layer. The errors in the lidar ratio of an aerosol layer influence the retrievals of backscattering coefficients for the aerosol layer below it.

• Advances in nano research
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• 제3권1호
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• pp.49-54
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• 2015

The structure represents symmetrical metal electrode (gate 1) - front $SiO_2$ layer - n-Si nanowire FET - buried $SiO_2$ layer - metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 - front $SiO_2$ and gate 2 - buried $SiO_2$ interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ${\sim}{\mu}F/cm^2$. The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.

• 한국항공운항학회지
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• 제14권4호
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• pp.94-100
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• 2006

The purpose of this case study is to determine the possibility of Numerical Forecasting of sea fog at West Sea in spring time. For practical method of analyzing the data collected from 24th to 26th March 2003, Numerical Weather Prediction model MM5(Mesoscale Model Version 5) and synoptic field study using synoptic chart, upper level chart, and sea surface temperature were employed. The results of synoptic field analysis summarized that sea fog at West sea in spring is intensified by the inflow of the warm flow from west or southwest, low sea surface temperature to increase the temperature difference between air and sea surface, and inversion layer to disturb the disperse. It appears that the possibility of sea fog forecasting by MM5, in view of the result that the MM5 output is similar to the synoptic fields analysis.

• 천문학회보
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• 제46권2호
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• pp.77.3-78
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• 2021

Measuring radiative loss from the solar chromospheric lines like Ha line, Ca II 8542 line helps to infer the exact amount of non-thermal heating in the solar atmosphere. By courtesy of the multi-layer spectral inversion, it is able to determine the radiative loss in the upper and lower chromosphere. Consequently, we found that the radiative loss is around 10 kW/m², which is consistent with previous studies. Comparing the radiative loss at the upper and lower chromosphere, the loss at the lower chromosphere is larger than that of upper chromosphere and tends to spread all over the field of view while the loss in the upper chromosphere tends to be localized. We hope to find a hint for specific non-thermal heating process to explain the chromospheric radiative loss.

• 대한전자공학회논문지SD
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• 제45권11호
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• pp.1-7
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• 2008

본 연구에서는 양자 현상을 고려한 나노미터 MuGFET의 C-V 특성을 분석하기 위하여 2차원 Poisson-$Schr{\ddot{o}}dinger$ 방정식을 self-consisnt하게 풀 수 있는 시뮬레이터를 구현하였다. 소자 시뮬레이터를 이용하여 양자 현상으로 인한 소자크기와 게이트 구조에 따른 게이트-채널 커패시턴스 특성을 분석하였다. 소자의 크기가 감소할수록 단위 면적당 게이트-채널 커패시턴스는 증가하였다. 그리고 게이트 구조가 다른 소자에서는 게이트-채널 커패시턴스가 유효게이트 수가 증가할수록 감소하였다. 이런 결과를 실리콘 표면의 전자농도 분포와 인버전 커패시턴스로 설명하였다 또한 인버전 커패시턴스로부터 소자의 크기 및 게이트 구조에 따른 inversion-layer centroid 길이도 계산하였다.

• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2008년도 공동학술대회
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• pp.47-50
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• 2008

방조제에 의해 조성된 담수호 바닥 퇴적물의 특성 파악을 위하여, 스트리머 케이블을 이용한 수상 쌍극자배열 전기비저항탐사를 수행하였다. 담수호에서 얻어진 전기비저항 탐사 자료는 전극전개수가 작은 경우에는 낮은 겉보기 비저항 값을 보이며, 전극전개수가 증가함에 따라 증가하는 양상을 보인다. 따라서 고정된 전류전극에 대하여 전극 전개수가 증가할 경우 겉보기 비저항값이 크게 감소하는 자료는 역산자료에서 제외하는 기법을 적용하는 것이 필수적인데, 하부층에 대한 상부층의 비저항이 0.6$\sim$0.8 사이의 값을 적용하는 경우 역산 결과가 양호한 것으로 나타났다. 또한 바닥 퇴적물을 2층과 3층으로 설정한 후 역산 결과 담수호 물의 비저항을 고려한 역산 결과가 하부 퇴적물의 비저항 분포를 파악하는데 효과적인 것으로 나타났다.

• 한국염색가공학회지
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• 제15권2호
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• pp.68-75
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• 2003

In this work, ultrafiltration(UF) membranes were prepared using polyethersulfone(PES). The polymer was dissolved in various solvent, such as N, N-dimethyl formamide(DMF), N,-dimethyl acetamide (DMAc), N,N-dimethyl sulfoxide(DMSO) and N-methyl-2- pynolidone(NMP). Each polymer solution was casted on the glass plate, and immersed into non-solvent bath. In this way finely porous UF membranes were prepared by phase inversion method. The cross sectional structure of PES membrane was asymmetric which was consist of sponge-like sublayer, finger-like toplayer, and active skin layer. From the solute rejection experiments, the molecular weight cut off of the prepared membrane in various solvent was evaluated 10,000 for DMF, 30,000 for DMAc, 50,000 for DMSO, and 10,000 for NMP respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.100-106
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• 2010

The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.