• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.314.2-314.2
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• 2014

To improve the optical and electrical properties of commercialized GaN-based light-emitting diodes (LEDs), many methods are suggested. In recent years, great efforts have been made to improve the internal quantum efficiency and light extraction efficiency (LEE) and promising approaches are suggested using a patterned sapphire substrate (PSS), V-pit embedded LED structures, and silica nanostructures. In this study, we report on the enhancement of photoluminescence (PL) intensity in GaN-based LED structures by using the combination of SiO2 (silica) nanospheres and polystyrene/SiO2 core-shell nanospheres. The SiO2 nanospheres-coated LED structure shows the slightly increased PL intensity. Moreover the polystyrene/SiO2 core-shell nanospheres-coated structure shows the more increase of PL intensity comparing to that of only SiO2 spheres-coated structure and the conventional structure without coating of nanospheres. The Finite-difference time-domain (FDTD) simulation results show corresponding result with experimentally observed results. The mechanism of enhancement of PL intensity using the coating of polystyrene/SiO2 core-shell nanospheres on LED surface can be explained by the improvement in extraction efficiency by both increasing the probability of light escape by reducing Fresnel reflection and by multiple scattering within the core-shell nanospheres.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.437-439
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• 2000

The internal quantum efficiency of EL devices using fluorescent organic materials is limited within 25% because of the triplet excitons which can hardly emit light. So there has been considerable interest in finding ways to obtain light emission from triplet excitons. One approach has been to add phosphorescent compounds to one of the layers in an EL device. Then triplet excitons can transfer to these phosphorescent molecules and emit light. In this study, multilayer organic light-emitting devices with phosphorescent emitter, tris (2-phenylpyridine)iridium ($Ir(ppy)_3$) were prepared. The device exhibited power luminous efficiency of 1.07 1m/W at the luminance of $61.6\;cd/m^2$ diriven at the voltage of 9 V and current density of $1.9mA/cm^2$. At the luminance of $100\;cd/m^2$, the luminous efficiency was obtained 1.05 lm/W with the voltage of 9.5 V and the corrent density of $2.8\;mA/cm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.10-16
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• 2011

We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.214-217
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• 2002

The internal quantum efficiency of organic light emitting devices(OLEDs) using fluorescent organic materials is limited within 25% because of the triplet excitons which can hardly emit light. So there has been considerable interest in finding ways to obtain light emission from triplet excitons. One approach has been to add phosphorescent compounds to one of the layers in OLEDs. Then triplet excitons can transfer to these phosphorescent molecules and emit light. In this study, multilayer OLEDs with phosphorescent emitter, Iridium complexes were prepared. The devices with a structure of ITO/TPD/Ir complex doped in the host material/Alq3/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. Using various Ir complexes and the host materials, we fabricated several devices and investigated the device characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1297-1299
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• 2009

A series of $Eu^{2+}/Mn^{2+}$ co-activated $Ba_{1.98-x}Sr_xZnS_3$ red emission phosphors was synthesized using the polymerizable complex method. The excitation spectra of the materials contain two wide bands centered at 345nm and 445nm, implicating their possible use for white LED lighting applications. In addition, substitution of Sr for Ba by 20% (x=0.4) improved drastically the emission intensity as well as the internal quantum efficiency compared to those for Sr-free $Ba_2ZnS_3:Eu^{2+}/Mn^{2+}$ phosphor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.18-21
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• 2013

$SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

• The Korean Journal of Food & Health Convergence
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• v.4 no.3
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• pp.1-5
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• 2018

In today's technological development of human society more and more influence on the lives of biological organisms different electromagnetic radiation. Therefore, the study and analysis of the mechanisms of their effects is an urgent task. The purpose of research - the study of the primary mechanisms of interaction of photons of optical radiation with the structures of biological objects, using the laws of quantum mechanics and biophysics. Photobiological basis of the mechanism of action of EMR optical range is the energy absorption of light quanta (photons) by atoms and molecules of biological structures (law Grotgus-Draper), which resulted in the formation of electronically excited states of these molecules with the transfer of photon energy (internal photoeffect). This is accompanied by electrolytic dissociation and ionization of biological molecules. The degree of manifestation of photobiological effects in the body depends on the intensity of the optical radiation, which is inversely proportional to the square of the distance from the source to the irradiated surface. Accordingly, in practice, determine not the intensity and irradiation dose at a certain distance from the source of exposure by the exposure time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.307-311
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• 2014

Because of a waveguiding effect and total internal reflection caused by a difference in refractive indices, only 20% of generated light is emitted to the air and the rest is trapped or absorbed in the device. An improvement of outcoupled efficiency of organic light-emitting diodes was studied using a microlens array. Mold of microlens array was fabricated by using photo-lithography with the AZ9260 photoresist, and the microlens array was formed onto the glass substrate using the UV curing agent named ZPU13-440. Device structure consists of microlens/glass/ITO/TPD/$Alq_3$/LiF/Al. It was found that there is an improvement of external quantum efficiency by about 20% at the same current density for the device with the microlens array compared to that of the reference one. Simulated outcoupled efficiency shows the improvement by about 20% for the device with the microlens array compared to that of the reference one. These results are consistent with the experimental ones.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.