• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.664-674
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• 2016

The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

• 한국세라믹학회지
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• 제36권2호
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• pp.151-158
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• 1999

유기단분자인 $\varepsilon$-Caprolactame을 montmorillonite의 층사이에 삽입하여 증합반응시켜 고분자화해 줌으로써 무기고분자와 유기고분자를 화학결합에 의해 연결시켜 주었다. X-선 및 IR-분석결과 층내에서의 $\varepsilon$-Caprolactame의 고분자반응이 성공적으로 이루어졌음이 입증되었다. 고분자 반응생성물을 좀 더 자세히 분석조사하기 위해 고분자 물질을 층사이로부터 격리시켜 X-선회절분석 및 IR 분석한 결과와 montmorillonite없이 $\varepsilon$-Caprolactame만 고분자화시켜 얻은 순수고분자에 대한 동일한 분석 결과를 비교해 본 결과 서로 동일한 화합물임이 입증되었다.

• Structural Engineering and Mechanics
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• 제58권4호
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• pp.613-625
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• 2016

Contact interaction of a beam (flexible element) with an elastic half-plane is considered, when a soft inhomogeneous (functionally graded) interlayer is present between them. The beam is bent under the action of a distributed load applied to the surface and a reaction of the elastic interlayer and the half-space. Solution of the contact problem is obtained for different values of thickness and parameters of inhomogeneity of the layer. The interlayer is assumed to be significantly softer than the underlying half-plane; case of 100 times difference in Young's moduli is considered as an example. The influence of the interlayer thickness and gradient of elastic properties on the distribution of the contact stresses under the beam is studied.

• 한국세라믹학회지
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• 제22권4호
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• pp.3-8
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• 1985

The layer charge densities and interlayer C. E. C(cation exchange capacity) of ten mica-type aluminosilicates from Yong-il Pohang-prefacture were determined by n-alkylammonium method which is based on the mo-nolayer-doubelelayer structural transition of ni-alkylammonium ion in interlayer space of the layered silcates. The upper and lower limits of layer charge and interlyer C, E, C estimated were about 0.25~0.36 eq/(Si, $Al)_4$ O10 and 69~99meq/100g, respectively.

• 터널과지하공간
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• 제22권3호
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• pp.221-225
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• 2012

마그네슘 합금은 경량화 재료로서 많은 주목을 받고 있으나, 스테인레스 스틸과의 접합이 어려운 문제점이 있다. 본 연구에서는 수중충격파를 이용하여 스테인레스 스틸(SUS304)과 마그네슘 합금(AZ31)의 폭발용접을 수행하고 접합특성에 관한 분석을 수행하였다. SUS304의 두께는 0.5 mm와 1 mm를 사용하였으며, 폭약과 재료의 이격거리는 45 mm, 폭약의 설치경사는 $20^{\circ}$로 하여 실험한 결과, 두 재료의 접합면에서 중간층(resolidified interlayer)이 형성되었다. 중간층의 형성을 억제하기 위하여 폭약과 재료의 거리를 60 mm로 증가시켰으며 폭약의 경사는 $30^{\circ}$으로 변경하여 폭발용접실험을 수행하였다. 그 결과, 폭약과 재료 사이의 간격과 경사각이 증가함에 따라 중간층이 나타나지 않는 경향을 보였다. 이 중간층에 대하여 EPMA분석한 결과, 중간층은 두 금속의 재료가 혼합되어 있는 것으로 확인 되었으며, 경도는 두 금속의 평균 경도에 해당 됨이 확인 되었다.

• 한국광물학회지
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• 제10권2호
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• pp.82-96
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• 1997

Buserties are known to have layer structures with variable C dimension which depended on the nature interlayer catious and contents of water molecular between edge-sharing [MnO6] octabedral layers. Na-, Ca-, Mg-, and Zn-buserties were synthesized in the laboratory and studied for to know the structural states of water molecules and the role of catious in the buserite structures. With lowering the relative humidity(RH), Ca-buserite begins to dehydrate at 27% RH and proceeds further very slowly. Mg- and Zn- buserite also slow dehydration above 2% RH. With gradual ineveasing temperature Ca- and Zn-buserite show abrupt shifting of 10$\AA$ peak (10$\AA$-phare) toward 7$\AA$ peak. All of 7$\AA$-phare are further dehydrated to 5$\AA$-phare by further increasing temperature. It suggests that interlayer catious play a crucial role in the dehydration behavious of buserites. Simulation of one-dimensional X-ray diffraction patterns of buserties show that buserites have three layers of water molecules of different types: the very loosely bound and tightly bend waters, instead of two layers that was regarded by previous authers. The very loosely bound water is sited I open space of the interlayer, the loosely bound water is bound on the tightly bound water by hydrogen bond, and the tightly bond water in coodinately bound on the interlayer catious.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.6-10
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• 2018

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

• 대한화학회지
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• 제53권1호
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• pp.42-50
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• 2009

유전율-분광법과 교류 전도도 측정 연구를 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에 시도하였다. 373-723K 온도와 100Hz-1MHz 주파수 영역에서 loss 탄젠트 (Tan$\delta$), 상대적 유전율 ($\varepsilon_{r}$) 그리고 교류 전도 도 ($\sigma_{ac}$)의 의존성을 혼입 유도체들에 대하여 조사하였다. 다양한 전도도 메커니즘이 존재하는데 MSLT-1과 MSLT-2의 경우에는 낮은 온도영역에서 전자에 의한 전도도를 보인다. MSLT-3의 경우에는 금지된 층간 이온 전 도도가 전자 전도도와 함께 존재한다. 이러한 층간 이온 전도도는 모든 혼입 유도체들에 대하여 중간 온도 영역에 존재한다. 가장 높은 온도 영역에서는 MSLT-1과 MSLT-2의 경우에는 이온 전도도와 polaron에 의한 전도도가 존재하고 MSLT-3에 대하여는 이온 전도도 만이 존재한다. 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에서 Loss 탄젠트 (Tan$\delta$)는 전자 전도도와 쌍극자의 위치, 그리고 공간 전하 분극화에 기인한다. 상대적 유전율의 증가는 층간 에 쌍극자 수의 증가에 기인하고 반면 상대적 유전율의 감소는 높은 혼입율에 따른 누전 전류의 증가에 기인한다.

• 한국세라믹학회지
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• 제53권4호
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• pp.417-428
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• 2016

In this review, an attempt is made to calculate one-dimensional (1-D) electron density profiles from experimentally determined (00l) XRD intensities and possible structural models as well in an effort to understand the collective intracrystalline structures of intercalant molecules of two-dimensional (2-D) nanohybrids with heterostructures. 2-D ceramics, including layered metal oxides and clays, have received much attention due to their potential applicability as catalysts, electrodes, stabilizing agents, and drug delivery systems. 2-D nanohybrids based on such layered ceramics with various heterostructures have been realized through intercalation reactions. In general, the physico-chemical properties of such 2-D nanohybrids are strongly correlated with their heterostructures, but it is not easy to solve the crystal structures due to their low crystallinity and high anisotropic nature. However, the powder X-ray diffraction (XRD) analysis method is thought to be the most powerful means of understanding the interlayer structures of intercalant molecules. If a proper number of well-developed (00l) XRD peaks are available for such 2-D nanohybrids, the 1-D electron density along the crystallographic c-axis can be calculated via a Fourier transform analysis to obtain structural information about the orientations and arrangements of guest species in the interlayer space.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.