• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.664-674
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• 2016

The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.151-158
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• 1999

$\varepsilon$-Caprolactame as organic monomer was intercalated in the interlayer space of montmorillonite and polymerized by polymerization reaction so that the inorganic polymer and organic polymer could be combined each other by chemical bonding. The results of X-ray and IR analysis showed that the polymerization reaction of $\varepsilon$-caprolactame between the interlayer spaces has been performed sucessfully. In order to study polymeric reaction product in detail we have isolated the polymerized material from the interlayer space and analyzed it by X-ray diffractometer and IR-Spectrocopy. The comparison of these results with them of the analyses for thee pure polymer which has been synthesized by polymeric reaction of $\varepsilon$-carolactame without montmorillonite showed that the obtained both polymeric materials are the same compounds.

• Structural Engineering and Mechanics
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• v.58 no.4
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• pp.613-625
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• 2016

Contact interaction of a beam (flexible element) with an elastic half-plane is considered, when a soft inhomogeneous (functionally graded) interlayer is present between them. The beam is bent under the action of a distributed load applied to the surface and a reaction of the elastic interlayer and the half-space. Solution of the contact problem is obtained for different values of thickness and parameters of inhomogeneity of the layer. The interlayer is assumed to be significantly softer than the underlying half-plane; case of 100 times difference in Young's moduli is considered as an example. The influence of the interlayer thickness and gradient of elastic properties on the distribution of the contact stresses under the beam is studied.

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.3-8
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• 1985

The layer charge densities and interlayer C. E. C(cation exchange capacity) of ten mica-type aluminosilicates from Yong-il Pohang-prefacture were determined by n-alkylammonium method which is based on the mo-nolayer-doubelelayer structural transition of ni-alkylammonium ion in interlayer space of the layered silcates. The upper and lower limits of layer charge and interlyer C, E, C estimated were about 0.25~0.36 eq/(Si, $Al)_4$ O10 and 69~99meq/100g, respectively.

• Tunnel and Underground Space
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• v.22 no.3
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• pp.221-225
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• 2012

Magnesium is one of the light weight materials, which can improve fuel economy and reduce emissions in automotive industry. Recently, magnesium alloys have gained considerable attention due to good mechanical properties. In this work, we have performed an explosive welding using the magnesium alloys (AZ31) and stainless steel (SUS 304). As a result, SUS304/AZ31 were successfully combined each other; however, a resolidified interlayer was observed at the point of welded layer. To reduce the resolidified interlayer, we have changed the thickness (0.5 mm and 1 mm) of stainless steel, distance (45 mm and 60 mm) between explosive and the center of materials and initial angle ($20^{\circ}$ and $30^{\circ}$) of explosive. In the case of the thickness 0.5 mm and angle of $30^{\circ}$, the resolidfied interlayer was not observed due to the increase of distance from the explosive. To accurately estimate the resolidified interlayer, electron probe micro-analyzer (EPMA) method and hardness were used. For the EPMA analysis, mixed materials were confirmed at the resolidified interlayer, and the measurement exhibited the middle value compared with the AZ31 and SUS304.

• Journal of the Mineralogical Society of Korea
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• v.10 no.2
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• pp.82-96
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• 1997

Buserties are known to have layer structures with variable C dimension which depended on the nature interlayer catious and contents of water molecular between edge-sharing [MnO6] octabedral layers. Na-, Ca-, Mg-, and Zn-buserties were synthesized in the laboratory and studied for to know the structural states of water molecules and the role of catious in the buserite structures. With lowering the relative humidity(RH), Ca-buserite begins to dehydrate at 27% RH and proceeds further very slowly. Mg- and Zn- buserite also slow dehydration above 2% RH. With gradual ineveasing temperature Ca- and Zn-buserite show abrupt shifting of 10$\AA$ peak (10$\AA$-phare) toward 7$\AA$ peak. All of 7$\AA$-phare are further dehydrated to 5$\AA$-phare by further increasing temperature. It suggests that interlayer catious play a crucial role in the dehydration behavious of buserites. Simulation of one-dimensional X-ray diffraction patterns of buserties show that buserites have three layers of water molecules of different types: the very loosely bound and tightly bend waters, instead of two layers that was regarded by previous authers. The very loosely bound water is sited I open space of the interlayer, the loosely bound water is bound on the tightly bound water by hydrogen bond, and the tightly bond water in coodinately bound on the interlayer catious.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.6-10
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• 2018

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

• Journal of the Korean Chemical Society
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• v.53 no.1
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• pp.42-50
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• 2009

The dielectric-spectroscopic and ac conductivity studies firstly carried out on layered manganese doped Sodium Lithium Trititanates ($Na_{1.9}Li_{0.1}Ti_3O_7$). The dependence of loss tangent (Tan$\delta$), relative permittivity ($\varepsilon_r$) and ac conductivity ($\sigma_{ac}$) in temperature range 373-723K and frequency range 100Hz-1MHz studied on doped derivatives. Various conduction mechanisms are involved during temperature range of study like electronic hopping conduction in lowest temperature region, for MSLT-1 and MSLT-2. The hindered interlayer ionic conduction exists with electronic hopping conduction for MSLT-3. The associated interlayer ionic conduction exists in mid temperature region for all doped derivatives. In highest temperature region modified interlayer ionic conduction along with the polaronic conduction, exist for MSLT-1, MSLT-2, and only modified interlayer ionic conduction for MSLT-3. The loss tangent (Tan$\delta$) in manganese-doped derivatives of layered $Na_{1.9}Li_{0.1}Ti_3O_7$ ceramic may be due to contribution of electric conduction, dipole orientation, and space charge polarization. The corresponding increase in the values of relative permittivity may be due to increase in number of dipoles in the interlayer space while the corresponding decrease in the values of relative permittivity may be due to the increase in the leakage current due to the higher doping.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.417-428
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• 2016

In this review, an attempt is made to calculate one-dimensional (1-D) electron density profiles from experimentally determined (00l) XRD intensities and possible structural models as well in an effort to understand the collective intracrystalline structures of intercalant molecules of two-dimensional (2-D) nanohybrids with heterostructures. 2-D ceramics, including layered metal oxides and clays, have received much attention due to their potential applicability as catalysts, electrodes, stabilizing agents, and drug delivery systems. 2-D nanohybrids based on such layered ceramics with various heterostructures have been realized through intercalation reactions. In general, the physico-chemical properties of such 2-D nanohybrids are strongly correlated with their heterostructures, but it is not easy to solve the crystal structures due to their low crystallinity and high anisotropic nature. However, the powder X-ray diffraction (XRD) analysis method is thought to be the most powerful means of understanding the interlayer structures of intercalant molecules. If a proper number of well-developed (00l) XRD peaks are available for such 2-D nanohybrids, the 1-D electron density along the crystallographic c-axis can be calculated via a Fourier transform analysis to obtain structural information about the orientations and arrangements of guest species in the interlayer space.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.