• Korean Journal of Optics and Photonics
• /
• v.13 no.3
• /
• pp.228-234
• /
• 2002

We report theoretical investigation on the polarization selective coupling characteristics of a side-polished fiber directional coupler with a thin metal interlayer. Based on normal mode theory the coupling properties of the device under various structural conditions are analyzed. It is shown that the coupling strength between TE modes weakens rapidly with increase or metal interlayer thickness, whereas that between TM modes becomes stronger. The design conditions of the polarization splitter using the coupler to achieve high extinction ratio and low insertion loss are presented.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 1998.11a
• /
• pp.27-28
• /
• 1998

• Journal of the Korean Vacuum Society
• /
• v.16 no.6
• /
• pp.446-452
• /
• 2007

[ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.

• Korean Journal of Materials Research
• /
• v.13 no.2
• /
• pp.88-93
• /
• 2003

Co/Ti bilayer structure in Co salicide process helps to the improvement of device speed by lowering contact resistance due to the epitaxial growth of $CoSi_2$layers. We investigated the epitaxial growth and interfacial mass transport of $CoSi_2$layers formed from $150 \AA$-Co/Ti structure with two step rapid thermal annealing (RTA). The thicknesses of Ti layers were varied from 20 $\AA$ to 100 $\AA$. After we confirmed the appropriate deposition of Ti film even below $100\AA$-thick, we investigated the cross sectional microstructure, surface roughness, eptiaxial growth, and mass transportation of$ CoSi_2$films formed from various Ti thickness with a cross sectional transmission electron microscopy XTEM), scanning probe microscopy (SPM), X-ray diffractometery (XRD), and Auger electron depth profiling, respectively. We found that all Ti interlayer led to$ CoSi_2$epitaxial growth, while $20 \AA$-thick Ti caused imperfect epitaxy. Ti interlayer also caused Co-Ti-Si compounds on top of $CoSi_2$, which were very hard to remove selectively. Our result implied that we need to employ appropriate Ti thickness to enhance the epitaxial growth as well as to lessen Co-Ti-Si compound formation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.7
• /
• pp.475-480
• /
• 2018

We investigated the tribological properties of amorphous carbon (a-C) films deposited with CrC interlayers of various thicknesses as the adhesive layer. A-C and CrC thin films were deposited using the unbalanced magnetron (UBM) sputtering method with graphite and chromium as the targets. CrC films as the interlayer were fabricated under a-C films, and various structural, surface, and tribological properties of a-C films deposited with various CrC interlayer thicknesses were investigated. With various CrC interlayer thicknesses under a-C films, the tribological properties of CrC/a-C films were improved; the increased film thickness exhibited a maximum high hardness of over 27.5 GPa, high elastic modulus of over 242 GPa, critical load of 31 N, residual stress of 1.85 GPa, and a smooth surface below 0.09 nm at the condition of 30-nm CrC thickness.

• Journal of the Korean Ceramic Society
• /
• v.39 no.8
• /
• pp.742-749
• /
• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.397-397
• /
• 2007

Diamondlike carbon (DLC) coatings were deposited on alumina ceramic seals using a plasma immersion ion deposition technique (PIID). Then they were subjected to tribological tests using a pin-on-disc tribometer under a high load (1.3 GPa) and under elevated temperatures up to 400C. Coefficients of friction (COFs) were recorded and compared with that of the untreated alumina while the wear tracks were analyzed using SEM with EDS to characterize the DLC films. To enhance the DLC adhesion to the substrate, various interlayers including Si and Cr were deposited using the PIID process or an ion beam assisted deposition (IBAD) method. It was observed that the DLC coating, if adhering well to the substrate, reduced the COFs significantly, from 0.4-0.8 for the uncoated alumina to about 0.05-0.1, within the tested temperature range. The adhesion was determined by the interlayer type and possibly by the application method. Cr interlayer did not perform as well as the Si interlayer. This could also be due to the fact that the Cr interlayer and the subsequent DLC coating had to be done in two different processing systems, while both the Si interlayer and the subsequent DLC film were deposited in one system without breaking the chamber. The coating failure mode was found to be delamination between the Cr and the alumina substrate. In contrast, the Si interlayer with proper DLC deposition procedures resulted in very good adhesion and hence excellent tribological performance. Further study may lead to future DLC applications of ceramic seals.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.2
• /
• pp.75-80
• /
• 2014

Nanocrystalline diamond(NCD) films on steel(SKH51) has been investigated using SiC interlayer film. SiC was deposited on SKH51 or Si wafer by RF magnetron sputter. NCD was deposited on SiC at $600^{\circ}C$ for 0.5~4 h employing microwave plasma CVD. Film morphology was observed by FESEM and FIB. Film adherence was examined by Rockwell C adhesion test. The growth rate of NCD on SiC/Si substrate was much higher than that on SiC/SKH51. During particle coalescence, NCD growth rate was slow since overall rate was determined by the diffusion of carbon on SiC surface. After completion of particle coalescence, NCD growth became faster with the reaction of carbon on NCD film controlling the whole process. In the case of SiC/SKH51 substrate, a complete NCD film was not formed even after 4 h of deposition. The adhesion test of NCD/SiC/SKH51 samples revealed a delamination of film whereas that of SiC/SKH51 showed a good adhesion. Many voids of less than 0.1 ${\mu}m$ were detected on NCD/SiC interface. These voids were believed as the reason for the poor adhesion between NCD and SiC films. The origin of voids was due to the insufficient coalescence of diamond particles on SiC surface in the early stage of deposition.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.6
• /
• pp.303-310
• /
• 2014

In this study, the average in-situ stress in metallic thin film was measured during deposition of the Cu thin films on the Si(111) wafer and then the phenomenon of stress shift by the interruption of deposition was measured using Cu thin films. We have observed the stress shift in accordance with changing amount of atom's movement between the surface and grain boundary through altering the grain size of the Cu thin film with variety of parameters. The grain size is known to be affected on the deposition rate, film thickness and deposition temperature. As a experimental results, the these parameters was not adequate to explain stress shift because these parameters affect directly on the amount of atom's movement between the surface and grain boundary as well as the grain size. Thus, we have observed the stress shift toward tensile side in accordance with the grain size changing through the interlayer deposition. From an experiment with inserting interlayer before deposit Cu, in thin film which has big grain size with high roughness, amount of stress movement is higher along direction of tensile stress after deposition that means, after deposition process, driving force of atoms moving in grain boundary and on the surface of the film is relatively higher than before.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.2
• /
• pp.194-198
• /
• 2022

All-solid-state thin-film battery can realize the integration of electronic circuits into small devices. However, a high voltage cathode material is required to compensate for the low energy density. Therefore, it is necessary to study all-solid-state thin-film battery based on the high voltage cathode material LNMO. Nevertheless, the electrochemical properties deteriorate due to the problem of the interface between LiNi_0.5Mn_1.5O₄ (LNMO) and the solid electrolyte LiPON. In this study, to solve this problem, amorphous V₂O₅ was deposited as an interlayer between LNMO and LiPON. We confirmed the possibility of improving cycle performance of LNMO based thin-film battery. We expect that the results of this study can extend the battery lifespan of small devices using LNMO based all-solid-state thin-film battery.