• 제목/요약/키워드: Interlayer film

검색결과 171건 처리시간 0.024초

중간층을 이용한 DLC 박막의 밀착력에 관한 연구 (Study on Adhesion of DLC Films with Interlayer)

  • 김강삼;조용기
    • 한국표면공학회지
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    • 제43권3호
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    • pp.127-131
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    • 2010
  • Adhesion of DLC film is very significant property that exhibits wear resistance, chemical inertness and high hardness when being deposited to metal substrate. This study was considered that change adhesion of DLC film produced by Plasma Enhanced Chemical Vapor Deposition can be presented through inserting interlayer (Cr, Si-C:H). The thickness of interlayer was result of changing adhesion and residual stress. It was showed that the maximum 12 N of adhesion is on DLC film of Cr interlayer, and that a tendency is to be increased residual stress depend on the thickness. DLC film of Si-C:H interlayer represented 16 N of adhesion at $1{\mu}m$, whereas adhesion is decreased when the thickness is increased. For the interlayer at multi-layer, it was the best that adhesion of Cr/Si-C:H/DLC film was 33 N. Si-C:H interlayer at DLC film controled adhesion of the whole film. It was relaxed the internal stress of DLC film produced by inserting Cr, Si-C:H interlayer.

중간층 조건에 따른 Cr-Mo-N 막의 상형성 및 마찰마모 거동 연구 (Tribology and Phase Evolution of Cr-Mo-N Coatings with Different Interlayer Condition)

  • 양영환;여인웅;박상진;임대순;오윤석
    • 한국표면공학회지
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    • 제44권6호
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    • pp.269-276
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    • 2011
  • Phase evolution and tribological behavior of Cr-Mo-N multi compositional films with different interlayer were investigated. The films were deposited by hybrid PVD (Physical Vapor Deposition) system consisted of dc unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. A pure molybdenum (Mo) was used as sputtering target and also a pure Cr was used as AIP target to form the Cr-Mo-N films. Various growth planes were found, no textured surface, in all of the multi composition films. Maximum value of microhardness was measured in Cr-Mo-N film with Mo interlayer as 29 GPa. Composition film was mainly showed the aspect of the adhesive wear than CrN film. The friction coefficient was decreased from 0.6 for pure CrN coating to 0.35 for Cr-Mo-N film with Mo interlayer. This result may come from the formation of metal oxide tribo-layer which is known as solid lubricant during the wear test.

Synthetic antiferromagnet CoFe/Ru/CoFe/FeMn을 이용한 스핀 밸브 구조의 interlayer coupling field (Interlayer Coupling Field in Spin Valves with CoEe/Ru/CoFe/FeMn Synthetic Antiferromagnet)

  • 김광윤;신경호;김희중;장성호;강탁
    • 한국자기학회지
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    • 제10권5호
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    • pp.203-209
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    • 2000
  • Synthetic antiferromagnet CoFe/Ru/CoFe/FeMn을 사용하고 자유층으로 NiFe/CoFe 이중 층을 사용한 top스핀밸브 구조를 dc magnetron 방식으로 제조하여, 자유층과 구속층의 두께변화에 따른 자기적 특성과 interlayer coupling field티 변화를 조사하였다 Si/Ta(50 $\AA$)/NiFe(x $\AA$)/CoFe(y $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ri(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) top synthetic 스핀밸브 시료에서 자유층의 두께 감소에 따른 interlayer coupling field를 조사한 결과 interlayer coupling field가 증가하였으며, 이것은 Neel 모델에 의한 정자기 교환결합에 기인하는 것으로 설명하였다. Top synthetic 스핀 밸브에서 Cu에 인접한 자성층(Pl)과 FeMn에 인접한 자성층(P2) 두께 차이에 따른 interlayer coupling field 의 의존성을 조사한 결과 $t_{P1}$> $t^{P2}$ 일 경우 interlayer coupling field(층간 교환 결합력 세기)는 기존 스핀 밸브에서 적용한 Kools이 제시한 modified Nel 모델에 잘 부합되나, $t_{P1}$ $\leq$ $t_{P2}$ 인 경우 모델과 부합되지 않음으로 새로운 모델이 필요함을 확인하였다 Cu 두께에 변화에 따른 층간 교환 결합력 세기 의존성을 조사한 결과 Cu 두께를 32 $\AA$으로 증가시 층간 교환결합력 세기는 10 Oe 이하로 감소하였다.감소하였다.다.

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XPS Study of MoO3 Interlayer Between Aluminum Electrode and Inkjet-Printed Zinc Tin Oxide for Thin-Film Transistor

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • 제12권6호
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    • pp.267-270
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    • 2011
  • In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

An ITO/Au/ITO Thin Film Gas Sensor for Methanol Detection at Room Temperature

  • Jeong, Cheol-Woo;Shin, Chang-Ho;Kim, Dae-Il;Chae, Joo-Hyun;Kim, Yu-Sung
    • Transactions on Electrical and Electronic Materials
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    • 제11권2호
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    • pp.77-80
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    • 2010
  • Indium tin oxide (ITO) films with a 5 nm thick Au interlayer were prepared on glass substrates. The effects of the Au interlayer on the gas sensitivity for detecting methanol vapors were investigated at room temperature. The conductivity of the film sensor increased upon exposure to methanol vapor and the sensitivity also increased proportionally with the methanol vapor concentration. In terms of the sensitivity measurements, the ITO film sensor with an Au interlayer shows a higher sensitivity than that of the conventional ITO film sensor. This approach is promising in gaining improvement in the performance of ITO gas sensors used for the detection of methanol vapor at room temperature.

중간층이 DLC 코팅에 미치는 영향 (The Effects of Interlayer on the DLC Coating)

  • 송진수;남태운
    • Corrosion Science and Technology
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    • 제10권2호
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    • pp.65-70
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    • 2011
  • DLC is considered as the candidate material for application of moving parts in automotive components relatively in high pressure and temperature operating conditions for its high hardness with self lubrication and chemical inertness. The properties of interlayer between the substrate and the DLC film were studied. Arc ion plating method have been employed to deposit onto substrate and sputtering method was used for synthesizing DLC onto interlayer. Among these six types of interlayer, deposited DLC film onto TiCN showed excellent value for characteristics. From the results of analysis for physical properties of DLC films, it seems that the adhesion forces were more important factors than intrinsic mechanical properties such as hardness, roughness and wear resistance of DLC films. AFM(Atomic Force Microscope) was used for understanding roughness of DLC films. Hardnesses of the coating layers were identified by nano-indentation method and adhesions were checked by scratch method.

Bathophenanthroline를 interlayer로 적용한 $C_{60}$ 기반의 n형 유기박막트랜지스터의 성능 (Performances of $C_{60}$ based n-type Organic Thin Film Transistor with A Doped Interlayer Using Bathophenanthroline)

  • 김정수;손희근;이문석
    • 대한전자공학회논문지SD
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    • 제47권8호
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    • pp.7-12
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    • 2010
  • 본 논문에서는 BPhen(Bathophenanthroline)과 BPhen에 Cs가 도핑 된 interlayer를 $C_{60}$활성층과 Al전극사이에 주입해 $C_{60}$을 기반으로 한 유기박막트랜지스터 (OTFTs)를 제작하여 전기적 특성을 향상시켰다. BPhen층을 증착하면 유기물과 금속층계면의 표면 거칠기가 낮아져 결과적으로 성능이 향상되는 것을 알 수 있었다. 또한 BPhen에 Cs가 도핑 된 interlayer를 co-evaporation을 이용하여 주입하였을 경우는 Contact resistance가 감소하였다. 이러한 $C_{60}$을 기반으로 한 BPhen에 Cs가 도핑 된 interlayer를 삽입한 유기박막트랜지스터는 향후 n형 유기박막트랜지스터를 제작하는데 있어서 적용이 될 것이라고 기대된다.

투과 전자 현미경을 이용한 다이아몬드 박막과 실리콘 기판의 계면 연구 (Investigation of the interface between diamond film and silicon substrate using transmission electron microscopy)

  • 김성훈
    • 한국결정성장학회지
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    • 제10권2호
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    • pp.100-104
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    • 2000
  • 다이아몬드 박막을 마이크로웨이브 플라즈마 방법을 이용하여 실리콘 기판위에 증착하였다. 증착된 다이아몬드 박막과 실리콘 기판의 단면을 이온 밀링 방법으로 식각한후, 경계면을 투과 전자 현미경으로 분석하였다. 다이아몬드 박막은 실리콘 기판위에 직접 성장되거나 또는 중간층이 형성된후 성장됨을 알 수 있었다. 중간층의 구성은 주로 Sic 또는 무정형 탄소로 이루어졌으며 중간층의 두께는 경계면을 따라 다르게 변하였다. 전자 회절 패턴으로부터, 경계면 주위에 잘 발달된 실리콘 기판과 다이아몬드의 결정면들이 서로 적합하게 성장되었고 있음을 알 수 있었다. 이 결과들로부터 실리콘 기판위에 성장되는 다이아몬드 박막의 초기 성장 형태를 추론할 수 있었다.

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Diamond-like carbon film의 열적거동에 관한 연구 (A study on thermal behavior of Diamond-like carbon film)

  • 조광래;노정연;소명기
    • 산업기술연구
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    • 제32권A호
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    • pp.119-123
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    • 2012
  • Diamond-like carbon(DLC) thin films with interlayer were deposited on silicon substrate using a reactive sputtering method. The thermal stability of the films was investigated by annealing the films for 1hr in air in the range of 100 to $500^{\circ}C$. The $I_D/I_G$ ratio increased with increasing temperature as related to the $sp^3-to-sp^2$transition. Accordingly, G-position shifting started from $150^{\circ}C$ in the DLC films and from $270^{\circ}C$ in the a-Si/DLC films. Moreover, in the case of the a-Si/DLC films the film still observed even after annealing at $500^{\circ}C$. The thermal stability of the reactive sputtered DLC films appeared to be improved by the a-Si interlayer.

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