• Proceedings of the Korean Institute of Building Construction Conference
• /
• 2018.11a
• /
• pp.38-39
• /
• 2018

Foame concrete was used to reduce insulation problems and interlayer noise in slab. There have been no studies on the physical properties of foaming agents using foamed concrete,Only the physical properties of foamed concrete mixed with foam agent. It is judged that the density and distribution of Foams will be changed when the pressre is changed when the bubble is formed. In this study to investigate the changes of Foam density and the physical performance of foamed concrete by changing the pressure during Foam formation.

• Journal of Powder Materials
• /
• v.12 no.2 s.49
• /
• pp.151-158
• /
• 2005

Porous graphite was synthesized by removal of template in HF after pyrolysis of pyrolyzed fuel oil (PFO) at $900^{\circ}C$ using the template of Co or Ni intercalated magadiite. Porous graphite had a plate structure like template, and d-spacing value of about 0.7 nm. The extent of crystallization of porous graphite was dependent on the contents of Co or Ni intercalated in interlayer. It can be explained that the metal such as Co and Ni acts as a promotion catalyst for graphite formation. Porous graphite shows the surface area of $328\sim477 m^2/g$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.31 no.2
• /
• pp.69-72
• /
• 2021

The reaction of ammonium ferric sulfate with sodium borohydride in laponite sol yields nanoiron colloidal solution. This solution in air forms transparent yellow brown solution. The resulting solution reacts with bidentate chelating ligands. The reaction products are characterized by UV-Vis absorption spectroscopy and X-ray diffraction. All compounds show metal to ligand charge transfer band in the region of 400~650 nm in UV-Vis absorption spectra. This indicates the formation of iron-ligand complex by air oxidation of nanoiron. Also, XRD patterns exhibit that the iron-ligand complex is intercalated in the interlayer of laponite.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.3
• /
• pp.41-47
• /
• 2020

The effect of Co interlayer on the interfacial reliability of SiN_x/Co/Cu thin film structure for advanced Cu interconnects was systematically evaluated by using a double cantilever beam test. The interfacial adhesion energy of the SiN_x/Cu thin film structure was 0.90 J/㎡. This value of the SiN_x/Co/Cu thin film structure increased to 9.59 J/㎡.Measured interfacial adhesion energy of SiN_x/Co/Cu structure was around 10 times higher than SiN_x/Cu structure due to CoSi₂ reaction layer formation at SiN_x/Co interface, which was confirmed by X-ray photoelectron spectroscopy analysis. The interfacial adhesion energy of SiN_x/Co/Cu structure decreased sharply after post-annealing at 200℃ for 24 h due to Co oxidation at SiN_x/Co interface. Therefore, it is required to control the CoO and Co₃O₄ formation during the environmental storage of the SiN_x/Co/Cu thin film to achieve interfacial reliability for advanced Cu interconnections.

• Journal of the Mineralogical Society of Korea
• /
• v.24 no.4
• /
• pp.313-320
• /
• 2011

Mica-type phyllosilicate particles in the shales of the Manhang formation at the Taeback area in the Kangwon Province were studied using electron probe microanalysis (EPMA) and transmission electron microscopy (TEM). The average chemical formula of the mica-type phyllosilicate mineral analysed by EPMA is $K_{1.35}(Fe_{0.18}Mg_{0.03}Al_{3.86})(Si_{6.55}Al_{1.45})O_{20}(OH)_4$. Low K contents compared to the ideal chemistry of muscovite indicate the presence of illite in the mica-type phyllosilicate particle. X-ray diffraction study showed that pyrophyllite commonly coexists with muscovite in the shales from the Manhang Formation. TEM observations showed both the interlayer and intralayer mixing of $9.3-{\AA}$ pyrophyllite and $10-{\AA}$ muscovite layers. The low K content of the mica-type phyllosilicates apparently come from the close mixing of pyrophyllite and muscovite.

• Korean Journal of Materials Research
• /
• v.22 no.4
• /
• pp.202-206
• /
• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• Journal of the Korean Vacuum Society
• /
• v.6 no.4
• /
• pp.326-336
• /
• 1997

From the concept that the ion implantation-induced defect is one of the major factors in determining source/drain junction characteristics, high quality ultra-shallow $p^+$-n junctions were formed through the control of ion implantation-induced defects in silicon substrate. In conventional process of the junction formation. $p^+$ source/drain junctions have been formed by $^{49}BF_2^+$ ion implantation followed by the deposition of TEOS(Tetra-Ethyl-Ortho-Silicate) and BPSG(Boro-Phospho-Silicate-Glass) films and subsequent furnace annealing for BPSG reflow. Instead of the conventional process, we proposed a series of new processes for shallow junction formation, which includes the additional low temperature RTA prior to furnace annealing, $^{49}BF_2^+/^{11}B^+$ mixed ion implantation, and the screen oxide removal after ion implantation and subsequent deposition of MTO (Medium Temperature CVD oxide) as an interlayer dielectric. These processes were suggested to enhance the removal of ion implantation-induced defects, resulting in forming high quality shallow junctions.

• Macromolecular Research
• /
• v.11 no.4
• /
• pp.260-266
• /
• 2003

Ethylene vinyl acetate (EVA)/clay nanocomposites were synthesized by blending a solution of ethylene vinyl acetate copolymer containing 12% vinyl acetate abbreviated as EVA-12 in toluene and dispersion of dodecyl ammonium ion intercalated montmorillonite (l2Me-MMT) in N,N-dimethyl acetamide (DMAc). X-ray patterns of sodium montmorillonite ($Na^+$-MMT) and 12Me-MMT exhibited $d_{001}$ peak at $2{\theta}=7.4^{\circ}$ and $2{\theta}=5.6^{\circ}$ respectively; that is, the interlayer spacing of MMT increased by about 0.39 nm due to intercalation of dodecyl ammonium ions. The XRD trace of EVA showed no peak in the angular range of $3-10^{\circ}(2{\theta})$. In the XRD patterns of EVA/clay hybrids with clay content up to 6 wt% the basal reflection peak of 12Me-MMT was absent. leading to the formation of delaminated configuration of the composites. When the 12Me-MMT content was 8 wt% in the EVA-12 matrix, the hybrid revealed a peak at about $2{\theta}=5.6^{\circ}$, owing to the aggregation of aluminosilicate layers. Transmission electron microscopic photograph exhibited that an average size of 12-15 nm clay layers were randomly and homogeneously dispersed in the polymer matrix, which led to the formation of nanocomposite with delaminated configuration. The formation of delaminated nanocomposites was manifested through the enhancement of mechanical properties and thermal stability, e.g. tensile strength of an hybrid containing only 2 wt% 12Me-MMT was enhanced by about 36% as compared with neat EVA-12.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.4
• /
• pp.1273-1276
• /
• 2011

Laponite samples intercalated with $Tb^{3+}$ or $Tb^{3+},Ce^{3+}$ ions were prepared by exchange of Na+ ions in interlayers with $Tb^{3+}$ or $Ce^{3+}$ ions. Strong green and weak blue emissions under vacuum ultraviolet (VUV) excitation (${\lambda}$ = 158 nm) were observed due to the $^5D_4{\rightarrow}^7F_J$ and $^5D_3{\rightarrow}^7F_J$ emission lines, respectively. $Tb^{3+}$ ions in an interlayer of laponite mainly existed in ion pairs or clusters, as evidenced by the concentration-dependent luminescence of the $Tb^{3+}$ ions on the relative intensities of the $^5D_3{\rightarrow}^7F_J$ and the $^5D_4{\rightarrow}^7F_J$ emission lines, due to the action of a cross-relaxation process. The addition of $Ce^{3+}$ ions increased the thermal stability of $Tb^{3+}$ intercalated laponite up to $650^{\circ}C$ and quenched the $^5D_3{\rightarrow}^7F_J$ emission lines, probably by promoting the formation of $Tb^{3+}$ ion pairs at relatively low $Tb^{3+}$ concentrations.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1270-1271
• /
• 2008

Effects of thin ZnO/Mg interlayers on electrical and optical properties between p-GaN and ITO were characterized for its application to GaN-LEDs. The ZnO and Mg layers were deposited to have various thicknesses (1${\sim}$6nm for ZnO and 1${\sim}$2nm for Mg) by sputtering. After RTA process, the atomic migration between Mg and ZnO and the formation of Ga vacancy were observed from SIMS depth profile, resulting in the increase of hole concentration and the reduction of band bending at the surface region of p-GaN. The sample using ZnO(2nm)/Mg(2nm) interlayer produced the lowest contact resistance with SBH(Schottky barrier height) of 0.576 eV and the transmittance higher than 83% at a wavelength of 460nm when annealed at 500$^{\circ}C$ for 3min in air ambient.