• Ceramist
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• v.21 no.4
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• pp.378-387
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• 2018

The optimal fabrication conditions for $Gd_{0.1}Ce_{0.9}O_{2-{\delta}}$(GDC) buffer layer and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LSCF) cathode on 1mol% $CeO_2-10mol%\;Sc_2O_3$ stabilized $ZrO_2$ (CeScSZ) electrolyte were investigated for application of IT-SOFCs. GDC buffer layer was used in order to prevent undesired chemical reactions between LSCF and CeScSZ. These experiments were carried out with $5{\times}5cm^2$ anode supported unit cells to investigate the tendencies of electrochemical performance, Microstructure development and interface reaction between LSCF/GDC/CeScSZ along with the variations of GDC buffer layer thickness, sintering temperatures of GDC and LSCF were checked, respectively. Electrochemical performance was analyzed by DC current-voltage measurement and AC impedance spectroscopy. Microstructure and interface reaction were investigated by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). Although the interfacial reaction between these materials could not be perfectly inhibited, We found that the cell, in which $6{\mu}m$ GDC interlayer sintered at $1200^{\circ}C$ and LSCF sintered at $1000^{\circ}C$ were applied, showed good interfacial adhesions and effective suppression of Sr, thereby resulting in fairly good performance with power density of $0.71W/cm^2$ at $800^{\circ}C$ and 0.7V.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1012-1017
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• 1999

Low resistance ohmic contacts to the Si-doped $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$(~$\times10^{19}\textrm{cm}^{-3}$) were obtained using the W metallization schemes. Specific contact resistance decreased with increasing annealing temperature. The lowest resistance is obtained after a nitrogen ambient annealing at $950^{\circ}C$ for 90 s, which results in a specific contact resistance of $2.75\times10^{-8}\Omega\textrm{cm}^{-3}$. Interfacial reactions and surface are analyzed using x-ray diffraction and scanning electron microscopy (SEM). The X-ray diffraction results show that the reactions between the W film and the $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$ produce a $\beta$-$W_2N$ phase at the interface. The SEM result shows that the morphology of the contacts is stable up to a temperature as high as $850^{\circ}C$. Possible mechanisms are proposed to describe the annealing temperature dependence of the specific contact resistance.

• Bulletin of the Korean Chemical Society
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• v.24 no.11
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• pp.1659-1663
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• 2003

$Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.549-555
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• 2016

We have investigated a glass-forming region of $V_2O_5-P_2O_5-ZnO$ glass and the effects of the addition of modifier oxides ($B_2O_3$) to the glass systems as a sealing material to improve the adhesion between the glass frits and a soda lime substrate. Thermal properties and coefficient of thermal expansion were measured using a differential scanning calorimetry, a dilatometer and a hot stage microscopy. Structural changes and interfacial reactions between the glass substrate and the glass frit after sintering (at $400^{\circ}C$ for 1 h) were measured by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and scanning electron microscope. The results showed that the adhesion strength increases as the content of $B_2O_3$ at 5 mol% increases because of changes in the structural properties. It seems that the glass structures change with $B_2O_3$, and the $Si^{4+}$ ions from the substrate are diffused to the sealing glass. From these results, we could understand the mechanism of strengthening of the adhesion of soda lime silica substrate by ion-diffusion from the substrate to the glass.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.47-54
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• 2008

In this paper, we studied how and why did abnormal IMC growth at component affect on board level mechanical reliability. First, interfacial reactions between Sn2.5Ag0.5Cu solder and electrolytic Ni/Au UBM of component side were investigated with reflow times and thermal aging time. Also, to compare mechanical reliability of component level, shear energy was evaluated using the ball shear test conducted with variation of shear tip speed. Finally, to evaluate mechanical reliability of board level, we surface-mounted component fabricated with each condition on PCB side. After conducting of 3 point bending test and impact test, we confirmed solder joint crack mode using cross-sectioning and dye & pry penetration method.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.4
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• pp.425-429
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• 2011

In the unlikely of nuclear reactor meltdown, the leaked core melt or corium must be contained in a device called core-catcher so that the corium can be cooled and stabilized. The ex-vessel behavior of corium involves complex physical and chemical mechanisms of flow propagation, heat transfer, and reactions with sacrificial substrates. In this study, the detailed characteristics of corium flow and heat transfer were investigated by using a commercial CFD code for VULCANO VE-U7 test reported in the literature. The volume-of-fluid (VOF) model was used to predict the interfacial surface formation of corium and the surrounding air, and the discrete ordinate model was adopted to calculate radiation between corium and the surroundings. It was found that cooling via radiation through the top surface of corium had a dominant effect on the temperature and viscosity profiles at the front of the corium flow.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.43-49
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• 2007

Thickness of intermetallic compounds and consumption rates of under bump metallurgies (UBMs) were investigated in wafer-level solder bumping with variations of UBM materials and reflow times. In the case of Cu UBM, $0.6\;{\mu}m-thick$ intermetallic compound layer was formed before reflow of Sn solder, and the average thickness of the intermetallic compound layer increased to $4\;{\mu}m$ by reflowing at $250^{\circ}C$ for 450 sec. On the contrary, the intermetallic layer had a thickness of $0.2\;{\mu}m$ on Ni UBM before reflow and it grew to $1.7\;{\mu}m$ thickness with reflowing for 450 sec. While the consumption rates of Cu UBM were 100nm/sec fur 15-sec reflow and 4.50-sec for 450-sec reflow, those of Ni UBM decreased to 28.7 nm/sec for 15-sec reflow and 1.82 nm/sec for 450-sec reflow.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.335-340
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• 2000

We investigated the role of the capping layers in the formation of the cobalt silicide in Co/Si systems with TiN and Ti capping layers and without capping layers. The Co/Si interfacial reactions and the phase transformations by the rapid thermal annealing (RTA) processes were observed by sheet resistance measurements, XRD, SIMS and TEM analyses for the clean silicon substrate as well as for the chemically oxidized silicon substrate by $H_2SO_4$. We observed the retardation of the cobalt disilicide formation in the Co/Si system with Ti capping layers. In the case of Co/$SiO_2$/Si system, cobalt silicide was formed by the Co/Si reaction due to with the dissociation of the oxide layer by the Ti capping layers.

• Progress in Superconductivity
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• v.9 no.2
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• pp.177-182
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• 2008

[ $MgB_2$ ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures $500\;{\sim}\;600^{\circ}C$ and under the reactor pressures of $25\;{\sim}\;50\;Torr$. There are some interfacial reactions in the as-grown films with impurities of mostly $Mg_2Si$, $MgAl_2O_4$, and other phases. The $T_c$'s of $MgB_2$ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly $Mg_2Si$ impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

• Journal of Korea Foundry Society
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• v.13 no.4
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• pp.369-381
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• 1993

Aluminum alloy(AC8A) matrix composites reinforced with SiC particles(10% in vol.) were fabricated by Centrifugal Spray Deposition(CSD) process. The microstructures were investigated in order to evaluate both the mixing mode between aluminum matrix and SiC particles, and the effect of SiC particles on the cooling behaviours of droplets during flight and preforms deposited. A non-continuum mathematical calculation was performed to explain and to quantify the evolution of microstructures in the droplets and preforms deposited. Conclusions obtained are as follows; 1. The powders produced by CSD process showed, in general, ligament type, and more than 60% of the powders produced were about 300 to 850 um in size. 2. AC8A droplets solidified during flight showed fine dendritic structure, but AC8A droplets mixed with SiC particles showed fine equiaxed grain structure, and eutectic silicon were formed to crystallize granularly between fine aluminum grains. 3. SiC particles seem to act as a nucleation sites for pro-eutectic silicon during solidification of AC8A alloy. 4. The microstructure of composite powders formed by CSD process showed particle embedded type, and resulted in dispersed type microstructure in preforms deposited. 5. The pro-eutectic silicon crystallized granularly between fine aluminum grains seem to prohibit grains from growth during spray deposition process. 6. The interfacial reactions between aluminum matrix and SiC particles were not observed from the deposit performs and the solidified droplets. 7. The continuum model seem to be useful in connecting the processing parameters with the resultant microstructures. From these results, it was concluded that the fabrication of aluminum matrix composites reinforced homogeneously with SiC particles was possible.