• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.23-28
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• 2000

A block-oxide layer was formed on the surface of Cu-based leadframe by chamical oxidation method in order to enhance the adhesion strength between Cu-based leadframe and epoxy molding compound (EMC) Using sandwiched double cantilever beam (SDCB) specimens, the adesion strength was measured in terms of interfacial fracture toughness, G$\sub$IC//Results showed that the black-oxide layer was composed of two kinds of layers: pebble-like Cu$_2$O layer and acicular CuO layer, At the initial stage of oxidation the Cu$_2$O layer was preferentially formed and thickened up to around 200 nm whithin 1 minute of the oxidation time. Then the CuO layer started to from atop of the Cu$_2$O layer and thickened up to around 1300 nm until 20 minutes. As soon as the CuO layer formed, the thickness of Cu$_2$O layer began to reduce and finally reached to around 150 nm. The pre-cleaned and the Cu$_2$O coated leadframes showed almost no adhesion of EMC, however, as the CuO precipitates appeared and became continuous, G$\sub$IC/ increased up to around 80 J/㎡. Further oxidation raised G$\sub$IC/ up. to around 100 J/㎡.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.49-55
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• 2016

The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.132-138
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• 2003

We investigated the polarization retention characteristics of ferroelectric capacitors with $Pb(Zr,Ti)O_3$ (PZT) thin films which were fabricated by different deposition methods. In thermally-accelerated retention tests, PZT films which were prepared by a chemical solution deposition (CSD) method showed rapid decay of retained polarization charges as the thickness of the films decreased down to 100 nm, while the films which were grown by metal organic chemical vapor deposition (MOCVD) retained relatively large non-volatile charges at the corresponding thickness. We concluded that in the CSD-grown films, the thicker interfacial passive layer compared with the MOCVD-grown films had an unfavorable effect on retention behavior. We observed the existence of such interfacial layers by extrapolation of the total capacitance with thickness of the films and the capacitance of these layers was larger in MOCVD-grown films than in CSD-grown films. Due to incomplete compensation of surface polarization charges by the free charges in the metal electrodes, the interfacial field activated the space charges inside the interfacial layers and deposited them at the boundary between the ferroelectric layer and the interfacial layer. Such space charges built up an internal field inside the films, which interfered with domain wall motion, so that retention property at last became degraded. We observed less imprint which was a result of less internal field in MOCVD-grown films while large imprint was observed in CSD-grown films.

• Korean Journal of Materials Research
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• v.33 no.1
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• pp.8-14
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• 2023

In order to broaden the range of application of light weight aluminum alloys, it is necessary to enhance the mechanical properties of the alloys and combine them with other materials, such as cast iron. In this study, the effects of adding small amounts of Cu and Zr to the Al-Si-Mg based alloy on tensile properties and corrosion characteristics were investigated, and the effect of the addition on the interfacial compounds layer with the cast iron was also analyzed. Although the tensile strength of the Al-Si-Mg alloy was not significantly affected by the additions of Cu and Zr, the corrosion resistance in 3.5 %NaCl solution was found to be somewhat lowered in this research. The influence of Cu and Zr addition on the type and thickness of the interfacial compounds layer formed during compound casting with cast iron was not significant, and the main interfacial compounds were identified to be Al₅FeSi and Al₈Fe₂Si phases, as in the case of the Al-Si-Mg alloys.

• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.665-671
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• 2005

LSGM is known to show very serious interfacial reaction with other unit cell components, such as electrode, electrode functional or buffering layers. Especially, the formation of very resistive LaSr$Ga_{3}$$O_{7}$ phase at the interface of an anode and an electrolyte is the most problematic one in LSGM-based SOFCs. In this study, we investigated the interfacial reactions in LSGM-based SOFCs under different unit cell configurations. According to the microstructural analysis on the interfacial layer between an electrolyte and its neighboring component, serious interfacial reaction zone was observed. From the electrical and electrochemical characterization of the cell, we found such an interfacial reaction zone not only increased the internal ohmic resistance but also decreased the OCV(Open Cell Voltage) of the unit cell, and thus consequently deteriorated the unit cell performance.

• Geomechanics and Engineering
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• v.16 no.1
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• pp.49-58
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• 2018

Open-mode cracks could be commonly observed in layered rocks. A concept model is firstly used to explore the mechanism of the vertical cracks (VCs) in the top layer. Then the crack behaviour of the two-layer model is simulated based on a cohesive zone model (CZM) for layer interfaces and a plastic-damage model for rocks. The model indicates that the tensile stress normal to the VCs changes to compression if the crack spacing to layer thickness ratio is lower than a threshold. The results indicate that there is a threshold for interfacial shear strength that controls the crack patterns of the layered system. If the shear strength is lower than the threshold, the top layer is meshed by the VCs and interfacial cracks (ICs). When the shear strength is higher than the threshold, the top layer is meshed by the VCs and parallel cracks (PCs). If the shear strength is comparative to the threshold, a combining pattern of VCs, PCs and ICs for the top layer can be formed. The evolutions of stress distribution in the crack-bound block indicate that the ICs and PCs can reduce the load transferred for the substrate layer, and thus leads to a crack saturation state.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.710-714
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• 2007

LSGM$(La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2}O_{3-{\delta}})$ is the very promising electrolyte material for lower-temperature operation of SOFCs, especially when realized in anode-supported cells. But it is notorious for reacting with other cell components and resulting in the highly resistive reaction phases detrimental to cell performance. LDC$(La_{0.4}Ce_{0.6}O_{1.8})$, which is known to keep the interfacial stability between LSGM electrolyte and anode, was adopted in the anode-supported cell, and its effect on the interfacial reactivity and electrochemical performance of the cell was investigated. No severe interfacial reaction and corresponding resistive secondary phase was found in the cell with LDC buffer layer, and this is due to its ability to sustain the La chemical potential in LSGM. The cell exhibited the open circuit voltage of 0.64V, the maximum power density of 223 $mW/cm^2$, and the ohmic resistance of $0.17{\Omega}cm^2$ at $700^{\circ}C$. These values were much improved compared with those from the cell without any buffer layer, which implies that formation of the resistive reaction phases in LSGM and then deterioration of the cell performance is resulted mainly from the La diffusion from LSGM electrolyte to anode.

• Structural Engineering and Mechanics
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• v.52 no.1
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• pp.1-17
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• 2014

An interfacial penny-shaped crack between piezoelectric layer and elastic half-space subjected to mechanical and electric loads is investigated. Using Hankel transform technique, the mixed boundary value problem is reduced to a system of singular integral equations. The integral equations are further reduced to a system of algebraic equations with the aid of Jacobi polynomials. The stress intensity factor and energy release rate are determined. Numerical results reveal the effects of electric loadings and material parameters of composite on crack propagation and growth. The results seem useful for design of the piezoelectric composite structures and devices of high performance.

• Journal of Information Display
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• v.12 no.4
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• pp.223-227
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• 2011

Electrophosphorescent devices with ionomer-type hole transport layers were investigated. On top of the 3,4-ethylenedioxy thiophene:poly(4-styrene sulfonate) [PEDOT:PSS] structures, fluoropolymer interfacial layers (FPIs) with different side chain lengths were introduced. Both for the PEDOT:PSS/FPI (layered) and PEDOT:PSS (mixed) structures with soluble phosphorescent emitters, the short-side-chain FPIs showed higher efficiency. The difference in the electrical properties of the two FPIs for bipolar (light-emitting) devices was not clear, but the hole-only device clearly showed the favored hole injection at the PEDOT:PSS/FPI structure with a shorter side chain, a copolymer of tetrafluoroethylene and sulfonyl fluoride vinyl ether.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.115-117
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• 2009

Interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl are determined. After $O_2$ plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the $O_2$ plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier.