• Applied Chemistry for Engineering
• /
• v.19 no.5
• /
• pp.471-476
• /
• 2008

The thermal and mechanical properties and morphology of epoxy/polyamide/DDS/2E4MZ-CNS reactive blends with various amounts of polyamide were investigated. The amount of polyamide was 10, 20, and 30 phr and 2 phr of catalyst was added to the blend to cure at $180^{\circ}C$ for 30 min. By adding the catalyst, 2E4MZ-CNS, to the blend, the cure reaction occurred at a lower temperature. From the SEM images, it was found that the boundary of separated-phase was unclear and the phase was co-continuous. Without the catalyst, however, the boundary of separated-phase was clear. The control of cure temperature and morphology could be achieved by using a proper catalyst and consequently the mechanical strength increased by 20% compared to the blend without the catalyst due to the strong interaction between epoxy matrix and phase-separated polyamide at the interface.

• Korean Journal of Materials Research
• /
• v.8 no.12
• /
• pp.1182-1189
• /
• 1998

High quality $TiN/TiSi_2$-bilayers were formed on the Si(100) substrate at room temperature and at $600^{\circ}C$ first by coevaporation of stoichiometric Si and Ti(Si:Ti = 2:1) fellowed by Ti reactive deposition in N, gas ambient, and in situ annealing in ultrahigh vacuum. Stoichiometric $Ti_{0.}N_{0.5}$, films with (111) texture and $C54-TiSi_2$ films were grown by annealing at temperatures above $700^{\circ}C$. $TiN/C54-TiSi_2$/Si(100) interface was clear and flat without agglomoration, and $CS4-TiSi_2$ film was epitxailly grown. The sheet resistance of the $TiN/TiSi_2$- bilayer decreased as the annealing temperature increased and about $2.5\omega/\textrm{cm}^2$ was obtained from the sample annealed over $700^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.4
• /
• pp.301-307
• /
• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• Journal of the Institute of Convergence Signal Processing
• /
• v.15 no.1
• /
• pp.15-22
• /
• 2014

This paper presents the implementation of a control system of pellet boiler using wood pellet as carbon neutral material. The system also has the additional features to provide remote controlling and monitoring based on home networking technology through either public switched telephone networks or mobile communication networks. It consists of three kinds of sub-modules; a main controller provides basic and additional features such as a setting of temperature, a supplying of wood pellet, a controlling of ignition and fire-power, and a removing of soot. The second is temperature controller of individual rooms which is connected to the main controller through RS-485 links. And interface modules with PSTN and mobile networks can support remote controlling and monitoring the functions. The test results under the heating area of $172m^2$ show a thermal efficiency of 93.6%, a heating power of 20,640kcal/hr, and a fuel consumption of 5.54kg/hr. These results are superior to those of the conventional pellet boilers. In order to obtain the such high performance, we newly applied a 3-step ignition flow, a flame detection by $C_dS$ sensor, and a fire-power control by fine controlling of shutter to our pellet boiler.

• Journal of Sensor Science and Technology
• /
• v.5 no.5
• /
• pp.79-84
• /
• 1996

A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.

• Polymer(Korea)
• /
• v.35 no.3
• /
• pp.238-243
• /
• 2011

Organic/inorganic hybrid materials have a lot of interest in various areas due to their fascinating properties. To control the location and dispersion of inorganic nanoparticles within polymer matrix. thiol-terminated polymeric ligands have been widely used to tune the surface property of nanoparticles. However, the specific binding between the thiol functional group and metal is unstable with increasing temperature. To archive the thermally-stable Au nanoparticles, we previously synthesized various UV-crosslinkable polymeric ligands, which have different compositions of polar, UV-crosslinkable azide unit comparing to non-polar 스티렌 units. After crosslinking the Au nanoparticles, it was found that the nanoparticles had superb stability at high temperature (above $180^{\circ}C$). In this work, we used thermally-stable Au nanoparticles to control the location within the polymer matrix. By changing the amount of polar azide units in the polymeric ligands, we could precisely control the location of nanoparticles from one domain to the interface of block copolymer templates.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.229-229
• /
• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• Food Engineering Progress
• /
• v.15 no.2
• /
• pp.175-181
• /
• 2011

By using supercritical carbon dioxide fluid, an attempt was made to extract surface-active substances from defatted rice bran. Extraction was carried out according to D-optimal design and results were analyzed by response surface methodology to establish optimum condition. It was found that pressure, temperature and co-solvent (ethanol) influenced in a different extent on the extraction efficiency (i.e., yield and interfacial tension) of surface-active substances. Among them, co-solvent was found to be a major influencing factor, where maximum yield (2.62%) was observed at the highest content (250 g). In addition, it also affected most on the interfacial tension at the oil-water interface but in this case the lowest interfacial tension value (9.51 mN/m) was found when added lowest (50 g). In conclusion, it was estimated that the optimum extraction condition was to be pressure 350bar, temperature $62^{\circ}C$ and co-solvent content 50 g in this study, where extraction yield was 0.69% and interfacial tension to be 10.1 mN/m.

• Clean Technology
• /
• v.27 no.3
• /
• pp.261-268
• /
• 2021

Equilibrium, kinetics, and thermodynamics of adsorption of acid black 1 (AB1) by coal-based granular activated carbon (CGAC) were investigated with the adsorption variables of initial concentration of dye, contact time, temperature, and pH. The adsorption reaction of AB1 by activated carbon was caused by electrostatic attraction between the surface (H⁺) of activated carbon and the sulfite ions (SO₃^-) and nitrite ions (NO₂^-) possessed by AB1, and the degree of reaction was highest at pH 3 (97.7%). The isothermal data of AB1 were best fitted with Freundlich isotherm model. From the calculated separation factor (1/n) of Freundlich, it was confirmed that adsorption of AB1 by activated carbon could be very effective. The heat of adsorption in the Temkin model suggested a physical adsorption process (< 20 J mol^-1). The kinetic experiment favored the pseudo second order model, and the equilibrium adsorption amount estimated from the model agreed to that given by the experiments (error < 9.73% ). Intraparticle diffusion was a rate controlling step in this adsorption process. From the activation energy and enthalpy change, it was confirmed that the adsorption reaction is an endothermic reaction proceeding with physical adsorption. The entropy change was positive because of an active reaction at the solid-liquid interface during adsorption of AB1 on the activated carbon surface. The free energy change indicated that the spontaneity of the adsorption reaction increased as the temperature increased.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.4
• /
• pp.61-68
• /
• 2023

In this study, Sn-3.5Ag-15.0Fe composite solder was manufactured and applied to TLP bonding to change the entire joint into a Sn-Fe IMC(intermetallic compound), thereby applying it as a high-temperature solder. The FeSn₂ IMC formed during the bonding process has a high melting point of 513℃, so it can be stably applied to power modules for power semiconductors where the temperature rises up to 280℃ during use. As a result of applying ENIG surface treatment to both the chip and substrate, a multi-layer IMC structure of Ni₃Sn₄/FeSn₂/Ni₃Sn₄ was formed at the joint. During the shear test, the fracture path showed that cracks developed at the Ni₃Sn₄/FeSn₂ interface and then propagated into FeSn₂. After 2hours of the TLP joining process, a shear strength of over 30 MPa was obtained, and in particular, there was no decrease in strength at all even in a shear test at 200℃. The results of this study can be expected to lead to materials and processes that can be applied to power modules for electric vehicles, which are being actively researched recently.