• Title/Summary/Keyword: Interface states

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Interactive Facial Expression Animation of Motion Data using Sammon's Mapping (Sammon 매핑을 사용한 모션 데이터의 대화식 표정 애니메이션)

  • Kim, Sung-Ho
    • The KIPS Transactions:PartA
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    • v.11A no.2
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    • pp.189-194
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    • 2004
  • This paper describes method to distribute much high-dimensional facial expression motion data to 2 dimensional space, and method to create facial expression animation by select expressions that want by realtime as animator navigates this space. In this paper composed expression space using about 2400 facial expression frames. The creation of facial space is ended by decision of shortest distance between any two expressions. The expression space as manifold space expresses approximately distance between two points as following. After define expression state vector that express state of each expression using distance matrix which represent distance between any markers, if two expression adjoin, regard this as approximate about shortest distance between two expressions. So, if adjacency distance is decided between adjacency expressions, connect these adjacency distances and yield shortest distance between any two expression states, use Floyd algorithm for this. To materialize expression space that is high-dimensional space, project on 2 dimensions using Sammon's Mapping. Facial animation create by realtime with animators navigating 2 dimensional space using user interface.

Photodissolution, photodiffusion characteristics and holographic grating formation on Ag-doped $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin film (Ag가 도핑된 칼코게나이드 $As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 광분해, 광확산특성 및 홀로그래픽 격자형성)

  • Chung, Hong-Bay
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.10
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    • pp.461-466
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    • 2006
  • In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

Mobile Location-based SNS(Social Network Service) for the Disabled Students (장애학생을 위한 모바일 위치기반 SNS(Social Network Service))

  • Oh, Young-Hwan
    • Journal of Digital Contents Society
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    • v.12 no.3
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    • pp.361-370
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    • 2011
  • Recent popularity of the smartphone market, with the explosive growth of mobile location-based SNS(Social Network Service), is into the mainstream. SNS aims to cooperate and share information with all users, but mobile SNS is still not easy people with disabilities. In addition to using the Web, it has difficulty to provide an appropriate interface to access such as smartphone for people with disabilities. This paper will specify and analyze the context-awareness technology and SNS function, and study a variety of information that students with disabilities such as time, location and activity states including data collection and analysis of the situation by converting the status information. It has provide that students with disabilities to lead comfortable life in school according to the various types of disabilities, and school information and safety services using mobile location-based SNS.

Envelope-Function Equation and Motion of Wave Packet in a Semiconductor Superlattice Structure

  • Kim, Byoung-Whi;Jun, Young-Il;Jung, Hee-Bum
    • ETRI Journal
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    • v.21 no.1
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    • pp.1-27
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    • 1999
  • We present a new description of envelope-function equation of the superlattice (SL). The SL wave function and corresponding effective-mass equation are formulated in terms of a linear combination of Bloch states of the constituent material with smaller band gap. In this envelope-function formalism, we review the fundamental concept on the motion of a wave packet in the SL structure subjected to steady and uniform electric fields F. The review confirms that the average of SL crystal momentums K = ($k_x,k_y,q$), where ($K_x,k_y$) are bulk inplane wave vectors and q SL wave vector, included in a wave packet satisfies the equation of motion = $_0+Ft/h$; and that the velocity and acceleration theorems provide the same type of group velocity and definition of the effective mass tensor, respectively, as in the Bulk. Finally, Schlosser and Marcus's method for the band theory of metals has been by Altarelli to include the interface-matching condition in the variational calculation for the SL structure in the multi-band envelope-function approximation. We re-examine this procedure more thoroughly and present variational equations in both general and reduced forms for SLs, which agrees in form with the proposed envelope-function formalism. As an illustration of the application of the present work and also for a brief investigation of effects of band-parameter difference on the subband energy structure, we calculate by the proposed variational method energies of non-strained $GaAs/Al_{0.32}Ga_{0.68}As$ and strained $In_{0.63}Ga_{0.37}As/In_{0.73}Ga_{0.27}As_{0.58}P_{0.42}SLs$ with well/barrier widths of $60{\AA}/500{\AA}$ and 30${\AA}/30{\AA}$, respectively.

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Nonlinear Biaxial Shear Model for Fiber-Reinforced Cementitious Composite Panels (섬유보강 고인성 시멘트 복합체 패널의 2축 전단 비선형 모델)

  • Cho, Chang-Geun;Kim, Yun-Yong
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.22 no.6
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    • pp.597-605
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    • 2009
  • The present study has been proposed a model for the in-plane shear behavior of reinforced(Engineered Cementitious Composite(ECC) panels under biaxial stress states. The model newly considers the high-ductile tensile characteristic of cracked ECC by its multiple micro-cracking mechanism, the compressive strain-softening characteristic of cracked ECC, and the shear transfer mechanism in the cracked interface of ECC element. A series of numerical analyses were performed, and the predicted curves were compared with experimental results. The proposed in-plane shear model, R-ECC-MCFT, was found to be well matched with the experimental results, and it was also demonstrated that reinforced ECC panel showed more improved in-plane shear strength and post peak behavior, in comparing with the conventional reinforced concrete panel.

Design of a BLDC Servo Motor Control System for the Auto Process of Assembly and Supply (자동 조립 및 공급을 위한 BLDC 서보 전동기 제어시스템 설계)

  • Sim, Dong-Seok;Choi, Jung-Keyng
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.5
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    • pp.1095-1101
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    • 2012
  • This paper presents a design of a BLDC servo motor control system for the auto process of assembly and supply using DSP(Digital Signal Processor) controller and IGBT driver. The assembly and supply auto processing system needs torque, speed, position control of servo motor for variable action. This paper implements those servo control with vector control and space vector PWM(Pulse Width Modulation) technique. As CPU of controller, TMS320F240 DSP was adopted because it has PWM waveform generator, A/D converter, SPI(Serial Peripheral Interface) port and many input/output port etc. This control system consists of 3-level hierarchy structure that main host PC manages three sub DSP system which transfer downward command and are monitoring the states of end servo controllers. Each sub DSP system operates eight BLDC servo controllers which control BLDC motor using DSP and IPM. Between host system and sub DSP communicate with RS-422, between main processor and controller communicate with SPI port.

Influence of Dy2O3 Addition on Microstructure and Electrical Properties of Pr6O11 Varistor Ceramics (Pr6O11계 ZnO 바리스터 세라믹스의 미세구조 및 전기적 특성에 미치는 Dy2O3첨가의 영향)

  • Nahm, Choon-Woo;Park, Jong-Ah
    • Korean Journal of Materials Research
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    • v.13 no.10
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    • pp.645-650
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    • 2003
  • The microstructure and electrical characteristics of $Pr_{6}$ $O_{11}$ -based ZnO varistor ceramics composed of $ZnO-Pr_{6}$ $O_{ 11}$/$-CoO-Cr_2$$O_3$-$Dy_2$$O_3$-based ceramics were investigated with $Dy_2$$O_3$content in the range of 0.0∼2.0 mol%. As $Dy_2$$O_3$content was increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu\textrm{m}$ and the density of the ceramic was decreased in the range of 5.53∼4.34 g/㎤. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5∼66.6 with increasing $Dy_2$$O_3$content. The addition of $Dy_2$$O_3$highly enhanced the nonlinear properties of varistors, compared with the varistor without $Dy_2$$O_3$. In particular, the varistor with $Dy_2$$O_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of $(4.19∼0.33) ${\times}$10^{18}$ //㎤ and $(5.38∼1.74) ${\times}$10^{12}$ $\textrm{cm}^2$, respectively, with increasing $Dy_2$$O_3$content. The minimum dissipation factor of 0.0302 was obtained from 0.5mol% $Dy_2$$O_3$.

Design and Implementation of High-Resolution Image Transmission Interface for Mobile Device (모바일 환경을 위한 맞춤형 서비스 유비쿼터스 영상전송 시스템의 설계)

  • Lee, Sang-Wook;Ahn, Yong-Beom;Kim, Eung-Soo
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.4
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    • pp.791-799
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    • 2008
  • An image recognition for surrounding conditions is very important in image transmission. In recently rears, as the information infrastructure is more general, the user-centered demands in which they want to identify by object's states image using wire or wireless environment have increased. However, existing mobile solution could be hard to expect high quality mage, because limitation of software processing according as network based on mobile terminal which has low band width supports software codec. To solve this weak point, this paper describes on hardware codec design based on MPEG-4 which is international video compression standard. Implemented system contains the embedded CPU for optimized design and it works high quality service as transmission speed and resolution in mobile circumstance.

Atomic Layer Deposited ZrxAl1-xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor

  • Li, Jun;Zhou, You-Hang;Zhong, De-Yao;Huang, Chuan-Xin;Huang, Jian;Zhang, Jian-Hua
    • Electronic Materials Letters
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    • v.14 no.6
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    • pp.669-677
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    • 2018
  • In this work, the high ${\kappa}$ $Zr_xAl_{1-x}O_y$ films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of $Zr_xAl_{1-x}O_y$ films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of $Zr_xAl_{1-x}O_y$ gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with $Zr_xAl_{1-x}O_y$ film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the $ZTO/Zr_xAl_{1-x}O_y$ interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.

Effect of Sm2O3 Doping on Microstructure and Electrical Properties of ZPCCA-Based Varistors

  • Nahm, Choon-Woo
    • Korean Journal of Materials Research
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    • v.31 no.10
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    • pp.539-545
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    • 2021
  • The effect of Sm2O3 doping on the microstructure and electrical properties of the ZPCCA-based varistors is comprehensively investigated. The increase of doping content of Sm2O3 results in better densification (from 5.70 to 5.82 g/cm3) and smaller mean grain size (from 7.8 to 4.1 ㎛). The breakdown electric field increases significantly from 2568 to 6800 V/cm as the doping content of Sm2O3 increases. The doping of Sm2O3 remarkably improves the nonlinear properties (increasing from 23.9 to 91 in the nonlinear coefficient and decreasing from 35.2 to 0.2 µA/cm2 in the leakage current density). Meanwhile, the doping of Sm2O3 reduces the donor concentration (the range of 2.73 × 1018 to 1.18 × 1018 cm-3) of bulk grain and increases the barrier height (the range of 1.10 to 1.49 eV) at the grain boundary. The density of the interface states decreases in the range of of 5.31 × 1012 to 4.08 × 1012 cm-2 with the increase of doping content of Sm2O3. The dielectric constant decreases from 1594.8 to 507.5 with the increase of doping content of Sm2O3.