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http://dx.doi.org/10.1007/s13391-018-0079-1

Atomic Layer Deposited ZrxAl1-xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor  

Li, Jun (School of Material Science and Engineering, Shanghai University)
Zhou, You-Hang (School of Material Science and Engineering, Shanghai University)
Zhong, De-Yao (School of Material Science and Engineering, Shanghai University)
Huang, Chuan-Xin (School of Material Science and Engineering, Shanghai University)
Huang, Jian (School of Material Science and Engineering, Shanghai University)
Zhang, Jian-Hua (Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University)
Publication Information
Electronic Materials Letters / v.14, no.6, 2018 , pp. 669-677 More about this Journal
Abstract
In this work, the high ${\kappa}$ $Zr_xAl_{1-x}O_y$ films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of $Zr_xAl_{1-x}O_y$ films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of $Zr_xAl_{1-x}O_y$ gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with $Zr_xAl_{1-x}O_y$ film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the $ZTO/Zr_xAl_{1-x}O_y$ interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.
Keywords
Atomic layer deposition; $Zr_xAl_{1-x}O-y$ thin films; ZTO TFTs; NBIS stability; TS stability;
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