Electronic Materials Letters

The Korean Institute of Metals and Materials (대한금속재료학회)
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Atomic Layer Deposited ZrxAl1-xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor

  • Li, Jun (School of Material Science and Engineering, Shanghai University) ;
  • Zhou, You-Hang (School of Material Science and Engineering, Shanghai University) ;
  • Zhong, De-Yao (School of Material Science and Engineering, Shanghai University) ;
  • Huang, Chuan-Xin (School of Material Science and Engineering, Shanghai University) ;
  • Huang, Jian (School of Material Science and Engineering, Shanghai University) ;
  • Zhang, Jian-Hua (Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University)
  • Received : 2018.01.31
  • Accepted : 2018.06.13
  • Published : 2018.11.10
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Abstract

In this work, the high ${\kappa}$ $Zr_xAl_{1-x}O_y$ films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of $Zr_xAl_{1-x}O_y$ films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of $Zr_xAl_{1-x}O_y$ gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with $Zr_xAl_{1-x}O_y$ film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the $ZTO/Zr_xAl_{1-x}O_y$ interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.

Keywords

Acknowledgement

Supported by : Natural Science Foundation of China, Shanghai Science and Technology Commission, National Science Foundation for Distinguished Young Scholars of China, Science and Technology Commission of Shanghai Municipality

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