• Journal of the Korea Society of Computer and Information
• /
• v.11 no.6 s.44
• /
• pp.133-141
• /
• 2006

Recently many wearable computers have been developed. But they still have many user interface problems from both an input and output perspective. This paper presents a wearable user interface based on EOG(electrooculogram) sensing circuit and marker recognition. In the proposed user interface, the EOG sensor circuit which tracks the movement of eyes by sensing the potential difference across the eye is used as a pointing device. Objects to manipulate are represented human readable markers. And the marker recognition system detects and recognize markers from the camera input image. When a marker is recognized, the corresponding property window and method window are displayed to the head mounted display. Users manipulate the object by selecting a property or a method item from the window. By using the EOG sensor circuit and the marker recognition system, we can manipulate an object with only eye movement in the wearable computing environment.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 1998.04b
• /
• pp.6-6
• /
• 1998

In 1957, the first magnetic disk drive compatible with a movable head was introduced as an external file memory device for computer system. Since then, magnetic disks have been improved by increasing the recording density, which has brought about the development of a high performance thin film magnetic head. The thin film magnetic head has a magnetic circuit on a ceramic substrate using IC technology. The physical property of the substrate material is very important because it influences the tribology of head/disk interface and also manufacturing process of the head. $Al_{2}O_{3}$-TiC ceramics, so called ALTIC, is known to be one of the best substrate materials which satisfies this property requirement. Even though the head is not in direct contact with the disk, frequent instantaneous contacts are unavoidable due to its high rotating speed and the close gap between them. This may cause damage in the magnetic recording media and, thus, it is very important that the magnetic head has a good wear resistance. $Al_{2}O_{3}$-TiC ceramics has an excellent tribological property in head/disk interface. Manufacturing process of thin film head is similar to that of IC, which requires extremely smooth and flat surface of the substrate. The substrate must be readily sliced into the heads without chipping. $Al_{2}O_{3}$-TiC ceramics has excellent machineability and mechanical properties. $Al_{2}O_{3}$-TiC ceramics was first developed at Nippon Tungsten Co. as cutting tool materials in 1968, which was further developed to be used as the substrate materials for thin film head in collaboration with Sumitomo Special Metals Co., Ltd. in 1981. Today, we supply more than 60% of the substrates for thin film head market in the world. In this paper, we would like to present the sintering process of $Al_{2}O_{3}$-TiC ceramics and its property in detail.

• Journal of Powder Materials
• /
• v.23 no.5
• /
• pp.364-371
• /
• 2016

This study investigates the thermal shock property of a polycrystalline diamond compact (PDC) produced by a high-pressure, high-temperature (HPHT) sintering process. Three kinds of PDCs are manufactured by the HPHT sintering process using different particle sizes of the initial diamond powders: $8-16{\mu}m$ ($D50=4.3{\mu}m$), $10-20{\mu}m$ ($D50=6.92{\mu}m$), and $12-22{\mu}m$ ($D50=8.94{\mu}m$). The microstructure observation results for the manufactured PDCs reveal that elemental Co and W are present along the interface of the diamond particles. The fractions of Co and WC in the PDC increase as the initial particle size decreases. The manufactured PDCs are subjected to thermal shock tests at two temperatures of $780^{\circ}C$ and $830^{\circ}C$. The results reveal that the PDC with a smaller particle size of diamond easily produces microscale thermal cracks. This is mainly because of the abundant presence of Co and WC phases along the diamond interface and the easy formation of Co-based (CoO, $Co_3O_4$) and W-based ($WO_2$) oxides in the PDC using smaller diamond particles. The microstructural factors for controlling the thermal shock property of PDC material are also discussed.

• Journal of Adhesion and Interface
• /
• v.21 no.2
• /
• pp.65-70
• /
• 2020

Epoxy adhesive was mainly used to combine different composite materials. Epoxy adhesive was a typical thermosetting resin that can be bonded by changing from a linear structure to a three-dimensional network structure by curing reaction of epoxy and hardener. The curing conditions of epoxy adhesive were different with different types of hardener such as mixing ratio, curing time, and temperature. These curing conditions affected to the adhesive property of epoxy adhesive. In industry, it was difficult to proceed the applying epoxy adhesive and combining two parts immediately. The adhesive property decreased by humidity and pre-curing of epoxy adhesive in waiting time between two processes. In this paper, the glass fiber reinforced composite (GFRC) was combined with epoxy adhesive and adhesion property between epoxy adhesive and GFRCs was evaluated using single lap shear test. The different waiting times and humidity conditions were applied to epoxy adhesive in room temperature and adhesive property decreased as the waiting time increased. In small amount of humidity, the adhesive property increased because a small amount of moisture in the surroundings accelerated the curing reaction. In certain amount of humidity, however, the adhesion property decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.526-530
• /
• 2004

We report the space charge and the surface potential of the interface between metal and CuPc according to isotropic property and different metal by measuring the microwave reflection coefficients $S_{11}$ of copper(II)-phthalocyanine(CuPc) thin films by using a near-field microwave microscope(NSMM) in order to understand. CuPc thin films were prepared on gold and aluminium substrates using a thermal evaporation method. Two kinds of CuPc thin films were prepared. One was deposited on preheated substrate at $150^{\circ}C$ and the other was annealed after deposition by using thermal evaporation methods. The microwave reflection coefficients $S_{11}$ of CuPc thin films were changed by the dependence on the heat treatment conditions. By comparing reflection coefficient $S_{11}$ we measured electrical conductivity of CuPc thin films and studied this results with respect to the surface potential and space charge of the interface between metal and CuPc thin films.

• Transactions of the Korean hydrogen and new energy society
• /
• v.1 no.1
• /
• pp.48-54
• /
• 1989

Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.17 no.7 s.94
• /
• pp.1794-1804
• /
• 1993

The thermal stress intensity factors for interface cracks of Griffith and symmetric lip cusp types under vertical uniform heat flow in a finite body are calculated by boundary element method. The boundary conditions on the crack surfaces are insulated or fixed to constant temperature. The relationship between the stress intensity factors and the displacements on the nodal point of a crack tip element is derived. The numerical values of the thermal stress intensity factors for interface Griffith crack in an infinite body and for symmetric lip cusp crack in a finite and homogeneous body are compared with the previous solutions. The thermal stress intensity factors for symmetric lip cusp interface crack in a finite body are calculated with respect to various effective crack lengths, configuration parameters, material property ratios and the thermal boundary conditions on the crack surfaces. Under the same outer boundary conditions, there are no appreciable differences in the distribution of thermal stress intensity factors with respect to each material properties. But the effect of crack surface thermal boundary conditions on the thermal stress intensity factors is considerable.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.4
• /
• pp.25-29
• /
• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

• Electrical & Electronic Materials
• /
• v.10 no.7
• /
• pp.719-726
• /
• 1997

This research was conducted to analyze the change of surface tension, viscosity, streaming current and conductivity of transformer oil when it were injected with the interface active substances.(anionic:S-111, cationic:S-121, amphoteric:S-131) The changes properties of the surface tension and viscosity of the oil which were injected with the interface active substances were divided into the changes area and the minimum reduction area. The surface tension and viscosity of the oil which were injected with three different kinds of interface active substances showed remarkable change at the point where the concentration of the substance in anionic, in cationic and in amphoteric were 100[ppm], 10[ppm] and 1[ppm] respectively. The streaming current and conductivity of the same sample oil were also changed at the same densities of the surface tension and viscosity. For this factor, it was possibile for us to interpret the mechanism of the streaming current and conductivity. Therefore the interface active substances of the three kinds were injected into the oil within the limit of optimal volume, prevention effects of electrification were showed more excellence than unmixed insulating oil.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.78-81
• /
• 2004

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. Surface structure and adhesion of semiconductive silicon rubber by surface asperity was obtained from SEM and T-peel test. In addition, ac breakdown test was carried out for elucidating the change of electrical property by roughness treatment. From the results, Adhesive strength of semiconductive-insulation interface was increased with surface asperity. Dielectric breakdown strength by surface asperity decreased than initial Specimen, but increased from Sand Paper #1200. According to the adhesional strength data unevenness and void formed on the silicone rubber interface expand the surface area and result in improvement of adhesion. Before treatment Sand Paper #1200, dielectric breakdown strength was decreased by unevenness and void which are causing to have electric field mitigation small. After the treatment, the effect of adhesion increased dielectric breakdown strength. It is found that ac dielectric breakdown strength was increased with improving the adhesion between the semiconductive and insulating interface.