• Smart Media Journal
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• v.1 no.4
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• pp.44-51
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• 2012

A software platform for the next-generation, smart user-interface of mobile devices is described as in this paper. The proposed platform is developed to adapt new devices that may appear in the future through extending the Android platform. Dynamic loading function of software module is developed in order to download and install new software modules for the new devices. Also, platform technology for utilizing external devices to improve quality of service and dynamic switching of wireless interface to reduce power consumption of platform are developed.

• Proceedings of the ESK Conference
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• 1996.04a
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• pp.56-62
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• 1996

The main control room (MCR) of a nuclear power plant plays an important role in the operation of the plant. Since the traditional man-machine interface of the current MCR is old-fashioned, a next-generation MCR, that provides a VDT-based human-computer interface is being designed. This paper aims to provide a systematic and efficient method for converting a traditional man-machine interface of the MCR into a VDT-based one. Procedures and analysis methods are presented for efficient and effective development.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.22 no.49
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• pp.153-161
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• 1999

GUI(Graphic User Interface) have an influence on end-user environments in information system. Consistency is one of the most important GUI characteristics. Consistency should apply across the different media which form the total user interface. User can get a lot of benefits through consistency. To achieve consistency of the total interface, the interface standards are very important. The goals of this study is to suggest GUI's development guidelines through analysis of real fields using ERP package in a electric assembly line. The guidelines fall into four functions: inquiry, registration, modification, deletion. The guidelines can be used for better system development later and as verification tool in GUI development.

• Proceedings of the KIPE Conference
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• 1998.11a
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• pp.68-72
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• 1998

The parameter through the motor designing program is used to predict motor response and design the motor drive circuits. The application programs such as "Saber" are often used for these. However, making the electrical model of motor for these simulation tool is uncomfortable and impossible for general users. Therefore, in this paper, we develop the "Spice" library generation program with the motor designing program "Motor Expert". This program will assist the user to make the motor library comfortablely and correctlyry comfortablely and correctly

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.349-352
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• 2001

As microprocessor and SOC (System On a Chip) performance moves into the GHz speed, the high-speed asynchronous design is becoming challenge due to the disadvantageous power and speed aspects in synchronous designs. The next generation on-chip systems will consist of multiple independently synchronous modules and asynchronous modules for higher performance, so the interface module for data transfer between multiple clocked IPs is designed with Xilinx FPGA and simulated with RISC microprocessor.

• Proceedings of the IEEK Conference
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• 2003.11b
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• pp.251-254
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• 2003

DMB is a next-generation multimedia broadcasting system that not only enables digital broadcasting services such as transmission of CD-duality audio, traffic information, and real-time stock information, but also allows reception of high-quality digital TV in high-speed driving conditions. In the DMB system, MPEG-2 TS(Transport Stream) multiplex method and MPEG-4 System SL(Sync Layer) have been selected as the delivery layer. In this paper, an efficient interface scheme between an MPEG-2 TS processing hardware and software-implemented MPEG-4 system within a DMB terminal device is proposed.

• 한국전산유체공학회:학술대회논문집
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• 2009.11a
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• pp.65-70
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• 2009

In this paper a hybrid grid generation program for general 2-D region is introduced. The program is developed by using JAVA programming language, and it can be used either as an application program on a local computer or as an applet in the network environment. The hybrid grid system for a 2-D problem means a combination of triangular cells and quadrilateral cells, and it can offer both of the high flexibility of triangular cells and the high accuracy and efficiency of structured-type quadrilateral cells. To accommodate a quadrilateral-cell region and a triangular-cell region into one computational domain, it is importance to take good care of the interface between two different regions so that overall good grid quality can be maintained. In this research advancing layer method(ALM) augmented by elliptic smoothing method is used for the quadrilateral-cell region and advancing front method(AFM) is used for the triangular-cell region. A special treatment technique for the interface between those two regions is also developed. The interface treatment technique is basically to prevent the propagation of small cell size due to ALM method into the triangular region and maintain the smooth transition of cell-size scale between two different regions. By applying current technique high-quality hybrid grids for general 2-D regions can be easily generated, and typical grid generation results and flow solutions are demonstrated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.360-369
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• 2012

The causes of showing different subthreshold slopes (SS) in programmed and erased states for two different charge trap flash (CTF) memory devices, SONOS type flash memory with gate-all-around (GAA) structure and TANOS type NAND flash memory with planar structure were investigated. To analyze the difference in SSs, TCAD simulation and low-frequency noise (LFN) measurement were fulfilled. The device simulation was performed to compare SSs considering the gate electric field effect to the channel and to check the localized trapped charge distribution effect in nitride layer while the comparison of noise power spectrum was carried out to inspect the generation of interface traps ($N_{IT}$). When each cell in the measured two memory devices is erased, the normalized LFN power is increased by one order of magnitude, which is attributed to the generation of $N_{IT}$ originated by the movement of hydrogen species ($h^*$) from the interface. As a result, the SS is degraded for the GAA SONOS memory device when erased where the $N_{IT}$ generation is a prominent factor. However, the TANOS memory cell is relatively immune to the SS degradation effect induced by the generated $N_{IT}$.

• The Journal of the Korea Contents Association
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• v.9 no.2
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• pp.152-162
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• 2009

At present, Authoring tools, which are used to develop the WIPI applications are less convenient to be coded. Usually, the programming tools only focus on the grammar while scarcity of visualization. Developer forced directly codes all times during the development by this cause. As a procedure for rapid WIPI Application Development, in this paper, WIPI API High Level Component is first visualized, in order words, graphic control is developed. Second this control is used in designing the mobile layout. Then UI Markup Language and source code can be generated automatically. With this view, we propose the JIML(Jlet Interface Markup Language) with UI Markup Language based XML of WIPI Jlet Platform and also present the transformable rule for generation to the WIPI code about WIPI Jlet UI from offered JIML. Also we implement the WIPI Jlet Generation System to make the generation to JIML, WIPI code. The Implemented System provides efficiency when developing WIPI Business Application, and helps to enable rapid development.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.13-18
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• 2007

This paper presents the experimental findings on the different degradation mechanism which depends on the gate oxide thickness in lateral DMOS transistors. For thin oxide devices, the generation of interface states in the channel region and the trapped holes in the drift region is found to be the causes of the device degradation. For thick devices, the generation of interface states in the channel region is found to be the causes of the device degradation. We confirmed the different degradation mechanism using device simulation. From the comparison of device degradation under DC and AC stress, it is found that the device degradation is more significant under DC stress than one under AC stress. The device degradation under AC stress is more significant in high frequency. Therefore the hot carrier induced degradation should be more carefully considered in the design of RF LDMOS transistors and circuit design.