• Journal of the Korean Society for Precision Engineering
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• v.19 no.5
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• pp.43-50
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• 2002

Friction welding has many merits such as energy efficiency, simple processing, etc butt difficult to obtain good weld at the welded interface and heat affected zone. To date, the continuum mechanics and fracture mechanics are utilized to analyse stresses at the interface and propagation of cracks. In this study. STS304 and SM15C are selected because they can be differentiated distinctively from metallic point of view and crack can be observed easily. It is ovserved during friction welding that STS304, rotary part is hatter than SH15C, fixed part. The last fracture occurs around the center because the surface of fatigue fracture has smooth regions, due to the separation phenomenon in plastic flows layers and striation dimple pattern.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.25-30
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• 2001

The stress intensity factors for edge cracks located at the bonding interface between the semiconductor chip and the adhesive layer subjected to a uniform transverse tensile strain are investigated. Such cracks might be generated due to a stress singularity in the vicinity of the free surface. The boundary element method (BEM) is employed to investigate the behavior of interface stresses. The amplitude of complex stress intensity factor depends on the crack length, but it has a constant value at large crack lengths. The rapid propagation of interface crack is expected if the transverse tensile strain reaches a critical value.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.14 no.3
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• pp.309-315
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• 2001

The Stress intensity factors for edge cracks located at the bonding interface between the elastic semiconductor chip and the viscoelastic adhesive layer have been investigated. Such cracks might be generated due to stress singularity in the vicinity of the free surface. The domain boundary element method(BEM) has been employed to investigate the behavior of interface stresses. The overall stress intensity factor for the case of a small interfacial edge crack has been computed. The magnitude of stress intensity factors decrease with time due to viscoelastic relaxation.

• Journal of Adhesion and Interface
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• v.7 no.4
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• pp.28-31
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• 2006

Due to the miniaturization of MEMS and microelectronics the joining techniques also have to be adjusted. The dosing technology with viscous adhesives does not permit reproducible adhesive volumes, which are clearly under a nano-liter. A nano-liter means however a diameter of bonding area within the range of several 100 micrometers. Additional, viscous adhesives need a certain time, until they are cross linked or cured. The problem especially in the MEMS is the initial strength, since it gives the time, which is needed for joining an individual adhesive joint. The time up to the initial strength is with viscous, also with fast curing systems, within the range of seconds until minutes. Until the reach of the initial strength, the micro part must be fixed/held. Without sufficient adjustment/clamping it can come to a shift of the micro parts. Also existing micro adhesive bonding processes are not batch able, i.e. the individual adhesive joints of a micro system must be processed successively. In the context of the WCARP III 2006 now an innovative method is to be presented, how it is possible to solve the existing problems with micro bonding. i.e. a method is presented, which is batch able, possess a minimum joining geometry with some micrometers and is so fast that no problems with the initial strength arise. It is a method, which could revolutionize the sticking technology in the micro system engineering.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.776-780
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• 2002

This paper describes the concept and the characteristics of hyper interfacial bonding developed as a new concept joining process for UFG (ultra-fine grained) steel. Hyper interfacial bonding process is characterized by instantaneous surface melting bonding which involves a series of steps, namely, surface heating by high frequency induction, the rapid removing of heating coil and joining by pressing specimens. UFG steels used in this study have the average grain size of 1.25 ${\mu}{\textrm}{m}$. The surface of specimen can be rapidly heated up and melted within 0.2s. Temperature gradient near heated surface is relatively steep, and peak temperature drastically fell down to about 1100K at the depth of 2~3mm away from the heated surface of specimen. Bainite is observed near bond interface, and also M-A (martensite-austenite) islands are observed in HAZ. Grain size increases with increasing heating power, however, the grain size in bonded zone can be restrained under 11 ${\mu}{\textrm}{m}$. Hardened zone is limited to near bond interface, and the maximum hardness is Hv350~Hv390.

• Journal of Welding and Joining
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• v.20 no.6
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• pp.106-106
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• 2002

This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and Ti₃Ag and titanium oxide, TiO₂were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of 900℃ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about 30㎛, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

• Journal of Welding and Joining
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• v.20 no.6
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• pp.830-837
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• 2002

This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and $Ti_3Ag$ and titanium oxide, $TiO_2$ were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of $900^{\circ}C$ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about $30\mu\textrm{m}$, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.447-450
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• 2001

Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.672-675
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• 1999

Si-to-Si electrostatic bonding was carried out by employing LSG interlayer instead of conventional Corning #7740 interlayer in order to improve bonding properties. The surface roughness and dielectric breakdown field of the LSG interlayers deposited on Si substrates were investigated. Also, the bonding interface, bonding strength and bonding mechanism were discussed for the electrostatically-bonded Si-Si wafer pairs having LSG interlayers.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.191-196
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• 1995

Self-bonding strength developed at the interface of amorphous PEEK films is highly sensitive to the processing variables(time, temperature, and pressure) during the bonding process. In order to examine the effects of these processing variables, amorphous PEEK films were bonded at various bonding conditions and the resultant interfacial bond strengths were measured using a modified single lap-shear test. Experimental results showed that the developed self-bonding strength increases with increase in bonding temperature and is directly proportional to the bonding time raised to the 1/4 power. The applied pressure seems only to produce better wetting at the beginning stage of the bonding process. Conclusively, the self-bonding of amorphous PEEK films provides a great potential for developing excellent bond strength approaching the strength of the parent material without any adhesives in structural applications.