• Electrical & Electronic Materials
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• v.8 no.5
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• pp.619-625
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• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.659-662
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• 2012

Yttrium (Y) and niobium (Nb) doped spherical $Li_4Ti_5O_{12}$ were synthesized to improve the energy density and electrochemical properties of anode material. The synthesized crystal was $Li_4Ti_5O_{12}$, the particle size was less than $1{\mu}m$ and the morphology was spherical and well dispersed. The Y and Nb optimal doping amounts were 1 mol% and 0.5 mol%, respectively. The initial capacity of the dopant discharge and charge capacity were respectively 149mAh/g and 143 mAh/g and were significantly improved compared to the undoped condition at 129 mAh/g. Also, the capacity retention of 0.2 C/5 C was 74% for each was improved to 94% and 89%. It was consequently found that Y and Nb doping into the $Li_4Ti_5O_{12}$ matrix reduces the polarization and resistance of the solid electrolyte interface (SEI) layer during the electrochemical reaction.

• Journal of Surface Science and Engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.191-191
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• 2007

유효 산화막 두께가 약 2.0nm 정도의 $ZrO_2$ 절연막 위에 Ta-Mo 금속 합금과 Ru-Zr 금속 합금을 Co-sputtering 방법을 이용하여 여러 가지 일함수를 갖는 MOS capacitor를 제작하여 전기적 재료적 특성에 관하여 연구를 하였다. 그 결과 각각의 금속 합금 게이트는 4.1eV 에서 5.1eV 사이의 다양한 일함수를 나타냈으며, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$ RTA 후의 C-V특성 곡선 및 I-V 측정을 통하여 누설전류를 확인하였다. 그 결과 Ta-Mo 금속 합금의 경우 스퍼터링 파워가 100W/70W에서 NMOS에 적합한 일함수를 가졌으며, Ru-Zr 금속 합금의 경우 스퍼터링 파워가 50W/100W에서 NMOS에 적합한 일함수를 가졌다. 열처리 후의 C-V특성 곡선에서도 정전용랑 값이 거의 변하지 않았으며 평탄 전압의 변화도 거의 없었다. 누설전류 특성에서는 물리적 두께가 비슷한 기존의 $SiO_2$ 절연막에서 실험결과와 비교하여 약 100배 정도 감소되었음을 알 수 있었다. 또한 기존의 실험들에서 나타난 열처리 후의 $ZrO_2$ 절연막과 Si 기판 사이의 Interfacial layer 의 동반 두께 증가로 인한 전기적 특성 저하가 나타나지 않는 줄은 특성을 보여준다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9B
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• pp.1527-1533
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• 2000

Basically, a general characterization procedure based on the extraction of the characteristic impedance and propagation constant for analyzing a single MIS(Metal-Insulator-Semiconductor) transmission line is used. In this paper, an analysis for a new substrate shielding MIS structure consisting of grounded cross-bars at the interface between Si and SiO2 layer using the Finite-Difference Time-Domain (FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded cross bar lines over time-domain signal has been examined. The extracted distributed frequency-dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor have been examined as functions of cross-bar spacing and frequency. It is shown that the quality factor of the transmission line can be improved without significant change in the characteristic impedance and effectve dielectric constant.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Journal of Welding and Joining
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• v.1 no.2
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• pp.45-52
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• 1983

Many pressure vessels for the hot H$\sub$2//H$\sub$2/S service are made of 2+1/4Cr-1Mo steel with austenitic stainless steel overlay to combat agressive corrosion due to hydrogen sulfide. Hydrogen dissolves in to materials during operation, and sometimes gives rise to unfore-seeable damages. Appropriate precautions must, therefore, be taken to avoid the hydrogen induced damages in the design, fabrication and operation stage of such reactor vessels. Recently, hydrogeninduced cracking (or Disbonding) was found at the interface between base metal and stainless weld overlay of a desulfurizing reactor. Since the stainless steel overlay weld metal is subjected to thermal and internal-pressure loads in reactor operation, it is desirable for the overlay weld metal to have high strength and ductility from the stand point of structural safety. In section III of ASME Boiler and Pressure Vessel Code, Post-Weld Heat Treatment(PWHT) of more than one hour per inch at over 1100.deg. F(593.deg. C) is required for the weld joints of low alloy pressure vessel steels. This heat treatment to relieve stresses in the welded joint during construction of the pressure vessel is considered to cause sensitization of the overlay weld metal. The present study was carried out to make clear the diffusion of carbon migration by PWHT in dissimilar metal welded joint. The main conclusion reached from this study are as follows: 1) The theoretical analysis for diffusion of carbon in stainless steel overlay weld metal does not agree with Fick's 2nd law but the general law of molecular diffusion phenomenon by thermodynamic chemical potential. 2) In the stainless steel overlay welded joint, the PWHT at 720.deg. C for 10 hours causes a diffusion of carbon atoms from ferritic steel into austenitic steel according to the theoretical analysis for carbon migration and its experiment. 3) In case of PWHT at 720.deg. C for 10 hours, the micro-hardness of stainless steel weld metal in bonded zone increase very highly in the carburized layer with remarkable hardening than that of weld metal.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.629-632
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• 2006

Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as $2.3{\times}10^{-6}{\Omega}{\cdot}cm^2$, when heat-treated at an annealing temperature of $400^{\circ}C$. Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as $4.7{\times}10^{-6}{\Omega}{\cdot}cm^2$ was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.310-315
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• 1993

The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.399-402
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• 2004

In the optical drive system, adopting the optical flying-type head (OFH) flying on a removable plastic disk, the flying stability of the small OFH should be carefully considered to ensure the reliability for first surface recording. Additional micro actuators for focus servo are discussed for better interface of optical flying head on thin cover layered plastic disk to eliminate focus error due to the non-uniformity of cover layer thickness and the tolerance of lens assembly. This study gives two simulation results on the flying stability of the OFH. One is the dependence of the flying height and pitch angle variations on the wavelength and amplitude of disk waviness. The other is the flying stability of the slider and suspension system during the dynamic load/unload (U/UL) process.