The Journal of Korean Institute of Communications and Information Sciences (한국통신학회논문지)

The Korean Institute of Commucations and Information Sciences (한국통신학회)
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Analysis of a transmission line on Si-based lossy structure using Finite-Difference Time-Domain(FDTD) method

손실있는 실리콘 반도체위에 제작된 전송선로의 유한차분법을 이용한 해석

  • 김윤석 (공군사관학교 전자공학과)
  • Published : 2000.09.01
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Abstract

Basically, a general characterization procedure based on the extraction of the characteristic impedance and propagation constant for analyzing a single MIS(Metal-Insulator-Semiconductor) transmission line is used. In this paper, an analysis for a new substrate shielding MIS structure consisting of grounded cross-bars at the interface between Si and SiO2 layer using the Finite-Difference Time-Domain (FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded cross bar lines over time-domain signal has been examined. The extracted distributed frequency-dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor have been examined as functions of cross-bar spacing and frequency. It is shown that the quality factor of the transmission line can be improved without significant change in the characteristic impedance and effectve dielectric constant.

MIS(도체-부도체-반도체) 구조로된 전송선로를 해석하기 위하여 기본적으로 특성임피던스와 전파상수의 추출에 기초한 일반적인 특성화 절차가 사용된다. 본논문에서는 Si와 Si02층 사이에 0전위를 가진 도체를 일정한 간격의 주기적인 배열로 고안된 새로운 모델의 MIS구조에 대한 유한차분법을 이용한 해석방법을 제안한다. 특히 전송선로에 대한 유전체의 영향을 줄이기 위하여 0전위를 가진 주기적인 결합의 도체로 이루어진 구조가 시간영역의 신호를 통해 시험된다. Quality factor 뿐만아니라 주파수 의존적인 추출된 전송선로 파라미터와 등가회로 파라미터가 주파수 및 0전위 도체 간격의 함수로서 나타내진다. 특히 전송선로의 Quality factor가 특성임피던스 및 유효유전 상수의 큰 변화없이 개선될수 있음을 볼 수 있다.

Keywords

References

  1. IEEE Trans. MTT v.15 A parallel-plate waveguide approach to micro-miniaturized, planar transmission lines for integrated circuits H. Guckel;I. Palocz
  2. IEEE Trans. MTT v.19 Properties of microstrip line on Si-SiO2 system H. Hasegawa;H. Yanai
  3. IEEE Trans. MTT v.33 A simple network analog approach for the quais-static characteristics of general lossy, anisotropic, layered structures V. Tripathi;R. Bucolo
  4. IEEE Trans. MTT v.44 Modal circuit decomposition of lossy multiconductor transmission lines M. Abushaaban;S. Scanlan
  5. IEEE Trans. MTT v.32 Analysis of crosstalk in very high-speed LSI/VLSI's using a coupled multiconductor MIS microstrip line model S. Seki;H. Hasegawa
  6. IEEE Trans. MTT v.32 Analysis of inter-connection delay on very high speed LSI/VLSI chips using an MIS microstrip line model H. Hasegawa;S. Seki
  7. IEEE Trans. MTT v.37 Modeling of multiconductor buses and analysis of crosstalk, propagation delay, and pulse distortion in high-speed GaAs logic circuits G. Ghione;G. Vecchi
  8. IEEE Trans. MTT v.37 Pulse distortion on multilayer coupled microstrip lines J. Gilb;C. Balanis
  9. IEEE Trans. MTT v.38 Transient analysis of distortion and coupling in lossy coupled microstrips J. Gilb;C. Balanis
  10. IEEE Trans. MTT v.39 Asymmetric multiconductor low-coupling structures for high-speed, high-density digital interconnects J. Gilb;C. Balanis
  11. Proceedings of the IEEE v.136 Modeling of crosstalk among the GaAs-based VLSI interconnections A. Goel;Y. Huang
  12. IEEE Trans. ED v.34 Analysis and modeling of multilevel parallel and crossing interconnection lines V. Tripathi;R. Bucolo
  13. IEEE Trans. MTT v.36 The propagation characteristics of signal lines embedded in a multilayered structure in the presence of a periodically perforated ground plane C. Chan;R. Mittra
  14. IEEE Proc. Micro. Antennas and Prop. v.146 Extraction of multiple coupled line parameters using FDTD simulation Y. Kim;V.K. Tripathi