• 제목/요약/키워드: Interface Bonding

검색결과 716건 처리시간 0.021초

이종마찰 접합계면부의 소성유동 방향성 및 강도 평가 (Plastic Flow Direction and Strength Evaluation of Dissimilar Fiction Bonding Interface Joints)

  • 오정국;성백섭
    • 한국정밀공학회지
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    • 제19권5호
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    • pp.43-50
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    • 2002
  • Friction welding has many merits such as energy efficiency, simple processing, etc butt difficult to obtain good weld at the welded interface and heat affected zone. To date, the continuum mechanics and fracture mechanics are utilized to analyse stresses at the interface and propagation of cracks. In this study. STS304 and SM15C are selected because they can be differentiated distinctively from metallic point of view and crack can be observed easily. It is ovserved during friction welding that STS304, rotary part is hatter than SH15C, fixed part. The last fracture occurs around the center because the surface of fatigue fracture has smooth regions, due to the separation phenomenon in plastic flows layers and striation dimple pattern.

반도체 칩 접착계면의 모서리 균열에 대한 경계요소 해석 (Boundary Element Analysis for Edge Cracks at the Bonding Interface of Semiconductor Chip)

  • 이상순
    • 마이크로전자및패키징학회지
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    • 제8권3호
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    • pp.25-30
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    • 2001
  • 반도체 칩과 얇은 접착제충의 계면에 존재하는 모서리 균열에 횡방향 인장변형률이 작용하는 경우에 대해 응력확대계수를 조사하고 있다. 이러한 균열들은 자유 경계면 부근에 존재하는 응력 특이성으로 인해 발생할 수 있다. 계면 응력상태를 해석하기 위해서 경계요소법이 사용되고 있다. 복합 응력확대계수의 크기는 균열의 크기에 의존하지만, 균열이 커지면 일정한 값에 수렴한다. 횡방향 인장변형률이 임계값에 도달하면, 계면 균열은 빠르게 전파되리라고 예상된다.

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반도체 칩 접착 계면에 존재하는 모서리 균열 거동에 대한 점탄성 해석 (Viscoelastic Analysis for Behavior of Edge Cracks at the Bonding Interface of Semiconductor Chip)

  • 이상순
    • 한국전산구조공학회논문집
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    • 제14권3호
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    • pp.309-315
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    • 2001
  • 탄성 반도체 칩과 점탄성 접착제층의 계면에 존재하는 모서리 균열에 대한 응력확대계수를 조사하였다. 이러한 균열들은 자유 경계면 부근에 존재하는 응력 특이성으로 인해 발생할 수 있다. 계면 응력상태를 해석하기 위해서 시간 영역 경계요소법이 사용되었다. 작은 크기의 모서리 균열에 대한 응력확대계수가 계산되었다. 점탄성 이완으로 인해 응력확대계수의 크기는 시간이 경과함에 따라 작아진다.

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Micro Bonding Using Hot Melt Adhesives

  • Bohm, Stefan;Hemken, Gregor;Stammen, Elisabeth;Dilger, Klaus
    • 접착 및 계면
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    • 제7권4호
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    • pp.28-31
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    • 2006
  • Due to the miniaturization of MEMS and microelectronics the joining techniques also have to be adjusted. The dosing technology with viscous adhesives does not permit reproducible adhesive volumes, which are clearly under a nano-liter. A nano-liter means however a diameter of bonding area within the range of several 100 micrometers. Additional, viscous adhesives need a certain time, until they are cross linked or cured. The problem especially in the MEMS is the initial strength, since it gives the time, which is needed for joining an individual adhesive joint. The time up to the initial strength is with viscous, also with fast curing systems, within the range of seconds until minutes. Until the reach of the initial strength, the micro part must be fixed/held. Without sufficient adjustment/clamping it can come to a shift of the micro parts. Also existing micro adhesive bonding processes are not batch able, i.e. the individual adhesive joints of a micro system must be processed successively. In the context of the WCARP III 2006 now an innovative method is to be presented, how it is possible to solve the existing problems with micro bonding. i.e. a method is presented, which is batch able, possess a minimum joining geometry with some micrometers and is so fast that no problems with the initial strength arise. It is a method, which could revolutionize the sticking technology in the micro system engineering.

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DEVELOPMENT OF HYPER INTERFACIAL BONDING TECHNIQUE FOR ULTRA-FONE GRAINED STEELS

  • Kazutoshi Nishimoto;Kazuyoshi Saida;Jeong, Bo-young;Kohriyama, Shin-ichi
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.776-780
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    • 2002
  • This paper describes the concept and the characteristics of hyper interfacial bonding developed as a new concept joining process for UFG (ultra-fine grained) steel. Hyper interfacial bonding process is characterized by instantaneous surface melting bonding which involves a series of steps, namely, surface heating by high frequency induction, the rapid removing of heating coil and joining by pressing specimens. UFG steels used in this study have the average grain size of 1.25 ${\mu}{\textrm}{m}$. The surface of specimen can be rapidly heated up and melted within 0.2s. Temperature gradient near heated surface is relatively steep, and peak temperature drastically fell down to about 1100K at the depth of 2~3mm away from the heated surface of specimen. Bainite is observed near bond interface, and also M-A (martensite-austenite) islands are observed in HAZ. Grain size increases with increasing heating power, however, the grain size in bonded zone can be restrained under 11 ${\mu}{\textrm}{m}$. Hardened zone is limited to near bond interface, and the maximum hardness is Hv350~Hv390.

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브레이징을 이용한 Ti/STS321L 접합체의 미세조직과 기계적 특성의 변화 (Variations of Micro-Structures and Mechanical Properties of Ti/STS321L Joint Using Brazing Method)

  • 구자명;정우주;한범석;권상철;정승부
    • Journal of Welding and Joining
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    • 제20권6호
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    • pp.106-106
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    • 2002
  • This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and Ti₃Ag and titanium oxide, TiO₂were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of 900℃ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about 30㎛, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

브레이징을 이용한 Ti/STS321L 접합체의 미세조직과 기계적 특성의 변화 (Variations of Micro-Structures and Mechanical Properties of Ti/STS321L Joint Using Brazing Method)

  • 구자명;정우주;한범석;권상철;정승부
    • Journal of Welding and Joining
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    • 제20권6호
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    • pp.830-837
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    • 2002
  • This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and $Ti_3Ag$ and titanium oxide, $TiO_2$ were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of $900^{\circ}C$ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about $30\mu\textrm{m}$, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

큰 초기접합력을 갖는 Si기판 직접접합에 관한 연구 (A Study on Si-wafer direct bonding for high pre-bonding strength)

  • 정연식;김재민;류지구;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.447-450
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    • 2001
  • Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

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LSG Interlayer를 이용한 실리콘-실리콘 정전 열 접합 (Si-to-Si Electrostatic Bonding using LSG Film as an Interlayer)

  • 주병권;정지원;이덕중;이윤희;최두진;오명환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권9호
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    • pp.672-675
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    • 1999
  • Si-to-Si electrostatic bonding was carried out by employing LSG interlayer instead of conventional Corning #7740 interlayer in order to improve bonding properties. The surface roughness and dielectric breakdown field of the LSG interlayers deposited on Si substrates were investigated. Also, the bonding interface, bonding strength and bonding mechanism were discussed for the electrostatically-bonded Si-Si wafer pairs having LSG interlayers.

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비정질 PEEK 필름의 Self-Bonding강도에 미치는 제조공정변수의 영향 (The Effect of Processing Variables on Self-Bonding Strength in Amorphous PEEK Films)

  • 조범래
    • 한국재료학회지
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    • 제5권2호
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    • pp.191-196
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    • 1995
  • 비정질 PEEK 필름의 self-bonding강도는 접합시의 공정변수(시간, 온도, 그리고 압력)와 밀접한 관계가 있다. 본 연구에서는 이러한 공정변수의 효과를 규명하기 위하여 각기 다른 접합조건하에서 개발된 시편들의 self-bonding강도를 single lap-shear test를 통하여 측정된 각각의 전단 응력(shear strength)으로 나타내었다. 개발된 self-bonding강도는 접합온도가 증가함에 따라 증가하였으며, 접합시간의 1/4승에 일차함수적으로 비례증가하였다. 접합공정 중의 압력의 효과는 단지 초기 접합단계인 wetting에 기여하였을 뿐 self-bonding강도 자체에는 거의 영향을 미치지 않는 것으로 사려되었다. 결론적으로 비정질 PEEK 필름의 self-bonding현상은 현장에서의 실제 접합공정에서 어떠한 접착재료의 사용없이도 모재와 같은 강도를 개발하는데 무한한 가능성이 있는 것으로 판단되었다.

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