• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.130-133
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• 2004

The characterization of interdigitated capacitors was investigated. The test structures are manufactured by low temperature co-fired ceramic(LTCC) process and their s-parameters were measured. The optimized equivalent circuit models for test structures were obtained using the partial element equivalent circuit(PEEC) method. Predictive modeling was performed on different test structures using optimized parameters to verify the circuit models. From this result, the manufacturability on the process can be improved through the predictive modeling for the characteristics of interdigitated capacitors.

• ETRI Journal
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• 제28권2호
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• pp.182-190
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• 2006

The circuit modeling of interdigitated capacitors fabricated by high-k low-temperature co-fired ceramic (LTCC) sheets was investigated. The s-parameters of each test structure were measured from 50 MHz to 10 GHz, and the modeling was performed using these measured sparameters up to the first resonant frequency. Each test structure was divided into appropriate building blocks. The equivalent circuit of each building block was composed based on the partial element equivalent circuit (PEEC) method. Modeling was executed to optimize the parameters in the equivalent circuit of each building block. The validity of the extracted parameters was verified by the predictive modeling for the test structures with different geometry. After that, Monte Carlo analysis and sensitivity analysis were performed based on the extracted parameters. The modeling methodology can allow a device designer to improve the yield and to save time and cost for the design and manufacturing of devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.616-619
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• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.38-39
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• 2006

In this paper, we describe a method of accurate modeling capacitor in Low Temperature Co-fired Ceramic(LTCC). We obtain building blocks that present characterization of test structure through partial element equivalent circuit (PEEC) method. The extracted model of building blocks can be used for predicting behaviors of capacitors with different geometries. This method can provide the good inspection of capacitor to device engineer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.