• Journal of Sensor Science and Technology
• /
• v.4 no.2
• /
• pp.45-50
• /
• 1995

The excellent c-axis oriented zinc oxide thin films were prepared by the RF magnetron sputtering method on glass substrates. Optimum fabrication conditions of the ZnO films were such that RF power, substrate temperature, and gas pressure of mixture Ar(50%):$O_{2}$(50%) were 150 W, $200^{\circ}C$, and 5 mTorr, respectively. In these conditions, the deposition rate was $310\;{\AA}/min$, and the resistivity of the film was $1{\times}10^6\;{\Omega}{\cdot}cm$. The ZnO film also showed high c-axis orientation and crystalinity according to XRD pattern and SEM photograph. A fabricated interdigital transducer generated 1st mode surface acoustic wave at 46.6 MHz and 2nd mode surface acoustic wave at 52.5 MHz. At the 1st mode, the phase velocity of surface acoustic wave and the electromechanical coupling coefficient were 2795 m/sec and 0.031 %, respectivly. At the 2nd mode, they were 3149 m/sec and 0.019 %. respectivly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.13-16
• /
• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.12 no.1
• /
• pp.106-113
• /
• 2009

This paper presents a surface acoustic wave(SAW) micro-electro-mechanical-systems(MEMS) interdigital transducer (IDT) gyroscope with 80MHz central frequency on a $128^{\circ}\;YX\;LiNbO_3$, which is consisted of a two-port SAW resonator, metallic dots and dual delay lines for the sensor and reference oscillators. Reason for using two delay line oscillators is to extract the gyroscope effect by comparing the resonant frequencies between two oscillators and to compensate the temperature effect. Based on the coupling of modes(COM) simulation, an 80MHz two ports SAW resonator and dual delay line were fabricated and characterized by the network analyzer. Obtained sensitivity was $109Hz/deg{\cdot}s^{-1}$ in the angular rate range of $0{\sim}1000deg/s$. Good Linearity and superior directivity were observed.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.7
• /
• pp.288-292
• /
• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.1898-1899
• /
• 2005

반도체 집적회로 공정에서 사용되는 폴리이미드 포토레지스트(P12723, Dupont)를 감습막으로 사용하는 마이크로 습도센서 소자를 제작하였다. 마이크로 습도센서는 실리콘 웨이퍼 기판 위에 $SiO_2$ 박막을 건식열산화 공정으로 제작하고, Al 박막을 포토리소그라피 공정으로 패터닝 한 IDT (Interdigital Transducer)를 전극 위에 폴리이미드 포토레지스트를 공정변수를 다양하게 조절하면서 감습막으로 제작하였다. 폴리이미드 감습막은 스핀코팅법으로 제작하였으며, 회전수를 조절하여 두께를 변화시켰다. 완성된 마이크로 습도센서 소자의 상대습도 변화$(10{\sim}90% RH)$에 따른 정전용량 값 변화를 항온항습조 내에서 다양한 온도에서 HP4192A Impedance Analyzer를 사용하여 조사함으로써, 폴리이미드 포토레지스트를 사용하는 마이크로 정전용량형 습도센서의 제작 가능성을 검토하였다. 폴리이미드 정전용량형 마이크로 습도센서는 다양한 인가 전원 주파수에서 기준 센서로 사용된 상용 Vaisala Hygrometer와 유사한 감습특성 및 응답특성을 보였다.

• Korean Journal of Materials Research
• /
• v.12 no.7
• /
• pp.522-527
• /
• 2002

To investigate the SAW properties of GaN films on c-plane sapphire substrates, we carried out both the experimental measuring and theoretical calculation. The experimental characterization of SAW propagation properties was performed with a linear array of interdigital transducer (IDT) structures, while SAW velocities were calculated by matrix methods. HVPSAW mode with the propagation velocity over 10,000m/s and PSAW mode as well as GSAW could be observed in experimental determination. These results were verified by matching with the theoretical calculation.

• Journal of the Korean Society of Visualization
• /
• v.20 no.3
• /
• pp.19-26
• /
• 2022

In droplet microfluidics, precise droplet manipulation is required in numerous applications. This study presents ultrasonic surface acoustic wave (USAW)-based microfluidic device for label-free droplet separation based on size. The proposed device is composed of a slanted-finger interdigital transducer on a piezoelectric substrate and a polydimethylsiloxane microchannel placed on the substrate. The microchannel is aligned in the cross-type configuration where the USAWs propagate in a perpendicular direction to the flow in the microchannel. When droplets are exposed to an acoustic field, they experience the USAW-induced acoustic radiation force (ARF), whose magnitude varies depending on the droplet size. We modeled the USAW-induced ARF based on ray acoustics and conducted a series of experiments to separate different-sized droplets. We found that the experimental results were in good agreement with the theoretical estimation. We believe that the proposed method will serve as a promising tool for size-based droplet separation in a label-free manner.

• The Journal of the Acoustical Society of Korea
• /
• v.19 no.2
• /
• pp.33-39
• /
• 2000

We have studied to obtain the frequency characteristics of the Surface Acoustic Wave(SAW) bandpass filter, having low shape factor, it's interdigital transducer(IDT) was formed on the 35° Y-cut X-propagation Quartz substrate and was evaporated by Aluminium. And then, we performed computer-simulation by a simulator. And, we can design that the apodization weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulation. Also, we have employed that the number of pairs of the input and output IDT are 2200 pairs and 1000pairs, respectively and used the Kaiser-Bessel window function in order to minimize the effect of ripple. And, while the width and the space of IDT's finger are 6㎛ m and 5.75㎛, respectively and we could obtain the resonable results when the IDT thickness was 6000Å in consideration of the ratio of SAW's wavelength, and IDT aperture is 2mm. Frequency response of the fabricated SAW bandpass filter has the property that the center frequency is about 70MHz, shape factor is less than 1.3, bandwidth at the 1.5dB is probably 1.3MHz, out-band attenuation is almost -45dB, insertion loss is 19dB and ripple in the width of bandpass is 1dB approximately. Therefore, these frequency characteristics of the fabricated SAW bandpass filter are agreed well with the designed values.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.14 no.4
• /
• pp.237-243
• /
• 1995

We have studied methods of detecting attenuation of solid materials such as silicon wafer and piezoelectric $LiTaO_3$ by means of optical probing techniques. We have performed measurements of surface acoustic waves(SAW) generated from 90 degree wedge type transducer and also from inter-digital transducers(IDT). SAW of 20.0 MHz was generated on a silicon wafer from the 90 degree wedge type transducer and those of 20.8 and 14.5 MHz are generated on a $LiTaO_3$ from the IDT. Then any surface-corrugation resulted from the above SAW was investigated by He-Ne laser beams. We projected laser beams, which were modulated by an optical chopper, on the SAW of the same frequency and then measured the scattered beam by the lock-in amplifier. We modulated and synchronized both SAW and the incident laser beam as well as the phase sensitive detector(PSD) to the same frequency in order to simplify our measurement system. We obtained the attenuation coefficients of SAW to be $0.62{\sim}0.75dB/mm$(from IDT1, 20.8 MHz), and $0.60{\sim}0.72dB/mm$(from IDT2, 14.5 MHz), $0.83{\sim}1.28dB/mm$(from the wedge type), respectively.

• The Journal of the Acoustical Society of Korea
• /
• v.18 no.1
• /
• pp.10-15
• /
• 1999

We have studied a method to design and fabricate the Intermediate Frequency(IF) band pass filter with low shape factor which is used for CDMA base station on the 35°Y-cut X-propagation Quartz substrate. In order to fabricate a device of the low shape factor for the IF SAW filter on this substrate, we employed apodization weighted type interdigital transducer(IDT) as an input and withdrawal weighted type IDT as an output by using impulse modelling method. Also, using the Kaiser-Bessel window function, we have adopted 2200pairs and 1000pairs of input and oueut IDT respectively to minimize the effect of ripple. Furthermore, the width and the space of IDT finger are 3.6 ㎛ and 3.5 ㎛ respectively. Thus, we can have optimal results when the IDT thickness is 6000Å in consideration of the ratio of SAW's wavelength while it's aperture is 2mm for impedance matching. The fabricated SAW filter for CDMA had the property of almost 115.2MHz of a center frequency, less then 1.27MHz of bandwidth, less than 1.3 of shape factor, - l5dB of out band attenuation insertion loss and -45dB of rejection band.