Browse > Article
http://dx.doi.org/10.3740/MRSK.2002.12.7.522

SAW Propagation Properties of GaN/Sapphire Structure  

Choi, Kook-Hyun (School of Materials Science and Engineering, Seoul National University)
Kim, Jin-Yong (Film Characterization and Properties Group Ceramics Division, NIST, Gaithersburg, USA)
Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University)
Chung, Su-Jin (School of Materials Science and Engineering, Seoul National University)
Lee, Tae-Kun (Department of Materials Science and Engineering, Seoul National University of Technology)
Kim, Young-Jin (Department of Materials Science and Engineering, Kyonggi University)
Publication Information
Korean Journal of Materials Research / v.12, no.7, 2002 , pp. 522-527 More about this Journal
Abstract
To investigate the SAW properties of GaN films on c-plane sapphire substrates, we carried out both the experimental measuring and theoretical calculation. The experimental characterization of SAW propagation properties was performed with a linear array of interdigital transducer (IDT) structures, while SAW velocities were calculated by matrix methods. HVPSAW mode with the propagation velocity over 10,000m/s and PSAW mode as well as GSAW could be observed in experimental determination. These results were verified by matching with the theoretical calculation.
Keywords
GaN; SAW; Piezoelectricity; HVPSAW; PSAW;
Citations & Related Records
연도 인용수 순위
  • Reference
1 G.W. Farnell and E.L. Adler, 'Elastic Wave Propagation in Thin Layers', edited by R.N.Thurston and W.P. Mason in Physical Acoustics, Volume IX(Academic, New York, 1972), pp.35-127
2 E.L. Adler et al., 'PC Software for SAW Propagation in Anisotropic Multilayers,' IEEE Ultrason, Ferr. and Freq., vol.37, no.2, pp.215-222   DOI   ScienceOn
3 A. Polian, M. Grimditch, I. Grzegory, J. Appl. Phys., 79, 3343(1996)   DOI
4 R.M.White, 'Surface Elastic Wave,' Proc IEEE, 58(8), 1238(1970)   DOI   ScienceOn
5 S. Makarov, E. Chilla, and H.J. Frohlich, 78(8), 5028(1995)   DOI   ScienceOn
6 K. Kim, W.R.L. Lambrecht, and B. Segall, Phys. Rev. B 53, 7018 (1997)
7 A.F.Wright, J. Appl. Phys., 82, 2833 (1997)   DOI   ScienceOn
8 K.Shimada, T.Sato, and K.Suzuki, J. Appl. Phys., 84, 4951 (1998)   DOI   ScienceOn
9 H.Nakahata, K.Higaki, A.Hachico, S.Shikata, N.Fujimori, Y.Takahashi, T.Kajihara, and Y.Yamamoto, Jpn. J. Appl. Physic. Pt. 1, 33(1A), 324(1994)   DOI
10 G.D.O'Clock and M.T.Duffy, Appl. Physic. Lett., 23, 55(1973)   DOI
11 I.S. Didenko, F.S. Hickernell, and N.F. Naumenko, IEEE Trans. Ultrason. Ferroelectr. Freq. Contr., 47, 179(2000)   DOI   ScienceOn
12 R.B. Schwarz, K. Khachataryan, and R.E. Weber, Appl. Phys. Lett., 70, 1122(1997)   DOI   ScienceOn
13 C.Deger, E.Born, H.Angerer, O.Ambacher, M.Stutzmann, J.Hormstein, E.Riha, and G.Fischeruer, Appl. Phys. Lett., 72, 2400(1998)   DOI   ScienceOn
14 M.Yamaguchi, T.Yagi, T.Azuhata, T.Sato, K.Suzuki, S.Chichibu, S.Nakamura, J. Appl. Phys., 86, 1860 (1999)   DOI
15 T. Deduchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sato, R. Matsuo, T. Azuhata, M. Yamaguchi, T. Yagi, S. Chichibu, S. Nakamura, J. Appl. Phys., 86, 1860(1999)   DOI
16 K.Kim, W.R.L.Lambrecht, and B.Segall, Phys. Rev. B 53, 16310 (1996)   DOI   ScienceOn