• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

• Journal of information and communication convergence engineering
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• v.22 no.3
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• pp.215-220
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• 2024

This paper presents an efficient method for expanding interconnections in scenarios involving the reconstruction of interconnections across arbitrarily divided planes. Conventionally, such situations necessitate rebuilding interconnections based on all targets, ensuring minimal cost but incurring substantial time expenditure. In this paper, we present a tinkered tree algorithm designed to efficiently expand interconnections within a Euclidean plane divided into m randomly generated regions. The primary objective of this algorithm is to construct an optimal tree by utilizing the minimum spanning tree (MST) of each region, resulting in swift interconnection expansion. Interconnection construction is applied in various design fields. Notably, in the context of ad hoc networks, which lack a fixed-wired infrastructure and communicate solely with mobile hosts, the heuristic proposed in this paper is anticipated to significantly reduce costs while establishing rapid interconnections in scenarios involving expanded connection targets.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.31-35
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• 1999

In this paper, the lifetime dependence as a function of the line length of Al-1%Si thin film interconnections due to electromigration in semiconductor devices was studied. Al-1%Si thin film interconnections with a pattern of straight type were formed by using a standard photolithography process. The test patterns manufactured have line lengths in the range of 100 to 1600 $mu extrm{m}$. Al-1%Si thin film interconnections with Ti underlayers showed longer lifetime than those without Ti underlayers. Ti underlayers are believed to improve electromigration resistance resulting in a longer lifetime in Al-1%Si thin film interconnections. The dependence of lifetime on the line length in Al-1%Si/Ti thin film interconnections shows a saturation tendency near 800 $\mu\textrm{m}$ line length.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.4 s.247
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• pp.373-378
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• 2006

We present the design, fabrication, and characterization of a multi-chip microelectrofluidic bench, achieving both electrical and fluidic interconnections with a simple, low-loss and low-temperature electrofluidic interconnection method. We design 4-chip microelectrofluidic bench, having three electrical pads and two fluidic I/O ports. Each device chip, having three electrical interconnections and a pair of two fluidic I/O interconnections, can be assembled to the microelectofluidic bench with electrical and fluidic interconnections. In the fluidic and electrical characterization, we measure the average pressure drop of $13.6{\sim}125.4$ Pa/mm with the nonlinearity of 3.1 % for the flow-rates of $10{\sim}100{\mu}l/min$ in the fluidic line. The pressure drop per fluidic interconnection is measured as 0.19kPa. Experimentally, there are no significant differences in pressure drops between straight channels and elbow channels. The measured average electrical resistance is $0.26{\Omega}/mm$ in the electrical line. The electrical resistance per each electrical interconnection is measured as $0.64{\Omega}$. Mechanically, the maximum pressure, where the microelectrofluidic bench endures, reaches up to $115{\pm}11kPa$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.122-131
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• 2003

In this study, some characteristics of conductive and non-conductive adhesive inter-connections are derived, based on data from literature and own projects. Assembly of flip chip on flex is taken as a carrier. Potential failure mechanisms of adhesive interconnections reported in literature are reviewed. Some methods that can be used to evaluate the quality of adhesive interconnections and to evaluate their aging behavior are given. Possible finite element simulation approaches are introduced and the required critical materials properties are summarized. Response to temperature and moisture, resistance to reflow soldering and resistance to rapid change in temperature and humidity are elaborated. The effect of post cure during accelerated testing is discussed. This study shows that only a combined approach using finite element simulations, and use of appropriate experimental evaluation methods can result in revealing, understanding and quantifying the complex degradation mechanisms of adhesive interconnections during aging.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.385-387
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• 1994

Optical interconnections are more attractive than electronic interconnections because of their higher speed, freedom from planar constraints, immunity to electromagnetic interference effects and higher interconnection capacity. Volume hologram is one of the best way to implement optical interconnections. Diffraction efficiency and crosstalk effect are very important things for ensuring independent interconnections. Recently, a general systematic method that can handle a large number of superposed volume gratings in anisotropic host material is presented. In this study for numerical analysis of diffraction, above method is programmed in general form near Bragg angle. Diffraction orders for variation of grating strength are determined by comparing with the coupled-mode method. The effects of parameter variation are considered. Parameters include vertical and azimuthal incident angle, wavelength and interaction length. Diffraction analyses are also performed for intra-mode and inter-mode diffractions.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.1
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• pp.11-18
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• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.47-50
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• 2003

For large-scale systems which are composed of interconnections of many lower-dimensional subsystems, decentralized control is preferable since it can alleviate the computational burden, avoid communication between different subsystems, and make the control more feasible and simpler. A power system is such a large-scale system where generators are interconnected through transmission lines. Decentralized control is therefore considered for power systems. In this paper, a robust decentralized excitation control scheme for interactions is proposed to enhance the transient stability of multimachine power systems. First we employ a DFL(Direct Feedback Linearization) compensator to rancel most of the nonlinearities; however, the resulting model still contains nonlinear interconnections. Therefore, we design a robust controller in order to deal with Interconnection terms. In this procedure, an upper bound of interconnection terms is estimated by an estimator. The resulting adaptive scheme guarantees the uniform ultimate boundedness of the closed-loop dynamic systems in the presence of the uncertainties.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.161-168
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• 1996

For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

• International Journal of Control, Automation, and Systems
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• v.3 no.spc2
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• pp.270-277
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• 2005

In this paper, a decentralized control problem is considered for multimachine power systems with nonlinear interconnections and disturbances. A direct feedback linearization compensator is employed to cancel most of the nonlinearities, and then a backstepping procedure is applied to deal with the interconnections and to reduce the effects of a disturbance that does not satisfy the matching condition. In this procedure, the disturbance is handled by using a smooth approximation of the signum function. Practical stability is achieved under the assumption that the infinite norm of the disturbance is known. However, even in the case where the infinite norm of the disturbance is not known precisely, the proposed control system still guarantees $L_2$ stability. Furthermore, the origin is globally uniformly asymptotically stable in the absence of the disturbance. A three-machine power system is considered as an application example.