• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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• pp.2237-2238
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.378-379
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.293-296
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• 1998

In this paper, we propose a matrix hypercube graph as a new topology for parallel computer and analyze its characteristics of the network parameters, such as degree, routing and diameter. N-dimensional matrix hypercube graph MH(2,n) contains 22n vertices and has relatively lower degree and smaller diameter than well-known hypercube graph. The matrix hypercube graph MH(2,n) and the hypercube graph Q2n have the same number of vertices. In terms of the network cost, defined as the product of the degree and diameter, the former has n2 while the latter has 4n2. In other words, it means that matrix hypercube graph MH(2,n) is better than hypercube graph Q2n with respect to the network cost.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.851-857
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• 2002

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi~level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused how to reduce the consumption of raw slurry In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio were investigated. Finally, the CMP characteristics were discussed as a function of silica (SiO$_2$) abrasive contents.

• 전자공학회논문지C
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• 제34C권5호
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• pp.19-32
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• 1997

So far, the multiple path MINs to provide redundant paths in the traditional UPP MINs have been realized by adding additional hardware such as extra stages, duplicated data links, or multiple copies of sthe MIN. And the traditional MINs do not exploit locality: communication with all processor-memory paris takes the same amount of time. Also so far there has been little progress for exploiting locality of reference in MINs. In this paper, we present a new topology MIN, hybrid MIN that is constructed with 2N-3 SEs which is far fewer SEs than that of traditional MINs. Although the hybrid MIN is constructed with 2N-3 SEs, the hybrid MIN satisfies full access capability (FAC) and has redundant paths(but providing single path for 2 memory modules of each processor). Moreover the has redundant paths (but providing single path for 2 memory modules of each processor). Moreover the Hybrid MIN provides shortcut path between pairs which have frequent dat acommunication (locality of reference). Its performance under varing degrees of localized communication is analyzed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.18-22
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• 2002

CMP(chemical mechanical polishing) process has attracted as an essential technology of multilevel interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused that it has how to reduce the consumption of raw slurry. In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio was investigated. Finally, CMP the characteristics as a function of silica($SiO_2$) abrasive contents were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.178-181
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• 2002

We studied the characteristics of polishing pad, which can apply W CMP process for global planarization of multilevel interconnection structure. Also we investigated the effects of different sets of polishing pad. The purpose of this experiment is the cost reduction by the increase of pad life time and decrease of cycle time and slurry usage with new pad. Especially we studied the effect of polishing pad for CMP process by this experiment of polishing pad that is consumables material during CMP process. We expecting the increase of process throughput and improvement of device manufacturing yield because we can choose optimum polishing pad through this result.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.1267-1268
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2,CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.1271-1272
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.85-86
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables arc relatively high because of expensive slurry. In this paper, in order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, abrasives were added in the diluted silica slurry (DSS) in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry (MAS) for the oxide CMP application.