• Title/Summary/Keyword: Integrated TFT

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Poly-Silicon TFT's on Metal Foil Substrates for Flexible Displays

  • Hatalis, Miltiadis;Troccoli, M.;Chuang, T.;Jamshidi, A.;Reed, G.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.692-696
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    • 2005
  • In an attempt to fabricate all inclusive display systems we are presenting a study on several elements that would be used as building blocks for all-on-board integrated applications on stainless steel foils. These systems would include in the same substrate all or many of the components needed to drive a flat panel OLED display. We are reporting results on both digital and analog circuits on stainless steel foils. Shift registers running at speeds greater than 1.0MHz are shown as well as oscillators operating at over 40MHz. Pixel circuits for driving organic light emitting diodes are presented. The device technology of choice is that based on poly-silicon TFT technology as it has the potential of producing circuits with good performance and considerable cost savings over the established processes on quartz or glass substrates (amorphous Silicon a-Si:H or silicon on Insulator SOI).

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Functional Inks for Printed Electronics

  • Choi, Young-Min;Jeong, Sun-Ho
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.63.1-63.1
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    • 2012
  • In recent years, the functional inks for printed electronics that can be combined with a variety of printing techniques have attracted increasingly significant interest for use in low cost, large area, high performance integrated electronics and microelectronics. In particular, the development of solution-processable conductor, semiconductor and insulator materials is of great importance as such materials have decisive impacts on the electrical performance of various electronic devices, and, therefore, need to meet various requirements including solution processability, high electrical performance, and environmental stability. Semiconductor inks such as IGO, CIGS are synthesized by chemical solution method and microwave reaction method for TFT and solar cell application. Fine circuit pattern with high conductivity, which is valuable for flexible electrode for PCB and TSP devices, can be printed with highly concentrated and stabilized conductor inks such as silver and copper. Solution processed insulator such as polyimide derivatives can be use to all printed TFT device. Our research results of functional inks for printed electronics provide a recent trends and issues on this area.

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Design Method of Current Mode Logic Gates for High Performance LTPS TFT Digital Circuits (LTPS TFT 논리회로 성능향상을 위한 전류모드 논리게이트의 설계 방법)

  • Lee, J.C.;Jeong, J.Y.
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.9
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    • pp.54-58
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    • 2007
  • Development of high performance LTPS TFTs contributed to open up new SOP technology with various digital circuits integrated in display panels. This work introduces the current mode logic(CML) gate design method with which one can replace slow CMOS logic gates. The CML inverter exhibited small logic swing, fast response with high power consumption. But the power consumption became compatible with CMOS gates at higher clock speed. Due to small current values in CML, layout area is smaller than the CMOS counterpart even though CML uses larger number of devices. CML exhibited higher noise immunity thanks to its non-inverting and inverting outputs. Multi-input NAND/AND and NOR/OR gates were implemented by the same circuit architecture with different input confirugation. Same holds for MUX and XNOR/XOR CML gates. We concluded that the CML gates can be designed with few simple circuits and they can improve power consumption, chip area, and speed of operation.

Circuit Integration Technology of Low-Temperature Poly-Si TFT LCDs

  • Motai, Tomonobu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.75-80
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    • 2004
  • By the SOG (System-on-Glass) technology with excimer laser anneal process, the number of IC chips and the area of the mounted IC chips on the printed circuit board are reduced. In new circuit integrations on the glass substrate, we have developed D/A converter including the new capacitor array, amplifier comprising the original comparators and new display device with capturing images by integrated sensor into a pixel. This paper discusses the application of circuit integration of low-temperature poly-Si.

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Thin-Film Photosensors for OLED Flat-Panel Displays

  • Cok, Ronald S.;Nishikawa, Ryuji;Ogawa, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.277-280
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    • 2004
  • Thin-film photosensors on organic light emitting diode (OLED) glass substrates using active-matrix OLED TFT manufacturing processes have been constructed and optimized, and their performance has been characterized. Suitable control circuitry and applications are proposed. The photosensors may be integrated into OLED displays for detection of ambient illumination and for detection of OLED light emission, thereby enabling output, uniformity, and aging compensation.

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A 2.4-in QVGA p-Si LTPS AMLCD for Mobile Application

  • Chen, Yu-Cheng;Lin, Tai-Ming;Hsu, Tien-Chu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1029-1032
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    • 2005
  • A 262K-color QVGA LTPS AMLCD was developed. This panel has integrated gate driver and data multiplexer (1:3) by p_Si LTPS TFT process. The commercialized driver IC was adopted to implement this display. Fine image quality, low powerconsumption and cost-efficiency feature make the panel be suitable for mobile application.

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Actively Addressable Carbon NanoTube Emitters for Field Emission Display

  • Song, Yoon-Ho;Hwang, Chi-Sun;Kim, Kwang-Bok
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.194-197
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    • 2003
  • The actively addressable carbon nanotube (CNT) emitters have been studied for stable and low-voltage driving field emission display (FED). The a-Si TFT and screen-printed CNT emitters were successfully integrated to fabricate the diode type active-matrix cathode and FED panel. Also, we propose a new FED architecture based on the actively controlled triode CNT emitters showing the properties of ideal triode type cathode with electron beam focusing effect.

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Flexible Active-Matrix Electrophoretic Display With Integrated Scan-And Data-Drivers

  • Miyazaki, Atsushi;Kawai, Hideyuki;Miyasaka, Mitsutoshi;Inoue, Satoshi;Shimoda, Tatsuya
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.153-156
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    • 2004
  • A newly developed flexible active-matrix (AM-) electrophoretic display (EPD) is reported. The AM-EPD features: (1) low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology, (2) fully integrated scan- and data-drivers, (3) flexibility and light-weight realized by transferring the whole circuits onto a plastic substrate using $SUFTLA^{TM}$ (Surface Free Technology by Laser Annealing/Ablation) process. A large storage capacitor is formed in each pixel so that driving electric field can be kept sufficiently strong during a writing period Two-phase driving scheme, a reset-phase which erases a previous image and a writing-phase for writing a new image, was chosen to cope with EPD's high driving voltage. The flexible AM-EPD has been successfully operated with a driving voltage of 8.5 V.

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2.8 inch QVGA System On Panel LCD Employing Advanced CMOS LTPS Technology

  • Yoon, Ji-Mo;Yoo, Juhn-S.;Yu, J.S.;Kim, E.;Son, C.Y.;Park, J.K.;Yoo, Y.S.;Lim, K.M.;Kim, C.D.;Chung, I.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.285-288
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    • 2005
  • A 2.8 inch fully integrated SOP employing a high performance LTPS CMOS TFT technology has been developed for mobile display applications. The LCD module is directly interfaced with 3V 6-bit RGB source via timing control circuitry. The integrated data driver comprises a 6-bit hybrid type DAC with low power analog buffer.

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Ultra-High Resolution and Large Size Organic Light Emitting Diode Panels with Highly Reliable Gate Driver Circuits

  • Hong Jae Shin
    • International journal of advanced smart convergence
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    • v.12 no.4
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    • pp.1-7
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    • 2023
  • Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.