• Title/Summary/Keyword: Integrated Mobility

Search Result 285, Processing Time 0.024 seconds

Implementation of Down Converter for Ku-Band Application (Ku 대역용 주파수변환기의 구현)

  • 정동근;김상태;하천수
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.4 no.3
    • /
    • pp.527-536
    • /
    • 2000
  • This paper discusses the design of self-oscillating mixer type low noise down converter using the microwave field effect transistor. The mixer is consists of local oscillator in which high stability dielectric resonator and band pass filter to get rid of spurious oscillation at intermediate frequency stage. The microstrip antenna was integrated in the same substrate which generate 12.3GHz and low noise amplifier was also added after antenna using 3 stage of high electron mobility transistors. The output frequency from the local oscillator was chosen as 11.3GHz for the Ku-band application. The measured phase noise was -804dBc/Hz at 100kHz offset frequency, and the gain was 7~12dB in frequency range from 12.0GHz to 12.7GHz. The noise figure at intermediate frequency stage was 64H. The designed model shows less conversion loss than previous diode type mixer. The proposed mixer can be used in digital satellite broadcasting and communication system and expected to use in next generation low noise block design.

  • PDF

An Enhanced Xcast Protocol for Mobile Nodes in IP Networks (IP 망에서의 이동 노드를 위한 향상된 Xcast, 프로토콜)

  • Nam Sea-Hyeon
    • Journal of Internet Computing and Services
    • /
    • v.6 no.3
    • /
    • pp.85-95
    • /
    • 2005
  • Whereas the traditional multicast schemes based on Mobile IP can support a limited number of very large multicast groups, the Xcast protocol can support a very large number of small multicast groups, In the Xcast, the source node encodes the list of destinations in the Xcast header. Therefore, the maximum packet size in the network limits the number of destinations that a Xcast packet may have. In this paper, an enhanced Xcast protocol is proposed to solve the multicast group size limitation of the existing Xcast protocol in providing multicast service for mobile nodes. Moreover, the SIP (a very flexible control plane protocol) is integrated with the proposed multicast scheme to provide mobility awareness on the application layer. The simulation results verify that the proposed multicast scheme not only increases the packet delivery ratio and the data packet forwarding efficiency but also achieves low latency of packets in the network.

  • PDF

Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cells with Modulated Tunneling Oxide

  • Lee, Sang-Youl;Yang, Seung-Dong;Yun, Ho-Jin;Jeong, Kwang-Seok;Kim, Yu-Mi;Kim, Seong-Hyeon;Lee, Hi-Deok;Lee, Ga-Won;Oh, Jae-Sub
    • Transactions on Electrical and Electronic Materials
    • /
    • v.14 no.5
    • /
    • pp.250-253
    • /
    • 2013
  • In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

M2M Technology based Global Heathcare Platform (M2M 기반의 글로벌 헬스케어 시스템 플랫폼)

  • Jung, Sang-Joong;Chung, Wan-Young
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.14 no.11
    • /
    • pp.2435-2441
    • /
    • 2010
  • A global healthcare system based on M2M technology is proposed to support a good mobility, flexibility and scalability to the patients in 6LoWPAN. Sensor nodes integrated with wearable sensors are linked to gateway with IEEE 802.15.4 protocol and 6LoWPAN protocol for data acquisition and transmission purpose via external network. In the server, heart rate variability signals are obtained by signal processing and used for time and frequency domain performance analysis to evaluate the patient's health status. Our approach for global healthcare system with non-invasive and continuous IP-based communication is managed to process large amount of biomedical signals in the large scale of service range accurately.

Performance Enhancement of AAA-based Authentication forHMIPv6 (AAA 기반의 인증을 이용한 HMIPv6 성능 개선 기법)

  • Kim, Mi-Young;Mun, Young-Song
    • Journal of KIISE:Information Networking
    • /
    • v.32 no.5
    • /
    • pp.551-560
    • /
    • 2005
  • To reduce the amount of the signaling messages occurred in movement, HMIPv6 has been introduced as the hierarchical mobility management architecture tor MIPv6 by regarding the locality of movements. When approaching the visited link, the authentication procedure should be done successfully prior to any motility support message exchanges. The AAA(Authentication, Authorization and Account) authentication service is applied gradually to the wireless LAN and Cellular networks. However, It may bring about the service latency for the sessions of requiring the real-time processing due to not providing the optimized signaling in local and frequent movements. In this paper, we propose the authentication architecture with 'delegation' scheme to reduce the amount of signaling message and latency to resume for local movements by integrating it with HMIPv6 architecture. We provide the integrated authentication model and analyze the performance and effectivity of our proposal and finally offer the analysis materials comparing to the exiting authentication scheme. It cuts down the cost to $33.6\%$ at average measurement.

Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition (저압화학증착을 이용한 실리콘-게르마늄 이종접합구조의 에피성장과 소자제작 기술 개발)

  • Shim, K.H;Kim, S.H;Song, Y.J;Lee, N.E;Lim, J.W;Kang, J.Y
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.18 no.4
    • /
    • pp.285-296
    • /
    • 2005
  • Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 % in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

Direct Transfer Printing of Nanomaterials for Future Flexible Electronics

  • Lee, Tae-Yun
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2011.05a
    • /
    • pp.3.1-3.1
    • /
    • 2011
  • Over the past decade, the major efforts for lowering the cost of electronics has been devoted to increasing the packaging efficiency of the integrated circuits (ICs), which is defined by the ratio of all devices on system-level board compared to the area of the board, and to working on a larger but cheaper substrates. Especially, in flexible electronics, the latter has been the favorable way along with using novel nanomaterials that have excellent mechanical flexibility and electrical properties as active channel materials and conductive films. Here, the tool for achieving large area patterning is by printing methods. Although diverse printing methods have been investigated to produce highly-aligned structures of the nanomaterials with desired patterns, many require laborious processes that need to be further optimized for practical applications, showing a clear limit to the design of the nanomaterial patterns in a large scale assembly. Here, we demonstrate the alignment of highly ordered and dense silicon (Si) NW arrays to anisotropically etched micro-engraved structures using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre-defined structures. The assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays were subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As proof-of-concept, flexible back-gated NW field effect transistors (FETs) were fabricated. The fabricated FETs had an effective hole mobility of 0.17 $cm2/V{\cdot}s$ and an on/off ratio of ${\sim}1.4{\times}104$. These results demonstrate that our NW gravure printing technique is a simple and effective method that can be used to fabricate high-performance flexible electronics based on inorganic materials.

  • PDF

Evaluation of the Concentration Distribution and the Contamination Influences for Beryllium, Cobalt, Thallium and Vanadium in Soil Around the Contaminated Sources (오염원 인근 토양 중 베릴륨(Be), 코발트(Co), 탈륨(Tl), 바나듐(V)의 농도분포 및 오염영향 평가)

  • Lee, Hong-gil;Noh, Hoe-Jung;Yoon, Jeong Ki;Lim, Jong-hwan;Lim, Ga-Hee;Kim, HyunKoo;Kim, Ji-in
    • Journal of Soil and Groundwater Environment
    • /
    • v.23 no.4
    • /
    • pp.48-59
    • /
    • 2018
  • Beryllium (Be), cobalt (Co), thallium (Tl) and vanadium (V) are candidates of 21 priority soil pollutants in Korea. The distribution of their concentration in soils from three contamination sources including industrial, roadside and mining areas was investigated. Concentrations of the metals were evaluated quantitatively using pollution indices and the fractionation of metals was conducted using modified SM&T (Standards Measurements and Testing programme) sequential extraction. Concentrations of the metals for all samples from industrial and roadside soils were within the range of natural background levels, while some of Be in soils from abandoned mines exceeded that the range. Enrichment Factor (EF) and Nemerow Integrated Pollution Index (NIPI) for Be, Co, Tl and V showed that there are effects or possibilities of anthropogenic activities. Pollution Load Index (PLI) analyses indicated all investigated sites needed further monitoring. The results of sequential extractions indicated mobile fractions (F1+F2) of Be, Tl and V were below 30% except some of Co in soil, which implies their low mobility to neighboring environment media. Variable tools like sequential extraction, comparison with background/actual concentration and pollution indices, as well as aqua regia extraction should be considered when evaluating Be, Co, Tl, V in soil.

High-performance 94 GHz MMIC Low Noise Amplifier using Metamorphic HEMTs (Metamorphic HEMT를 이용한 우수한 성능의 94 GHz MMIC 저잡음 증폭기)

  • Kim, Sung-Chan;An, Dan;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.45 no.8
    • /
    • pp.48-53
    • /
    • 2008
  • In this paper, we developed the MMIC low noise amplifier using 100 nm metamorphic HEMTs technology in combination with coplanar circuit topology for 94 GHz applications. The $100nm\times60{\mu}m$ MHEMT devices for the MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm, an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency $(f_T)$ and maximum oscillation frequency $(f_{max})$ were 195 GHz and 305 GHz, respectively. The realized MMIC LNA represented $S_{21}$ gain of 14.8 dB and noise figure of 4.6 dB at 94 GHz with an over-all chip size of $1.8mm\times1.48mm$.

Implementation of Multi-Streaming System of Live Video of Drone (드론 라이브 영상의 다중 스트리밍 시스템 구현)

  • Hwang, Kitae;Kim, Jina;Choi, Yongseok;Kim, Joonhee;Kim, Hyungmin;Jung, Inhwan
    • The Journal of the Institute of Internet, Broadcasting and Communication
    • /
    • v.18 no.1
    • /
    • pp.143-149
    • /
    • 2018
  • This paper presents an implementation of a streaming system which can forward live video stream to multiple users from a Phantom4, which is a drone made by DJI. We constructed the streaming server on Raspberry Pi 3 board for high mobility. Also We implemented the system so that the video stream can be played on any devices if the HTML5 standard web browser is utilized. We compiled C codes of FFmpeg open sources and installed in the Raspberry Pi3 as the streaming server and developed a Java application to execute as the integrated server that controls the other softwares on the streaming server. Also we developed an Android application which receives the live video stream from the drone and sends the streaming server continuously. The implemented system in this paper can successfully stream the live video on 24 frames per second at the resolution of 148x112 in considering the low hardware throughput of the streaming server.