• Journal of the Korean Association of Geographic Information Studies
• /
• v.26 no.4
• /
• pp.1-16
• /
• 2023

In 2005, the selection of 10 innovation cities was completed, and since 2013, public institutions began relocating to innovation cities. As a policy aimed at promoting balanced regional development, there were significant expectations from the regions. However, although the population moving to innovation cities has increased, it remains to be seen how much inflow is from the capital region and what spatial characteristics exist nationwide. Therefore, this study aims to analyze whether the innovation cities are fulfilling their roles by examining the patterns of inflow from the capital region and the spatial characteristics, and to reassess the policy direction for future innovation cities. We utilized the Microdata Integrated Service (MDIS) provided by Statistics Korea from 2013 to 2021. For the data collection reasons, we focused on analyzing the three cities. The results showed that in the initial stages of innovation city development, there was a significant influx of population from the capital region, leading to some effects on population dispersion and balanced regional development. However, over time, a phenomenon emerged where more people started to move back to the capital region, indicating a problematic trend. Furthermore, the Gyeongbuk Innovation City and Gwangju-Jeonnam Innovation City showed similarities in terms of reasons for migration, age of householder, and number of household members. However, the Gyeongnam Innovation City exhibited distinct characteristics compared to the other two cities. While the reasons for this phenomenon may be diverse, the current situation suggests that the goal of achieving "balanced national development" has reached its limits. Therefore, urgent measures need to be taken for improvement that take regional characteristics into account. Furthermore, in designing the second phase of the public institution relocation plan is required to avoid repeating the same issues and ensure a more thoughtful approach.

• ETRI Journal
• /
• v.42 no.4
• /
• pp.549-561
• /
• 2020

We developed a 0.1-㎛ metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz-108 GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13 dB-17 dB for RF frequencies of 80 GHz-110 GHz and image-rejection ratios of 17 dB-19 dB for RF frequencies of 93 GHz-100 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.9
• /
• pp.25-30
• /
• 2004

In this Paper, the 0.1 w InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC, and a 100 GHz MIMIC amplifier were designed and fabricated. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 173 GHz and the maximum oscillation frequency(fmax) is 271 GHz. A 100 GHz amplifier was designed using 0.1${\mu}{\textrm}{m}$ MHEMT and CPW technology. The measured results from the 100 GHz MIMIC amplifiers show good S21 gain of 10.1 dB and 12.74 dB at 100 GHz and 97.8 GHz, respectively.

• Korean Journal of Materials Research
• /
• v.30 no.6
• /
• pp.285-291
• /
• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.281.1-281.1
• /
• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Journal of Internet Computing and Services
• /
• v.12 no.4
• /
• pp.135-143
• /
• 2011

The smartphone allows learners to be involved in learning environments in which students actively study from anywhere and at anytime. Because learners can keep engaged in the environment where they can access to the internet, they can efficiently study in transit using various features and functions of smartphone. Smart learning is a unique learning based on mobility and functions of mobile digital devices including searching and sharing information and using various applications. For the effective use of smartphones in e-learning systems, the contents and learning management systems should be designed to meet effective teaching and learning principles, such as interactivity and collaborations. In smart learning, learning contents for effective learning need to be integrated with typical functions of smartphones and to develop small pieces of learning contents according to learning topics. In the case of learning management systems, it should reflect understanding of learners' environment using a PA agent program and provide personalized learning services.

• Journal of Institute of Control, Robotics and Systems
• /
• v.11 no.12
• /
• pp.1051-1061
• /
• 2005

This paper proposes a ubiquitous robot, Ubibot, as an integration of three forms of robots: Software robot (Sobot), Embedded robot (Embot) and Mobile robot (Mobot). A Sobot is a virtual robot, which has the ability to move to any place or connect to any device through a network in order to overcome spatial limitations. It has the capacity to interpret the context and thus interact with the user. An Embot is embedded within the environment or within physical robots. It can recognize the locations of and authenticate the user or robot, and synthesize sensing information. Also it has the ability to deliver essential information to the user or other components of Ubibot by using various types of output devices. A Mobot provides integrated mobile service. In addition, Middleware intervenes different protocols between Sobot, Embot, and Mobot in order to incorporate them reliably. The services provided by Ubibot will be seamless, calm and context-aware based on the combination of these components. This paper presents the basic concepts and structure of Ubibot. A Sobot, called Rity, is introduced in order to investigate the usability of the proposed concepts. Rity is a 3D synthetic character which exists in the virtual world, has a unique IP address and interacts with human beings through Vision Embot, Sound Embot, Position Embot and Voice Embot. Rity is capable of moving into a Mobot and controlling its mobility. In doing so, Rity can express its behavior in the virtual world, for example, wondering or moving about in the real world. The experimental results demonstrate the feasibility of implementing a Ubibot in a networked environment.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.4 no.3
• /
• pp.527-536
• /
• 2000

This paper discusses the design of self-oscillating mixer type low noise down converter using the microwave field effect transistor. The mixer is consists of local oscillator in which high stability dielectric resonator and band pass filter to get rid of spurious oscillation at intermediate frequency stage. The microstrip antenna was integrated in the same substrate which generate 12.3GHz and low noise amplifier was also added after antenna using 3 stage of high electron mobility transistors. The output frequency from the local oscillator was chosen as 11.3GHz for the Ku-band application. The measured phase noise was -804dBc/Hz at 100kHz offset frequency, and the gain was 7～12dB in frequency range from 12.0GHz to 12.7GHz. The noise figure at intermediate frequency stage was 64H. The designed model shows less conversion loss than previous diode type mixer. The proposed mixer can be used in digital satellite broadcasting and communication system and expected to use in next generation low noise block design.

• Journal of Internet Computing and Services
• /
• v.6 no.3
• /
• pp.85-95
• /
• 2005

Whereas the traditional multicast schemes based on Mobile IP can support a limited number of very large multicast groups, the Xcast protocol can support a very large number of small multicast groups, In the Xcast, the source node encodes the list of destinations in the Xcast header. Therefore, the maximum packet size in the network limits the number of destinations that a Xcast packet may have. In this paper, an enhanced Xcast protocol is proposed to solve the multicast group size limitation of the existing Xcast protocol in providing multicast service for mobile nodes. Moreover, the SIP (a very flexible control plane protocol) is integrated with the proposed multicast scheme to provide mobility awareness on the application layer. The simulation results verify that the proposed multicast scheme not only increases the packet delivery ratio and the data packet forwarding efficiency but also achieves low latency of packets in the network.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.5
• /
• pp.250-253
• /
• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.