• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.74-77
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• 2015

The cure kinetics of a neat epoxy system and epoxy/silica composite were investigated by DSC analysis. A cycloaliphatic type epoxy resin was diglycidyl 1,2-cyclohexanedicarboxylate and curing agent was anhydride type. To estimate kinetic parameters, the Kissinger equation was used. The activation energy of the neat epoxy system was 88.9 kJ/mol and pre-exponential factor was 2.64×10¹² min⁻¹, while the activation energy and pre-exponential factor for epoxy/silica composite were 97.4 kJ/mol and 9.21×10¹² min⁻¹, respectively. These values showed that the silica particles have effects on the cure kinetics of the neat epoxy matrix.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.82-85
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• 2015

Mechanical and electrical properties of epoxy/silica microcomposites were investigated. The cycloaliphatic- type epoxy resin was diglycidyl 1,2-cyclohexanedicarboxylate and the curing agent was of an anhydride type. To measure the glass transition temperature (Tg), dynamic differential scanning calorimetry (DSC) analysis was carried out, and tensile and flexural tests were performed using a universal testing machine (UTM). Electrical breakdown strength, the most important property for electrical insulation materials, and insulation breakdown strength were also tested. The microcomposite with 60 wt% microsilica showed maximum values in mechanical and electrical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.365-370
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.161-161
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• 2009

Ion bombarded inorganic materials for LC alignment has been researched as it provides controllability in a nonstop process for producing high-resolution displays. Many optically transparent insulators such as $SiOx$ and a-C:H have been investigated as potential candidates for inorganic alignment materials. Even so, LC orientation on a new material with superior capacity is required to produce high-performance displays. Many inorganic materials with high permittivities can reduce the voltage losses due to the LC alignment layer that are a trade-off for its capacitance. The minimum voltage for device operation can be applied to the LC under low external voltage using these materials. This means that low power consumption for LCD applications can be achieved using a high-k alignment structure in which the LC can be driven effectively with a low threshold voltage. Among the many other potential high-k oxides, HfO2 is considered to be one of the most promising due to its remarkable properties of high dielectric constant, relatively low leakage current, large band gap (5.68 eV), and high transparency. Due to these characteristics, HfO2 can be used in LC alignment to increase the capacitance of the inorganic alignment layer for low-voltage driving of LCs.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.41-44
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• 2003

We propose portable equipment that monitors current and voltage of high-potential power transmission lines. In the equipment, a current and voltage sensor are attached to an insulator that supports a power transmission line: A clamped to the power line and the detected current signal is transmitted to the ground station by a wireless optical link using transmission line is detected by a high resistance element, zinc oxide (ZnO). That acts as a potential divider between the power line and ground. We make an experimental device for 66kV power line and demonstrate that it can monitor currents proposed equipment is small-sized, light, and inexpensive in comparison with the conventional CT (current transformer) and PT (potential transformer) since it does not require high potential insulators and magnetic cores, further, the equipment is easily installed owing to its small size and its simple structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.100-100
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• 2016

Among various two-dimensional (2D) materials, 2D semiconductors and insulators have attracted a great deal of interest from nanoscience community beyond graphene, due to their attractive and unique properties. Such excellent characteristics have triggered highly active researches on 2D materials, such as hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). New physics observed in 2D semiconductors allow for development of new-concept devices. Especially, these emerging 2D materials are promising candidates for flexible and transparent electronics. Recently, van der Waals heterostructures (vdWH) have been achieved by putting these 2D materials onto another, in the similar way to build Lego blocks. This enables us to investigate intrinsic physical properties of atomically-sharp heterostructure interfaces and fabricate high performance optoelectronic devices for advanced applications. In this talk, fundamental properties of various 2D materials will be introduced, including growth technique and influence of defects on properties of 2D materials. We also fabricate high performance electronic/optoelectronic devices of vdWH, such as transistors, memories, and solar cells. The device platform based on van der Waals heterostructures show huge improvement of devices performance, high stability and transparency/flexibility due to unique properties of 2D materials and ultra-sharp heterointerfaces. Our work paves a new way toward future advanced electronics based on 2D materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.125.1-125.1
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• 2016

The excitonic insulator (EI), which is one of fundamental insulators, was theoretically proposed in 1967 but its material realization has not been established well. Only a few materials were proposed as EIs but their experimental evidences were indirect such as the renormalization of band dispersions or an anomaly in electrical resistivity. We conducted scanning tunneling microscopy / spectroscopy measurements and found out that $Ta_2$ $NiSe_5$, which was the most recently proposed as an EI, had a metal-insulator phase transition with the energy gap of 700 meV at 78 K. Moreover, the spatially delocalized excitonic energy level was observed within the energy gap, which could be the direct evidence of the EI ground state. Our theoretical model calculation with the order parameter of 150 meV reproduces the spectral function and the excitonic energy gap very well. In addition, experimental data shows that the band character is inverted at the valence and conduction band edges by the exciton formation, indicating that the mechanism of exciton condensation is similar to the Bardeen-Cooper-Schrieffer (BCS) mechanism of cooper pairs in superconductors.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.8 no.4
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• pp.497-509
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• 1996

Evacuated powder insulations have long been known to have better thermal performance than existing commercially available insulators, such as fiber glass and CFC-blown foam. To make a composite powder panel, a series of individually evacuated panels was encapsulated in a rigid closed cell foam matrix. The panels were encapsulated in a thin glass sheet barrier to preserve the vacuum. The thermal conductivity of the individual panel was found to be $0.0062W/m^{\circ}K$ by experiment and the polyurethane foam above had a thermal conductivity of $0.024W/m^{\circ}K$. In this study, numerical analysis using finite element method was carried out to investigate insulation performance of rigid foam/evacuated powder composite panel with respect to panel geometries such as panel pitch, panel aspect ratio and panel area ratio. Numerical analysis has indicated that more optimal vacuum panel geometries, much lower overall thermal conductivities can be achieved.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.221-227
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• 1997

The Pd/NiCr gate MISFET-type sensors were fabricated for detecting hydrogen dissolved in high-capacivity transformer oil. To improve stability and high concentration sensitivity of the sensor, Pd/NiCr double catalysis metal gate was used. To reduce the serious gate voltage drift of the sensor induced by hydrogen, the gate insulators of 2 FETs were constructed with double layer of silicon dioxide and silicon nitride. The hydrogen sensitivity of the Pd/NiCr gate MISFET is about a half of Pd/Pt gate MISFET's sensitivity but the Pd/NiCr gate MISFET has good stability and high concentration detectivity up to 1000 ppm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.23.2-23.2
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• 2009

Atomic layer deposition (ALD)have been proven to be a very attractive technique for the fabrication of advanced gate dielectrics and DRAM insulators due to excellent conformality and precise control of film thickness and composition, However, one major disadvantages of ALD is its relatively low deposition rate (throughput) because the deposition rate is typically limited by the time required for purging process between the introduction of precursors. In order to improve its throughput, many efforts have been made by commercial companies, for example,the modification reactor and development of precursors. However, any promising solution has not reported to date. We developed a new concept ALD system(Lucida TM S200) with high-throughput. In this process, a continuous flow of ALD precursor and purging gas are simultaneously introduced from different locations in the ALD reactor. A cyclic ALD process is carried out by moving the wafer holder up and down. Therefore, the time required for ALD reaction cycle is determined by speed of the wafer holder and vapor pressure of precursors. We will present the operating principle of our system and results of deposition.