• Title/Summary/Keyword: Insulation voltage

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Fabrication and Characteristics of Integrated Nb DC SQUID (집적화된 Nb DC SQUID 소자의 제작 및 특성)

  • Lee, Yong-Ho;Gwon, Hyeok-Chan;Kim, Jin-Mok;Park, Jong-Cheol
    • Journal of the Korean Magnetics Society
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    • v.2 no.3
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    • pp.277-281
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    • 1992
  • We have designed, fabricated and tested an integrated planar DC SQUID which incorporates input coil and mofulation coil in thin film structure. The SQUID uses Nb /Al-oxide /Nb Josephson junctions and Pd shunt resistors, and the SQUID loop incorporates two rings connected in series forming figure '8' structure and has the advantage of a negligibly small circulating current for the spatially homogeneous noise fields. The devices were fabricated using photolithographic technique, RF magnetron sputtering, anodic oxidation for insulation and lift-off process. The preliminary test of the fabricated SQUID at 4.2 K showed that the flux-voltage characteristics were smooth enough to adopt standard readout system, and the voltage noise was too small to be measured by direct method and so the white noise was thought to be less than $10^{-4}\;{\phi}_o/\;\sqrt{H_z}$.

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Electrical Characteristics of Triple-Gate RSO Power MOSFET (TGRMOS) with Various Gate Configurations and Bias Conditions

  • Na, Kyoung Il;Won, Jongil;Koo, Jin-Gun;Kim, Sang Gi;Kim, Jongdae;Yang, Yil Suk;Lee, Jin Ho
    • ETRI Journal
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    • v.35 no.3
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    • pp.425-430
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    • 2013
  • In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage ($BV_{DS}$) and on-state current ($I_{D,MAX}$), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer ($SiO_2$) of a conventional RSO power MOSFET is changed to a multilayered insulator ($SiO_2/SiN_x/TEOS$). The inserted $SiN_x$ layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as $BV_{DS}$ and $I_{D,MAX}$, simulation studies are performed on the function of the gate configurations and their bias conditions. $BV_{DS}$ and $I_{D,MAX}$ are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This $I_{D,MAX}$ variation indicates the specific on-resistance modulation.

UHF Narrow Band Type Partial Discharge Diagnosis Method for the Internal Insulation Performance Verification of the Gas Insulated Switchgear (가스절연 개폐장치의 내부절연 성능검증을 위한 UHF 협대역 부분방전 진단법)

  • Song Won-Pyo;Kim Jung-Bae;Kim Min-So;Jung Jae-Ryong;Park Seung-Jae;Ko Heui-Suk
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.9
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    • pp.414-420
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    • 2005
  • A method for partial discharge diagnosis based on UHF narrow band type for GIS has been developed and calibrated. In generally, PD cannot be directly measured under on-line condition, but we can indirectly measure the electromagnetic wave made by PD using the high-frequency antenna. Compared with VHF band, electromagnetic waves of UHF band have a low influence for external noise in high-voltage substation. Therefore, we can detect the real abnormality with several pC in GIS using UHF narrow-band type method. For the case of no internal VHF sensor for GIS of the domestic substation, it has applied to use the external UHF sensor attached in spacer in GIS of existing substation. In this paper, we firstly described the technique of partial discharge measurement using frequency analysis and phase analysis in UHF band. Secondly, we presented the results of sensitivity test, the relationship of dBm-pC and diagnosis result of the cause of PD source by phase analysis. And then, we report the diagnosis result of partial discharge on the real GIS in domestic substation. These results make above method applicable for measurement of quantity and cause of PD for real operation GIS in high-voltage substation.

Design of 1 MVA Single Phase HTS Transformer with Pancake Windings Cooled by Natural Convection of Sub-cooled Liquid Nitrogen

  • Kim, Woo-Seok;Kim, Sung-Hoon;Hahn, Song-yop;Park, Kyeong-Dal;Joo, Hyeong-Gil;Hong, Gye-Won;Han, Jin-Ho;Lee, Don-Kun;Park, Yeon-Suk
    • Progress in Superconductivity and Cryogenics
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    • v.5 no.3
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    • pp.34-37
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    • 2003
  • A 1 MVA single-phase high temperature superconducting (HTS) transformer with BSCCO-2223 wire was designed in this paper. The rated voltages of each sides of the transformer are 22.9 kV and 6.6 kV respectively. Double pancake HTS windings arranged reciprocally will be used for the transformer windings, because of the advantages of insulation and distribution of surge voltage in case of a large power and high voltage transformer. Single HTS wire was used for the primary windings and four parallel wires were used for the secondary windings of the transformer with transposition. A core of the transformer was designed as a shell type core separated with the windings by a cryostat made of GFRP with a room temperature bore. The operating temperature of the HTS windings will be about 65K with sub-cooled liquid nitrogen. A cryogenic cooling system using a GM-cryocooler for this HTS transformer by natural convection of liquid nitrogen was designed. This type of cooling system can be a good option for compactness, efficiency, and reliability of the HTS transformer.

A Study on the Analysis of Heat and Metallurgical Structure of Connection Parts for Residual Current Protective Devices (저압용 누전차단기 접속부의 발열 및 금속 조직 분석에 관한 연구)

  • Choi Chung-Seog;Shong Kil-Mok;Kim Dong-Ook;Kim Dong-Woo;Kim Young-Seok
    • Fire Science and Engineering
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    • v.18 no.4
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    • pp.57-63
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    • 2004
  • We investigated heat properties of connection terminal in residual current protective devices(RCD) according to contact pressure for low voltage appliance. And we analyzed voltage and current waveform and oxide propagation when the poor-contact happened between terminal and wire. When contact pressure between terminal and connection wire was not applied, the heat was generated and an oxide was formed on the surface of the wire. The temperature of the insulation surrounding terminal was ascended sharply by poor-contact, micro-sparks and continuous arc sound happened in interior terminal. When the poor-contact by vibration occurred inner conductor of terminal and wire, an oxide was propagated on contact surface and the temperature was increased at 869℃. Thus, we found that the risk of electrical disaster is high in terminal and connection wire parts.

Characteristics of Partial Discharge Under HVDC in SF6 Gas (SF6 가스 중 직류 고전압 하에서 부분방전 특성)

  • Kim, Min-Su;Kim, Sun-Jae;Jeong, Gi-Woo;Jo, Hyang-Eun;Kil, Gyung-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.4
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    • pp.238-243
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    • 2014
  • This paper dealt with the measurement and analysis of partial discharge (PD) under high voltage direct current (HVDC) in SF6 gas. Electrode systems such as a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack on epoxy plate and a free particle (FP) were fabricated to simulate the insulation defects. The analysis system was designed with a Time-Frequency (T-F) map algorithm programed based on LabVIEW. This can arrange the acquired PD pulses into frequency and time domain. A HVDC power source is composed of a transformer (220 V/50 kV), a diode (100 kV) and a capacitor (50 kV, 0.5 ${\mu}F$). The gap between the electrodes is 3 mm, and the $SF_6$ gas was set at 5 bar. PD pulses were detected by a 50 ${\Omega}$ non-inductive resistor. In the analysis, PD pulses were distributed below 0.5 MHz and 20 ns ~ 35 ns for the POC, 0.7 MHz ~ 1.7 MHz, below 0.6 MHz and 10 ns ~ 40 ns and 60 ns ~125 ns for the POE, below 0.1 MHz and 135 ns ~ 215 ns for the crack, and below 1.6 MHz and 250 ns for the FP.

UHF Sensor Development for Partial Discharge Exclusively for Measurement in 25.8kV GIS (25.8kV GIS 부분방전 측정전용 UHF센서 개발)

  • Choi, Mun-Gyu;Cha, Hanju
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.6
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    • pp.1083-1088
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    • 2016
  • 25.8kV GIS part generated by sensors to measure contact an inflow of noise depending on the extent of the measured discharge occurs often not easy. Partial discharge signal measurement sensor suitable for developing a more useful measurements at the scene to this, partial discharge waveform analysis developed a sensor, and to utilize forSensor on the development of the most important is VSWR decided to (voltage standing wave ratio) voltage standing-wave ratio less than 1.5 and decided less than at the full spectrum bands that are measured, this time Return loss, as measured value by absolute criteria 14.0 dB produced the sensor, designed to or more. UHF 1.5~0.5 GHz bandwidth spectrum to be measured in GIS. UHF bands were designed to be able to measure the best signal. Recently, 25.8kV GIS production company has been increasing variety of GIS were made open spacer in partial discharge in accordance with the not very easy to detect the signal. The sensor is designed height of four cm external spacer is attachment GIS in an influx of outside noise measurement, and be so manufactured as to facilitate the least we've done. Also, since partial discharge which occur can measure the frequency of the 170kV GIS external partial-discharge signals that occur at the scene of insulation applied to the spacer. Features, and also derived good results using global positioning. Also measured discharge point about sensors that are stable and the reliability of the development and local substation equipment failure occurring signal analysis through the discharge for the prevention of widely. There should be to believe that used.

Effect of Epoxy Dielectric Cooling on existing metal Porticoes in GIS (GIS내 금속이물 존재시 에폭시 절연코팅의 효과)

  • 곽희로;구교선;김영찬
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.17 no.2
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    • pp.95-101
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    • 2003
  • In this paper, partial discharges(PDs), lift off and breakdown voltage were measured when metal particles existed in a model GIS coated with epoxy resin on its bottom electrode, and the measured results were analyzed after comparing with the model DIS not coated. In order to presume the various fault case in GIS, we measured the experimental values with changing some experimental factors, such as the mixture ratio of SF$\_$6//N$_2$, the pressure of the gases, the kinds and diameter of the metal particles, and the coating thickness of the epoxy resin. As a result, the PDIV increased with the thickness of the epoxy resin, while the magnitude of PDs decreased at the same condition. The lift off voltages of steel alloy particles were higher than that of copper particles, and increased wit diameter of particles. Futhermore, the lift off voltages in the case of the electrode coated with epoxy resin were higher than that in the case of the uncoated one. In addition, the thicker the thickness of the epoxy resin was, the higher the breakdown voltage were. Thus, it was confirmed that the GIS coated with epoxy resin on its inner surface could be improved in insulation performance.

Design of a IMVA Single-Phase HTS Power Transformer

  • Kim, Sung-Hoon;Kim, Woo-Seok;Park, Chan-Bae;Hahn, Song-yop;Park, Kyeong-Dal;Joo, Hyeong-Gil;Hong, Gye-Won
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.86-89
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    • 2002
  • In this paper, the design of a IMVA single-phase high temperature superconducting(HTS) power transformer with BSCCO-2223 HTS tapes is presented. The rated voltages of each sides of the transformer are 22.9 ㎸ and 6.6 ㎸, respectively The winding of 1MVA HTS transformer is consisted of double pancake type HTS windings, which have advantages of insulation and distribution of high voltage, and are cooled by subcooled liquid nitrogen of 65K. Four HTS tapes were wound in parallel for the windings of low voltage side and the four parallel conductors are transposed. The design of 1MVA HTS transformer, a shell type core made of laminated silicon steel plate is chosen, and the core is separated with the windings by a cryostat with a room temperature bore. The cryostat made of non-magnetic and non-conducting material and a liquid nitrogen sub-cooling system is designed in order to maintain the coolant's temperature of 65K. For electromagnetic analysis of 1MVA HTS transformer, a finite element method of an axis of symmetry is used. The maximum perpendicular component of magnetic flux density of pancake windings is about 0.15T. And through analyzing the magnetic field distribution, an optimal winding arrangement of 1MVA HTS transformer is obtained.

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Degradation characteristics of 2G HTS tapes with respect to an electrical breakdown

  • Kang, Jong O;Lee, Onyou;Mo, Young Kyu;Kim, Junil;Bang, Seungmin;Lee, Hongseok;Lee, Jae-Hun;Jang, Cheolyeong;Kang, Hyoungku
    • Progress in Superconductivity and Cryogenics
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    • v.17 no.1
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    • pp.48-52
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    • 2015
  • The electrical insulation design for a superconducting coil system is important for developing high voltage superconducting apparatuses. Also, the degraded characteristics of superconducting tapes due to an electrical breakdown should be considered for superconducting coils design. In this study, the degradation characteristics of 2G high temperature superconducting (HTS) tapes were studied with respect to electrical breakdown tests. The degradation tests of 2G HTS tapes were performed with various stabilizer materials. The degradation characteristics of 2G HTS tapes such as critical current(Ic) and index number were observed by performing electrical breakdown tests. It was found that the characteristics such as Ic and index number can be degraded by an electrical breakdown. Moreover, it was concluded that the degradation characteristics of 2G HTS tapes were affected by a stabilizer material and applied breakdown voltage. The cross sectional view of 2G HTS tapes was observed by using a scanning electron microscope (SEM). As results, it is found that the degradation characteristics of 2G HTS tapes are concerned with hardness and electrical resistivity of stabilizer layers.