• Title/Summary/Keyword: Insulating resistance

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Tracking Resistance of Epoxy Mold Insulating Materials by the Rotating Wheel Dip Test (회전윤법에 의한 에폭시 몰드 절연재료의 내트래킹성 평가)

  • Cho, Han-Goo;Yun, Mun-Su;Park, Yang-Kwan
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1590-1592
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    • 2000
  • The time to tracking breakdown of treated filled specimen is longer than untreated filled specimen. And, after the RWDT, the surface of specimen by adding untreated filler appeared heavy erosion. It was found that the addition to surface treated filler. the better tracking resistance. In the RWDT, the breakdown specimen is not affected by the dry flashover voltage. despite the fact that the surface degradation of tracking test has different state on each specimen. This suggests that wet flashover voltage play an important role in evaluating of tracking and erosion on the surface degradation in tracking test. And, the flashover voltage of specimen under wet conditions are greatly affected by the salt concentration and degree of degradation by the RWDT. Because of hydrophobicity and degree of degradation by the RWDT, the flashover voltage of treated filled specimen is higher than that of untreated filled specimen. Different types of specimen may have different hydrophobicity and their surface state under contaminated conditions may not be the same. It is assumed that this phenomenon is related to the decrease in hydrophobicity of the surface of the materials.

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A Study on the Electrical Properties of Ethylene Propylene Rubber by Thermal Treatment and Irradiation (방사선 및 열처리에 의한 에틸렌프로필렌 고무의 전기적 특성에 관한 연구)

  • 이성일
    • Journal of the Korea Safety Management & Science
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    • v.4 no.4
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    • pp.137-146
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    • 2002
  • In order to investigate the effect of irradiation by $^{60}Co-\gamma$rays as well as the e thermal treatment on the dielectric deterioration in ethylene propylene rubber, insulating material for electric cables used in atomic power plants, charging discharging current, residual built- up voltage and dielectric properties are measu discussed in this study. Variance in the characteristic of relative dielectric constant as a function of tem was observed in relatively high dose of irradiation. Since glass transition tem appeared at tens of degree Celsius below zero, the characteristic is attributed orientation polarization. Dielectric loss is generally increased, with increasing d irradiation in the characteristic of dielectric loss as a function of temperature, No d loss by thermal treatment was observed. Dielectric resistance decreases with increa of irradiation in the characteristic of charging current as a function of temperature be considered that dielectric resistance seems to be recovered by thermal treatm characteristic of discharging current as a function of time in the specimen less ir become similar to that of the unirradiated, when thermal treated. A peak is shown residual built- up voltage as a function of time, and the corresponding time of the shorten as increasing dose of irradiation. It is also observed that the corresponding the peak is lengthened by thermal treatment.

Dielectric loss of silicone oils for insulation due to the increase of viscosity (점도증가에 따른 절연용 실리콘유의 유전손실)

  • 이용우;조경순;김왕곤;홍진웅
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.587-593
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    • 1995
  • Silicone oils used insulating substances exhibit the both of organic and inorganic properties, and it has many superior characteristics such as the high thermal resistance and low thermal oxidation level when compared to other insulation oils. In order to investigate the dielectric loss due to the increase of viscosity, silicone oils of viscosity 1, 2, 5[cSt] had been chosen as the specimen and experiment has been performed in the temperature range of -70[.deg. C] - 65[.deg. C] and frequency range of 30 - 1*10$\^$5/[Hz]. As a result, the linear decrease of loss at low frequency region in high temperature was due to the influence of applying frequency, whereas the increase of loss at high frequency region was contributed by electrode's resistance. And increasing viscosity, the activation energy increased from 3.77[kcal/mole] to 7.21[kcal/mole]. The dipole moment of specimen was become clear 1.48 - 2.26[debyel in high temperature region(5 - 65[.deg. C]) and 1.05 - 1.80[debye] in low temperature region (-70 - -25[.deg. C])respectively.

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Tracking Performance Test of Polymer Insulator with Salt Solution which is added Surface Active Agent (계면활성제가 첨가된 염수용액에 따른 폴리머 애자의 트래킹 성능 평가)

  • Cho, Han-Goo;Lee, Un-Yong;Han, Dong-Hee;Kang, Sung-Hwa;Choi, In-Hyuk;Lim, Kee-Joe
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.1
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    • pp.62-67
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    • 2005
  • Recently, polymer insulators that are used for high voltage applications have some advantages such as light weight, small size, vandalism resistance, hydrophobicity and easy making process. During outdoor service of polymer insulators, the surface of the insulating material is frequently subjected to moisture and contamination that lead to dry band arcing. Their tracking resistance, erosion resistance, end sealing and shed design are very important because dry band arcing causes degradation of polymer surface. Aging test to estimate life property of polymer insulator is executed through several international standard such as IEC 61109 and CEA tracking wheel test, but is not getting clear conclusion yet. There are two methods in the diagnosis method of polymer insulator such as off-line and on-line. The diagnosis methods in off-line are external condition analysis by the eye, contaminant analysis on surface, surface analysis, pollution withstand voltage test, power frequency flashover voltage test, lightning impulse flashover test, tensile fracture load test and flexural load test. Polymer material is also investigated it's tracking resistance by adding surface active agent in IEC 587. In this paper, the tracking performance of polymer insulator with salt solution which is added surface active agent. The diagnosis of insulator sample has been analyzed by leakage current and visual examination, STRI guide and thermal image camera.

Ionic Liquid/Styrene-Acrylonitrile Copolymer Nanofibers as Chemiresistor for Alcohol Vapours

  • Kim, Min-Jae;Kang, Eun-Soo;Park, Dong-Wha;Shim, Bong-Sup;Shim, Sang-Eun
    • Bulletin of the Korean Chemical Society
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    • v.33 no.9
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    • pp.2867-2872
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    • 2012
  • SAN/$BMIPF_6$ nanofibers were fabricated by an electrospinning process and used as chemiresistors for sensing alcohol vapours. A hydrophobic and air-stable ionic liquid, $BMIPF_6$, was used to impart electrical conductivity to insulating SAN nanofibers. The effects of $BMIPF_6$ addition on the morphology of the nanofibers were explained in terms of surface tension, viscosity and conductivity. After exposing the SAN/$BMIPF_6$ nanofibers collected on an interdigitated electrode to alcohol vapours (ethanol, 1-propanol and 1-butanol), the resistance of the nanofibers decreased due to adsorption of alcohol molecules. The electrospun SAN/$BMIPF_6$ nanofibers sensor exhibited good sensitivity and reproducibility.

Low-dislocation-density large-diameter GaAs single crystal grown by vertical Bridgman method

  • Kawase, Tomohiro;Tatsumi, Masami;Fujita, Keiichiro
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.6
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    • pp.535-541
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    • 1999
  • Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

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Study on the Strain Measurement in Hot Water (고온수중(高溫水中)에 있어서의 스트레인 측정(測定)에 관(關)한 연구(硏究))

  • Han, Eung-Kyo;Park, Kwang-Kil
    • Journal of the Korean Society for Nondestructive Testing
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    • v.1 no.1
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    • pp.13-21
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    • 1981
  • When we use the strain gauge in the high temperature water, lowering of insulation resistance between test material and gauge is the matter. The lowering makes the measurement unstable and is the primary factor of an error. This study devises the waterproofing method in empirically that has the best insulating property in the hot water($100^{\circ}C$), In this way, we can reach the conclusion that on the condition of a few hours we can measure precisely in the high temperature like normal temperature.

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A Study on the Dielectric Properties of (Sr,Ca)TiO$_3$-based BL Capacitor Materials ((Sr.Ca)TiO$_3$계 BL Capacitor재료의 유전특성에 관한 연구)

  • 정규희;김진사;최운식;김충혁;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.25-28
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    • 1993
  • In this study, the dielectric properties of (Sr$\sub$1-x/Ca$\sub$x/)TiO$_3$+yNb$_2$O$\sub$5/(0.1 x 0.3, 0.004 y 0.008) ceramic capacitor were investigated. The specimen was sintered for 3hr at 1350$^{\circ}C$ in gas(N$_2$) atmosphere. The reduced specimen fared at 1200$^{\circ}C$ in air. The used specimens had the apparent permittivity of 3${\times}$10$^4$∼4${\times}$10$\^$5/, tan$\delta$ of 0.05 -0.2, and insulating resistance of 10$\sub$9/∼10$\^$12/ $\Omega$.cm. The specimens had the stable temperature coefficient of capacitance.

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LOW-DISLOCATION-DENSITY LARGE-DIAMETER GaAs SINGLE CRYSTAL GROWN BY VERTICAL BOAT METHOD

  • Kawase, Tomohiro;Tatsumi, Masami;Fujita, Keiichiro
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.129-157
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    • 1999
  • Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

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Temperature History of Wall Concrete with Heat Insulating Curing Method Subjected to Severly Cold Climate (혹한온도 조건에서의 양생방법 변화에 따른 벽체 콘크리트의 온도이력 특성)

  • Son, Ho-Jung;Han, Sang-Yoon;Cheong, Sang-Hyeon;Ahn, Samg-Ku;Han, Cheon-Goo;Han, Min-Cheol
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2011.11a
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    • pp.51-52
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    • 2011
  • This study is to propose a curing method for a concrete wall structure under severe cold climate. The curing methods of using heated cable, heated panel and insulated form were applied. Results showed that the concrete cured by the heated cable resulted in the highest temperature history and the highest strength development at 28 days. Further, it is believed that the curing methods of the heated panel and insulated form are also recommendable for the resistance of the early frost damage on the concrete in practice.

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