• Title/Summary/Keyword: Insulating resistance

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The Properties of Breakdown and Test for Resistance to Cracking of Power Cable for PL Countermeasure (PL법 대응을 위한 전력케이블의 열 충격 및 절연파괴 특성)

  • Kim, Young-Seok;Shong, Kil-Mok;Kim, Sun-Gu
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2007.11a
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    • pp.349-352
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    • 2007
  • It is impossible to database(DB) the patterns of cable events and cause analysis of faulted cable because the product liability(PL) law have been enforced in Korea, since 2002. In additions, simulation and pattern of cable events are needed for DB system under accelerated deterioration. In this paper, we tested for resistance to nicking of cable below the 22.9kV class due to thermal stresses. This method of exam is following IEC 60811-3-1(Common test methods for insulating and sheathing materials of electric cables). First of all, set the cable in the thermal stress instrument, temperature changed from -20 degree to 120 degree. After thermal stress, we observed a surface crack of cable through microscope and carried out AC withstand voltage test.

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Electrical Properties of Low-Temperature Sintered BaTiO3 Added with Lead Germanate (Lead Germanate를 첨가하여 저온소결한 반도성 BaTiO3의 전기적 성질)

  • 윤상옥;정형진;윤기현
    • Journal of the Korean Ceramic Society
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    • v.28 no.6
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    • pp.451-456
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    • 1991
  • Electrical properties of 0.15 mol% Y2O3 doped semiconducting BaTiO3 ceramics have been investigated as functions of Pb5Ge3O11 contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 1150$^{\circ}C$ to 1300$^{\circ}C$). The low-temperature sintered BaTiO3 ceramics above 1150$^{\circ}C$ show increase of Curie temperature due to the diffusion of Pb+2 ions, and their PTCR effects decrease. As the sintering temperature increases the room temperature resistance decreases due to the growth of the grain, but the room temperature resistance increases with the increase of the Pb5Ge3O11 contents by the formation of thick insulating layers at the grain boundary.

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A study on Stress Corrosion Cracking of Sensor Wire in Thermally Insulated Underground Pipeline (이중보온관 부식감지선의 응력부식파괴에 관한 연구)

  • Choe, Yun-Je;Kim, Jeong-Gu
    • Korean Journal of Materials Research
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    • v.12 no.2
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    • pp.103-111
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    • 2002
  • The thermally insulated underground pipelines have been used for district heating system. The sensor wire embedded in the insulation was used for monitoring the insulating resistance between the sensor wire and the pipe. The resistance measurement system detects corrosion of steel pipe under insulation. The corrosion and stress corrosion cracking(SCC) characteristics of sensor wire in synthetic ground water were investigated using the electrochemical methods and constant load SCC tests. The polarization tests were used to study the electrochemical behavior of sensor wire. The sensor wire was passivated at temperatures ranging from 25 to $95^{\circ}C$. However, the applied sensing current larger than passive current resulted in breakdown of passive film. The constant load SCC tests were performed to investigate the effects of applied current and load on the fracture behavior. Stress-corrosion cracks initiated at pits that were produced by sensing current. The growth of the pit involves a tunnelling mechanism, which leads to ductile fracture.

Development of Al plasma assisted chemical vapor deposition using DMEAA (DMEAA를 이용한 알루미늄 PACVD법의 개발)

  • 김동찬;김병윤;이병일;김동환;주승기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.10
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    • pp.98-106
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    • 1996
  • A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

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Synthesis and Physical Property of Multi-Functional Siloxane Protective Coating Materials Applicable for Electronic Components

  • Kim, Cheol Hyun;Cho, Hyeon Mo;Lee, Myong Euy
    • Bulletin of the Korean Chemical Society
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    • v.35 no.6
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    • pp.1665-1669
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    • 2014
  • Four multialkoxy-functionalized siloxane base-polymers (BP-1~4) were synthesized through either hydrosilylation or condensation reactions in order to prepare multi-networked siloxane polymers having appropriate physical properties for protective coating in fabrications of electronics. Formulations of 4 base-polymers gave coating materials A and B. Product A showed well-controlled flowing and leveling properties, and product A-2 was successfully applied to protective insulating coating for junction areas of connectors and chips in PDP controller. Tack free time, extrusion rate, dielectric breakdown voltage, hardness, thermal stability, water resistance and flame resistance of products A and B were examined.

Dielectric Characteristics of Silicone Rubber for Insulators (애자용 실리콘 고무의 유전특성)

  • 이상민;신현택;변두균;신종열;이창형;이충호;홍진웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.451-454
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    • 2002
  • A silicone rubber has been used so many dielectric materials for extremely high voltage(EBW) electric appliances. The reason why it is very stable in the thermal, mechanical and electrical environment. In this paper, we have studied the dependence of dielectric characteristics of silicone rubber on frequency-dependent variation. The dielectric characteristics were measured in the temperature range of 25[$^{\circ}C$] and 150[$^{\circ}C$]. Also we measured in the voltage range of 1[V] and 20[V]. The energy of activation on the dielectric loss obtained 2.44[kcal/mol], 2.1[kcal/mol], 1.63[kcal/mol] and 1.57[kcal/mol] by appling respectively.

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Dielectric Characteristic Analysis of Thermally Aged Insulating Oil for Transformers (열적열화된 변압기용 절연유의 유전특성 분석)

  • Jung, J.W.;Lee, B.S.;Song, I.K.;Park, J.S.;Kwak, H.R.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1594-1596
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    • 2001
  • The purpose of this paper is to provide the fundamental data which can be used for the design of pole transformers. For the purpose, electrical characteristics of aged mineral oil and silicone oil were analyzed by comparing with the results of virgin ones. For the experiment, an oil bath which can keep constant temperature was constructed to thermally deteriorate the specimens. And transformer materials were put together in the bath according to the their ratio in weight in the pole transformer. And the parameters such as relative permittivety, tan$\delta$ and specific resistance were measured. As a results, the permittivity of silicone oil was higher than that of mineral oil, and its decreasing rate with temperature was also higher. In addition, it was found that tan$\delta$ and specific resistance of virgin and aged oil began to differ at similar temperature.

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Controllable Growth of Single Layer MoS2 and Resistance Switching Effect in Polymer/MoS2 Structure

  • Park, Sung Jae;Chu, Dongil;Kim, Eun Kyu
    • Applied Science and Convergence Technology
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    • v.26 no.5
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    • pp.129-132
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    • 2017
  • We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

The development of highly functional paints improving NIR reflectance by investigating silica particles size for pigment mixing (안료배합용 실리카 입자사이즈에 따른 근적외선 반사율을 향상시킨 고기능성 도료 제조)

  • Eunseok Woo;Yunseok Noh;Jinho Lee;Yong-Wook Choi;Bora Kim
    • Journal of the Korean institute of surface engineering
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    • v.57 no.2
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    • pp.98-104
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    • 2024
  • In order to overcome the urban heat island effect, highly functional paint is attracting attention as a promising means by shielding heat on the structure (building) surface. When a paint was prepared containing nano-sized silica particles, the heat-insulating performance was relatively higher than that of paints with other sizes. In addition, developed paints showed enhanced properties such as chemical resistance and abrasion resistance test because of the presence of nano-sized silica included in functional paint.

Variation in Properties of Seawater Flooded and Non-Flooded CSPE (해수범람 전·후의 CSPE 특성변화)

  • Lee, Jeong-U;Kim, In-Yong;Ji, Seong-Hyun;Jeon, Hwang-Hyun;Shin, Yong-Deok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.12
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    • pp.1724-1729
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    • 2015
  • Chlorosulfonated polyethylene (CSPE) was not flooded seawater and flooded seawater & freshwater for 5 days, respectively, and these samples are referred to as BSF(before seawater flooding) and ASFF(after seawater & freshwater flooding), respectively. The apparent density, dissipation factor, relative permittivity, melting temperature, dielectric breakdown time and increased time of applied voltage are higher than those of BSF, but the insulating resistance, dielectric strength, percent elongation and glass transition temperature of ASFF are lower than those of BSF. The differential temperature of those is $0.026{\sim}0.028(^{\circ}C)$ after AC and DC voltage is applied to ASFF, respectively, and the differential temperature of those is $0.013{\sim}0.037(^{\circ}C)$ after AC and DC voltage is applied to BSF, respectively. In the case AC and DC voltage is applied to ASFF as well as BSF, the variations in temperature of AC voltage are higher than those of DC voltage. It is investigated that dielectric loss due to dissipation factor ($tan{\delta}$) is related to electric dipole conduction current. It is certain that the ionic (electron or hole) leakage current was increased by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$, those are related to cured atoms of O and S that relatively increased after seawater flooding.