• Title/Summary/Keyword: Insulating layer

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Fabrication of Organic Thin-Film Transistor Using Vapor Deposition Polymerization Method (Vapor Deposition Polymerization 방법을 이용한 유기 박막 트렌지스터의 제작)

  • 표상우;김준호;김정수;심재훈;김영관
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.190-193
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    • 2002
  • The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

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A Syudy on the High Temprerties of the 5Layer Functionally Gradient Thermal Barrier Coating (5층열장벽 피막의 고온 물성에 관한연구)

  • Han, J. C.;Jung, C.;Song, Y. S.;Yoon, J. K.;Lo, B. H.;Lee, K. H.
    • Journal of the Korean institute of surface engineering
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    • v.31 no.1
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    • pp.12-23
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    • 1998
  • The Thermal Barrier Coating(TBC) has been used to improve the heat barrier and tribological properties of the aircraft engine and the automobile engine in high temperature. Especially, the high temperature tribological propertied of the cylinder haed and the piston crown of diesel engine was emphasized. Therefore, the purpose of this work was to evaluate the microstructure, tribological propeer in high tempearmal shock resistance and bonding strength of five layer functionally gradient TBC for the applications. The five layerwere composed with 100% ceramic insulating later, 75(ceramic):25 (metal) layer, 50:50 layer, 25:75 layer and 100% metal bonding layer to redude the thermal stress. the YSL and MSL poweders were the insulation ceramics powers. The NiCrAly, Inconel625 and SUS powders were the bonding and mixingg powders for plasma spray process. According to the result of high temperature wear test, the wera resistance of YSZ/NiCrAlY siytem was most out standing at 600 and $800^{\circ}C$. At $400^{\circ}C$, the wear resistance of YSZ/Inconel system was better than others. Wear volume at other temperature because of the low temperature degration of zirconia. The thermal shock mechanism of 5 later is the vertical crack gegration in insulating layer. this means that the initial cracks were generated in the top layer, and then developed into the composite layers during thermal shock test. Finally, these cracks werereached to the interface of coating and substrate and also, these vertioal cracks join with the horizontal cracks of the each layers. The bonding strength of YSZ/NiCrAlY and YSZ/Inconel 5 layer system is better than other 5layer systems. The theramal shock resistance of thermal barrier coating s with 5 layer system is better than that of 3 layers and 2 layers.

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Adhesion and Recovery of Semiconductive Silicone Rubber by Oxygen Plasma Treatment (산소 플라즈마 처리된 반도전성 실리콘 고무의 회복현상 및 접착특성)

  • Lee, Ki-Taek;Hwang, Sun-Mook;Hong, Joo-Il;Seo, Yu-Jin;Hwang, Cheong-Ho;Huh, Chang-Su
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.147-148
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    • 2005
  • In this work, recovery of semiconductive silicone rubber on oxygen plasma treatment was investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, surface methyl groups is removed and an oxidized layer containing Si atoms bound to 3 or 4 oxygens appears. The surface is later covered by a very thin layer due to migration of low-molecular-weight components from the bulk, resulting in decreasing the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber these results are probably due to reorientation of polar groups or migration of low-molecular-weight.

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Tunneling Magnetoresistance in Si/$SiO_2$/NiFe/$Al_2$$O_3$/Co Thin Films (Si/$SiO_2$/NiFe/$Al_2$$O_3$/Co 박막의 투과자기저항 특성 연구)

  • 현준원;백주열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.11
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    • pp.934-940
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    • 2001
  • Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

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Variations in Tunnel Electroresistance for Ferroelectric Tunnel Junctions Using Atomic Layer Deposited Al doped HfO2 Thin Films (하부전극 산소 열처리를 통한 강유전체 터널접합 구조 메모리 소자의 전기저항 변화 특성 분석)

  • Bae, Soo Hyun;Yoon, So-Jung;Min, Dae-Hong;Yoon, Sung-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.6
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    • pp.433-438
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    • 2020
  • To enhance the tunneling electroresistance (TER) ratio of a ferroelectric tunnel junction (FTJ) device using Al-doped HfO2 thin films, a thin insulating layer was prepared on a TiN bottom electrode, for which TiN was preliminarily treated at various temperatures in O2 ambient. The composition and thickness of the inserted insulating layer were optimized at 600℃ and 50 Torr, and the FTJ showed a high TER ratio of 430. During the heat treatments, a titanium oxide layer formed on the surface of TiN, that suppressed oxygen vacancy generation in the ferroelectric thin film. It was found that the fabricated FTJ device exhibits two distinct resistance states with higher tunneling currents by properly heat-treating the TiN bottom electrode of the HfO2-based FTJ devices in O2 ambient.

Study on the Streaming Electrification of Insulating oil Under Electricfield (전계가 가해진 절연유의 유동대전 특성 고찰)

  • 허창수;정중일
    • Electrical & Electronic Materials
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    • v.10 no.4
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    • pp.334-341
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    • 1997
  • Streaming electrification on insulating paper and pressboard under D.C. and A.C. electric field was investigated by using paper tubes and oil circulation apparatus. At first, flowing of static charges as measured with no electric field. As the temperature of oil increased, the measured current curve hows peak. As the velocity increased, it shows increasing exponential curve. Then, we applied A.C. and D.C. electric field on paper tube and the current from relaxation tank to earth was measured, which other factors such as temperature and velocity were varied like case of no electric field. The ions in oil carry the charges. So electric field makes asymmetry effect, and electrophoretic effect on ions in oil. We find that as the electric field intensity increased, the charges which were made by electric double layer were increased. The charge vs. velocity curve made peak point at a velocity.

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Adhesion and Electrical Performance by Plasma Treatment of Semiconductive Silicone Rubber (반도전성 실리콘 고무의 플라즈마 표면처리에 따른 접착특성과 절연성능)

  • Hwang, Sun-Mook;Lee, Ki-Taek;Hong, Joo-Il;Huh, Chang-Su
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.450-456
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    • 2005
  • In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

The Effect of Plasma Treatment on Surface Properties and Adhesion Characteristics of semiconductive Silicone Rubber (반도전성 실리콘 고무의 표면 특성과 접착특성에 미치는 플라즈마 처리의 영향)

  • Hwang, Sun-Mook;Hong, Joo-Il;Hwang, Cheong-Ho;Huh, Chang-Su
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.254-255
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    • 2005
  • In this work, the effects of plasma treatment on surface properties of semi conductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, semiconductive silicone rubber surfaces treated with plasma discharge led to and increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. these results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semi conductive silicone rubber.

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Evaluation of water absorption and thermal insulation properties of flooring board (플로어링보드의 흡수성 및 단열성 평가)

  • Park, Cheul-Woo;Lim, Nam-Gi;Lee, Dong-Gun;Jo, Young-Bin
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2021.11a
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    • pp.178-179
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    • 2021
  • Comparing the absorption volume of test pieces immersed over time in room temperature moisture with weight, WF absorbed about 40% more than PLAIN, and PLAIN stopped absorbing after 10 minutes, but WF continued to absorb. It is thought that the woven fabric layer of the core material continued to absorb moisture. In the heat transfer test, the test piece to which only WF was applied had a temperature difference of about 2℃ compared to PLAIN, and when the insulating liquid was sprayed, there was a difference in heat transfer properties of up to 5℃. This is judged to have low heat transfer properties of the basic woven fabric, but the heat insulating liquid also further reduces heat transfer properties.

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A Study on charge accumulation and relaxation phenomena by D.C energization in insulating oil (직류 전계 인가에 따른 절연유의 전하 축적 및 완화 현상에 관한 연구)

  • Kim, C.W.;Lim, H.C.;Kim, Y.W.;Shin, T.H.;Huh, C.S.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1633-1635
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    • 1996
  • This phenomena of streaming-electrification is generated between solid and liquid boundary called electric double-layer which is generated by potential difference. A charge separation at interfaces between a moving fluid and a solid boundary can give rise to the generation of substantial electric field and at last these can give rise ta insulating failure. Therefore injection of the adverse-charge in streaming-electrified insulating oil to eliminate the accumulation charge and its related phenomena was investigated.

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