• Title/Summary/Keyword: Insulating layer

검색결과 356건 처리시간 0.031초

파카의 보온성에 따른 착용감에 관한 연구 (The Effects of Parka on Subject Wear Sensation as to Thermal Resistance)

  • 이윤정;이순원
    • 한국의류학회지
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    • 제13권3호
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    • pp.295-303
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    • 1989
  • This study is to measure the thermal resistance of 7 types of Parka of different materials with thermal manikin and to compare their effects on physiological responses & subjective wear sensations. Following are the results obtained from the experiments 1) From the thermal manikin experiment, i) As an outer layer, although not significant, water proof fabric was warmer than water proof-vapor permeable fabric. ii) In case of insulating material, down was better for thermal resistance than polyester wadding of the same thickness. Moreover, as the down was thicker, it had more efficiency in thermal resistance. However, the marginal efficiency of thickness was found to be decreasing. 2) From the male-subject experiments, i) Chest temperature, mean skin temperature & microclimate temperature showed the same results on thermal resistance as those of the thermal manikin experiment. ii) Only during rest periods, there was a significant difference among 5 insulating materials in the sense of microclimate humidity. The almost same conclusion was obtained from the above experiments. Even the outer layer did not significantly affect thermal resistance & subjective wear sensation, insulating materials had a significant influence upon them. But in case of 3.5 cm down, it gave less comfortable than that of the thinner. Therefore the optional one for the best comfort & thermal resistance among 7 combinatins is the outer layer of water proff-vapor permeable & insulating material of 2.1 cm down.

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구리기둥범프 용 전해도금 층 제어 (Thickness Control of Electroplating Layer for Copper Pillar Tin Bump)

  • 문대호;홍상진;박종대;황재룡;소대화
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2011년도 추계학술대회
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    • pp.903-906
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    • 2011
  • 고밀도집적을 위한 구리기둥주석범프(CPTB)의 제작공정에 흔히 전기도금과 무전해도금이 적용된다. CPTB는 약 $100{\mu}m$ 정도의 피치를 갖도록 먼저 구리도금 층을 전착시킨 다음, 구리의 산화 억제를 위하여 구리기둥 주위에 주석을 입혀 제작한다. 이 과정에서 구리도금 층 두께를 균일하게 형성하는 일은 매우 민감하고 어렵지만 중요한 일이다. 이를 위하여 구리도금 전극 사이에 전류분포 제어를 위한 절연 막(절연게이트)을 형성하여 도금 층의 두께분포를 조절하는 실험을 하였다. 원통형 도금 조에서 중심부를 열어 전류를 흘려주고, 그 외 부분은 가장자리 끝까지 막고 전류를 차단하여 두께분포 변화를 확인하였다.

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Experimental study on shear, tensile, and compression behaviors of composite insulated concrete sandwich wall

  • Zhang, Xiaomeng;Zhang, Xueyong;Liu, Wenting;Li, Zheng;Zhang, Xiaowei;Zhou, Yilun
    • Advances in concrete construction
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    • 제11권1호
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    • pp.33-43
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    • 2021
  • A new type of composite insulated concrete sandwich wall (ICS-wall), which is composed of a triangle truss steel wire network, an insulating layer, and internal and external concrete layers, is proposed. To study the mechanical properties of this new ICS-wall, tensile, compression, and shearing tests were performed on 22 specimens and tensile strength and corrosion resistance tests on 6 triangle truss joints. The variables in these tests mainly include the insulating plate material, the thickness of the insulating plate, the vertical distance of the triangle truss framework, the triangle truss layout, and the connecting mode between the triangle truss and wall and the material of the triangle truss. Moreover, the failure mode, mechanical properties, and bearing capacity of the wall under tensile, shearing, and compression conditions were analyzed. Research results demonstrate that the concrete and insulating layer of the ICS-wall are pulling out, which is the main failure mode under tensile conditions. The ICS-wall, which uses a graphite polystyrene plate as the insulating layer, shows better tensile properties than the wall with an ordinary polystyrene plate. The tensile strength and bearing capacity of the wall can be improved effectively by strengthening the triangle truss connection and shortening the vertical distances of the triangle truss. The compression capacity of the wall is mainly determined by the compression capacity of concrete, and the bonding strength between the wall and the insulating plate is the main influencing factor of the shearing capacity of the wall. According to the tensile strength and corrosion resistance tests of Austenitic stainless steel, the bearing capacity of the triangle truss does not decrease after corrosion, indicating good corrosion resistance.

철계 연자성 분말용 하이브리드 절연 코팅막 개발 (Development of Hybrid Insulating Coating for Fe-based Soft Magnetic Powder)

  • 김정준;김선겸;김영균;장태석;김휘준;김용진;최현주
    • 한국분말재료학회지
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    • 제28권3호
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    • pp.233-238
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    • 2021
  • Iron-based amorphous powder attracts increasing attention because of its excellent soft magnetic properties and low iron loss at high frequencies. The development of an insulating layer on the surface of the amorphous soft magnetic powder is important for minimizing the eddy current loss and enhancing the energy efficiency of high-frequency devices by further increasing the electrical resistivity of the cores. In this study, a hybrid insulating coating layer is investigated to compensate for the limitations of monolithic organic or inorganic coating layers. Fe2O3 nanoparticles are added to the flexible silicon-based epoxy layer to prevent magnetic dilution; in addition TiO2 nanoparticles are added to enhance the mechanical durability of the coating layer. In the hybrid coating layer with optimal composition, the decrease in magnetic permeability and saturation magnetization is suppressed.

케이블 접속재 부분방전 특성에 미치는 보이드의 영향 (Influence of Partial Discharge Properties due to Void in Cable Joint Parts)

  • 신종열;홍진웅
    • 한국안전학회지
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    • 제18권3호
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    • pp.69-74
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    • 2003
  • To investigate the partial discharge and electric field distribution in cable joint parts, we measured the partial discharge and electric field in specimen. The specimens which cross-linked polyethylene(XLPE) and ethylene propylene diene ethylene(EPDM) are used to insulating material for underground cable md cable jointing parts. The polymers are used to insulating material in switchgear which is a kind of transformer equipment and in ultra-high voltage cable. Its using is increasing gradually, the electrical insulation properties are not only excellent but also mechanical property is excellent. And because it is possible to be made void of several type in insulator while it is produced, which the electrical field distribution is changed by void, it has a critical influence to insulator performance. The underground cable is connecting by the jointing material, insulating breakdown and the electric ageing which are caused by several mixing impurity and the damage of cable insulator layer, which reduced the life of cable while intermediate joint kit is connected. Therefore, the computer simulation is used to estimating insulator performance, XLPE is used to the insulating material of ultra-high voltage cable and EPDM is used to insulator layer in joint material kit, and which are produced as specimen. And it is analyzed the electric field concentrating distribution and partial discharge by modeling of computer simulation in void and cable joint kit.

Semi-insulation Behavior of GaN Layer Grown on AlN Nucleation Layer

  • 이민수;김효정;이현휘
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.132-132
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    • 2011
  • The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

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전도성 나노 구리잉크의 잉크젯 프린팅 유변학적 거동 및 광소결 특성 평가 (Rheological behavior and IPL sintering properties of conductive nano copper ink using ink-jet printing)

  • 이제영;이도경;남산;최정훈;황광택;김진호
    • 한국결정성장학회지
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    • 제30권5호
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    • pp.174-182
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    • 2020
  • 최근 잉크젯 프린팅 기술을 이용한 인쇄전자 분야가 차세대 기술로서 각광받고 있으며, 복수의 프린트 헤드(head)로부터 다양한 잉크 형태의 소재를 정밀하게 출력하여 적층할 수 있는 3D 프린팅 기술에 관한 연구가 활발하게 진행되고 있다. 본 연구에서는 잉크젯 3D 프린팅 기술을 이용하여 광경화성 실리카 잉크와 PVP가 첨가된 나노 구리 잉크로 절연층과 전도층의 복합구조체를 제작하였다. 프린팅 구동 조건과 잉크의 유변학적 거동을 최적화하여 정밀한 광경화 실리카 절연층을 적층 제조하였으며, 절연층의 저항은 2.43 × 1013 Ω·cm의 값을 나타내었다. 광경화 실리카 절연층 위에는 액적 간격 제어를 통하여 나노 구리 전도층을 프린팅하였다. PVP 첨가 나노 구리 잉크의 소결은 IPL 광소결 공정을 이용하였으며, 어닐링 온도와 인가 전압 변화에 따른 전기적, 기계적 특성을 확인하였다. 100℃ 어닐링 온도와 700 V IPL 광소결 조건에서 PVP가 첨가된 나노 구리 전도층의 저항은 29 μΩ·cm으로 매우 낮으며, 광경화 실리카 절연층과의 접착력은 매우 우수한 것으로 확인하였다.

산소 플라즈마 처리에 의한 반도전-절연 실리콘 고무의 접착 특성 (Adhesion Characteristics of Semiconductive and Insulating Silicone Rubber by Oxygen Plasma Treatment)

  • 이기택;허창수
    • 한국전기전자재료학회논문지
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    • 제19권2호
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    • pp.153-157
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    • 2006
  • In this work, the effects of plasma treatment on surface properties of semiconductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy (XPS) and contact angles, The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths, The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds(SiOx, x=3${\~}$4) increased, It is thought that semiconductive silicone rubber surfaces treated with plasma discharge led to an increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. However, the oxygen plama for 20 minute produces a damaged oxidized semiconductive silicone rubber layer, which acts as a weak layer producing a decrease in T-peel strength, These results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semiconductive silicone rubber.

무전해 니켈 도금을 이용한 절연기판상의 미세전도성 패턴 제조 (Microfabrication of Micro-Conductive patterns on Insulating Substrate by Electroless Nickel Plating)

  • 이봉구;문준희
    • 대한금속재료학회지
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    • 제48권1호
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    • pp.90-100
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    • 2010
  • Micro-conductive patterns were microfabricated on an insulating substrate ($SiO_2$) surface by a selective electroless nickel plating process in order to investigate the formation of seed layers. To fabricate micro-conductive patterns, a thin layer of metal (Cu.Cr) was deposited in the desired micropattern using laser-induced forward transfer (LIFT). and above this layer, a second layer was plated by selective electroless plating. The LIFT process. which was carried out in multi-scan mode, was used to fabricate micro-conductive patterns via electroless nickel plating. This method helps to improve the deposition process for forming seed patterns on the insulating substrate surface and the electrical conductivity of the resulting patterns. This study analyzes the effect of seed pattern formation by LIFT and key parameters in electroless nickel plating during micro-conductive pattern fabrication. The effects of the process variables on the cross-sectional shape and surface quality of the deposited patterns are examined using field emission scanning electron microscopy (FE-SEM) and an optical microscope.

$Al_2O_3$ 게이트 절연막을 이용한 공핍형 p-채널 GaAs MOSFET의 제조 (Fabrication of a depletion mode p-channel GaAs MOSFET using $Al_2O_3$ gate insulator)

  • 전본근;이태헌;이정희;이용현
    • 센서학회지
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    • 제8권5호
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    • pp.421-426
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    • 1999
  • 본 논문에서는 반절연성 GaAs(semi-insulating GaAs) 기판위에 $Al_2O_3$ 절연막이 게이트 절연막으로 이용된 공핍형모드 p-채널 GaAs MOSFET (depletion mode p-channel GaAs MOSFET)를 제조하였다. 반절연성 GaAs 기판위에 $1\;{\mu}m$의 GaAs 버퍼층(buffer layer), $4000\;{\AA}$의 p형 GaAs 에피층(epi-layer), $500\;{\AA}$의 AlAs층, 그리고 $50\;{\AA}$의 캡층(cap layer)을 차례로 성장시키고 습식열산화시켰으며, 이를 통하여 AlAs층은 완전히 $Al_2O_3$층으로 산화되었다. 제조된 MOSFET의 I-V, $g_m$, breakdown특성 측정을 통하여 AlAs/GaAs epilayer/S I GaAs 구조의 습식열산화는 공핍형 모드 p-채널 GaAs MOSFET를 구현하기에 적합함을 알 수 있다.

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