• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.153-154
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• 2008

변전기기의 주요 절연매질인 절연유 및 $SF_6$ 가스에서 절연불량으로 부분방전이 발생할때 방사되는 전자기파 특성을 측정, 분석 하였다. 부분방전 발생기구로 부유전극을 제작하여 실험하였으며 부분 방전에 의한 전자기파 신호의 특성을 분석한 결과 변압기 주 절연물인 절연유에서 발생하는 부분방전신호가 크고 높은 주파수의 신호가 발생하였고, 가스절연개폐장치 주 절연물인 $SF_6$ 가스에서 발생하는 부분방전신호도 비교적 높은 주파수 신호가 발생하였다. 본 분석결과는 변전소 주요 설비인 변압기 및 가스절연개폐장치에서 발생가능한 절연이상을 진단하기 위한 전자기파를 이용한 부분방전 분석기술 개발에 응용할 예정이다.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.101-102
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• 2008

SF6 widely used as insulating gas is rising as the environment problem. For decreasing this greenhouse gas, electrical breakdown characteristics of vacuum with air are studied in non-uniform field. The gap of needle to plane was 0.5mm. The pressure of vacuum the range of 10^-4${\sim}$10^-5torr. The diameter of a plane made of the stainless steel is 150mm. As a result of the experiment, the breakdown voltage is increased about degree of vacuum increased. The electrode material influenced breakdown voltage in vacuum.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.62 no.1
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• pp.6-11
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• 2013

In this paper, the temperature characteristics of mold transformer for the distribution power system have been analyzed by using computational fluid dynamics(CFD). The model has been modeled by coil, cores, insulating materials and frames about 3MVA grade mold transformer and analyzed the temperature distribution of the structure with a heat fluid. The fluid, which is incompressible ideal gas, is analyzed as a turbulent flow phenomenon on the assumption that it is natural cooling of transformer cooling system. Through this study, by examining the temperature distribution and hot-spot of the structure field of the mold transformer, cooling design and temperature distribution information, which are demanded for designing are estimated.

• Journal of the Korean Applied Science and Technology
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• v.19 no.4
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• pp.335-338
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• 2002

A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. All-organic thin-film transistors with a stacked-inverted top-contact structure were fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performances with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for all-organic thin-film transistors are possible by using the proposed method without vacuum breaking.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.776-782
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• 1996

The electrical properties of vapor deposition polymerized polymide thin films for getting an in-line system with manufacturing process of semiconductor device, have been studied. Polyimide thin films fabricated by vapor deposition polymerization(VDP) method based on PMDA and 4,4'-DDE monomer were confirmed by FT-IR spectra. It is found that the major conduction carriers of thin films are ions, and the hopping length of ions is almost same with monomer length at the temperature over 120.deg. C through the analysis of electrical conduction mechanism. Also, The activation energy is about 0.69 eV at the temperature of >$30^{\circ}C$ - >$150^{\circ}C$ and it is shown that the resistivity at which thin films can be used as an insulating film between layers of semiconductor device, is 3.2*10$^{15}$ .ohm.cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.77-80
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• 1998

Recently, extending the local broadcasting and increasing lots of informations. The low-loss communication cable is required in proportion as frequency .The reason of transportation loss causes to using the high frequencies like hundreds of MHz or decades of GHz. For the low transportation loss. It is required the developing-technology of foaming and the high foamed insulator with the dielectric ratio of the nearest to 1. Therefor, there is the purpose of developing the insulating materials for the low dielectric ratio. Also it is important to measure the attenuation, which is one of the important parameters.sa the evaluation of transportation characteristic with frequency in the communication cable. In this paper,the result showed that the dielectric ratio(1.4) of the nearest to 1 and low attenuation with high frequency were very related to the transportation and reflection characteristics such as propagation velocity (82.27%). Delay time and voltage standing wave ratio(VSWR).

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.103-111
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• 2002

The thermally insulated underground pipelines have been used for district heating system. The sensor wire embedded in the insulation was used for monitoring the insulating resistance between the sensor wire and the pipe. The resistance measurement system detects corrosion of steel pipe under insulation. The corrosion and stress corrosion cracking(SCC) characteristics of sensor wire in synthetic ground water were investigated using the electrochemical methods and constant load SCC tests. The polarization tests were used to study the electrochemical behavior of sensor wire. The sensor wire was passivated at temperatures ranging from 25 to $95^{\circ}C$. However, the applied sensing current larger than passive current resulted in breakdown of passive film. The constant load SCC tests were performed to investigate the effects of applied current and load on the fracture behavior. Stress-corrosion cracks initiated at pits that were produced by sensing current. The growth of the pit involves a tunnelling mechanism, which leads to ductile fracture.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.127-132
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• 1996

We measured photoreflectance spectrum characteristics of InGaAs grown by MBE method on semi-insulating GaAs. The PR signal splitting of substate and epilayer was observed. The band gap energy was about 1.40 eV. It make to 8 meV difference when it is fitted by Pan's equation. The reason is stress on the interface, which is due to lattice mismatch between epilayer and substate . We became to know that reason influence crystalline on growing sample. In InGaAs epilayer, temperature dependency is low. The efficiency of photo absorption is high and activate over 200K. In this case when it is annealed at $400^{\circ}C$ below growing temperature, PR signal splitting is remarkable and crystalline is inhanced.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.98-106
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• 1996

A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.239-245
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• 2002

In this work, in order to realize the possible defects at the cable joint interface, four different types of artificial defects are provided : conducting, insulating substances, void and scratches. The analysis related to the PD patterns has been performed by means of conventional Phase Resolved Partial Discharge Analysis (PRPDA) and Chaotic Analysis of Partial Discharge (CAPD) as well which was proposed by our previous communication. As a result, it could be pointed out that each defect has shown particular characteristics in its pattern respectively and that the nature of defect causing partial discharge could be identified more distinctively when the CAPD is combined with the conventional statistic method, PRPDA.