• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.11
• /
• pp.923-932
• /
• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Asian Journal of Turfgrass Science
• /
• v.25 no.2
• /
• pp.133-137
• /
• 2011

Winterkill can be defined as any injury including freeze stress kill, winter desiccation, and low temperature disease to turfgrass plants that occurs during the winter period. The major damages from winterkill were low temperature kill, crown hydration, and winter desiccation. Low temperature kill is caused by air and soil temperature. Soil temperature affect more severe to turfgrass than air temperature because low soil temperature cause fetal damage to turfgrass crown. Crown hydration is a form of winter injury in which intercellular water within the plant freezes and causes physical injury to the cell membrane and wall. This is eventually resulted in dehydration of cell. Winter desiccation is the death of leaves or whole plants due to drought during the winter period. To reduce winterkill damage, cultivar selection is very important. If changing cultivar is not allowed, cold temperature hardiness needs to be increased by providing nutrients especially phosphorus and potassium in the late fall. Turf cover is effective way to reduce winterkill damage. Remaining snow is positive process to reduce winterkill damage by insulating soil temperature. The previous researches reported many materials as turf cover such as straw, polypropylene, polyester, and wood mat. Aeration and topdressing is one of the process against winterkill. Both methods are mainly conducted to reduce thickness of thatch layer. In recent, relatively new materials called black or winter topdressing sand are used to protect soil temperature from low air temperature and thaw ice crystal that may remain in soil.

• Journal of Korean Society of Steel Construction
• /
• v.18 no.5
• /
• pp.543-551
• /
• 2006

Cold-formed steel studs that are being used as load-bearing members of wall panels for steel houses have a problem with their insulation due to the heat bridging of their web. Some additional thermal insulating materials should be used. To solve this problem, the new-concept hybrid stud, which consists of a galvanized steel sheet (t = 1.0 m - 12.0 m) and a GFRP panel (t = 4.0-6.0 mm), has recently been developed. An investigation on the structural behavior and the strength capacity of this new hybrid stud has been conducted so that it can be used in load-bearing wall panels of residential buildings. This paper describes the axial compression-torsion test results of the hybrid studs under both axial compression and torsion using ATTM. The main factors of the test were the stud length, the magnitude of the initial compressive force, and the loading method of the monotonic or cyclic loading. The torsion was applied increasingly while the initial compression was kept constant to the failure of the hybrid section. The advanced analysis results obtained form the finite element procedure that considered the material properties of the high-strength galvanized steel and the GFRP were compared with the test results for verification.

• Fire Science and Engineering
• /
• v.26 no.3
• /
• pp.106-111
• /
• 2012

In this study, EIFS (Exterior insulation finish system) of exterior cladding was applied Cone calorimeter test to confirm the effect of flame retardant. As a results, the initial ignition points in accordance with the coated form and concentration of the flame retardant was delayed. But flame resistant treatment of EIFS cladding to control the fire will not affect confirmed that. In addition, EIFS that uses high-density and low-density due to difference in the density of the impact of the fire was no difference. The exterior of the ignition experiment occurred before and after 40 seconds, heat release rate to 100 seconds appears to occur about 90 % compared with the other exterior wall materials, the initial fire spread very fast was confirmed. EIFS cladding in order to prevent the spread of fire in the application of EIFS legally use is limited by the use of the building. And flame spread can be prevented, such as a vertical outer wall compartment measures are urgently needed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.96-97
• /
• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Journal of the Korean Vacuum Society
• /
• v.19 no.6
• /
• pp.475-482
• /
• 2010

Polycrystalline NiO thin films were deposited on glass substrate by RF magnetron sputtering using only Ar as a plasma sputter gas. based on the analysis of x-ray diffraction (XRD), NiO films had a polycrystalline cubic (NaCl type) structure. NiO thin films grown below and above $200^{\circ}C$ showed preferred orientation of (111) and (220) respectively. It showed colossal change in electrical resistivity as much a ${\sim}10^7$ order form an insulating state of $105\;{\Omega}cm$ below $200^{\circ}C$ to a conducting state of $10^{-2}{\sim}10^{-1}\;{\Omega}cm$ above $300^{\circ}C$ such a Mott metal-insulator transition (MIT) in polycrystalline.

• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.3
• /
• pp.33-38
• /
• 2021

Recently, rollable and foldable displays are attracting great attention in the flexible display market due to their excellent form factor. To predict and prevent the mechanical failure of the display panels, it is essential to accurately understand the mechanical properties of brittle SiN_x thin films, which have been used as an insulating film in flexible displays. In this study, tensile properties of the ~130 nm- and ~320 nm-thick SiN_x thin films were successfully measured by coating a ~190 nm-thick organic nano-support-layer (PMMA, PS, P3HT) on the fragile SiN_x thin films and stretching the films as a bilayer state. Young's modulus values of the ~130 nm and ~320 nm SiN_x thin films fabricated through the controlled chamber pressure and deposition power (A: 1250 mTorr, 450 W/B: 1000 mTorr, 600 W/C: 750 mTorr, 700 W) were calculated as A: 76.6±3.5, B: 85.8±4.6, C: 117.4±6.5 GPa and A: 100.1±12.9, B: 117.9±9.7, C: 159.6 GPa, respectively. As a result, Young's modulus of ~320 nm SiN_x thin films fabricated through the same deposition condition increased compared to the ~130 nm SiN_x thin films. The tensile testing method using the organic nano-support-layer was effective in the precise measurement of the mechanical properties of the brittle thin films. The method developed in this study can contribute to the robust design of the rollable and foldable displays by enabling quantitative measurement of mechanical properties of fragile thin films for flexible displays.