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http://dx.doi.org/10.5757/JKVS.2010.19.6.475

Colossal Resistivity Change of Polycrystalline NiO Thin Film Deposited by RF Magnetron Sputtering  

Kim, Youmg-Eun (Korea Institute of Science and Technology, Thin Film Material Research Center)
No, Young-Soo (Korea Institute of Science and Technology, Thin Film Material Research Center)
Park, Dong-Hee (Korea Institute of Science and Technology, Thin Film Material Research Center)
Choi, Ji-Won (Korea Institute of Science and Technology, Thin Film Material Research Center)
Chae, Keun-Hwa (Korea Institute of Science and Technology, Nano Materials Analysis Center)
Kim, Tae-Hwan (Department of Electronics and Computer Engineering, Hanyang University)
Choi, Won-Kook (Korea Institute of Science and Technology, Thin Film Material Research Center)
Publication Information
Journal of the Korean Vacuum Society / v.19, no.6, 2010 , pp. 475-482 More about this Journal
Abstract
Polycrystalline NiO thin films were deposited on glass substrate by RF magnetron sputtering using only Ar as a plasma sputter gas. based on the analysis of x-ray diffraction (XRD), NiO films had a polycrystalline cubic (NaCl type) structure. NiO thin films grown below and above $200^{\circ}C$ showed preferred orientation of (111) and (220) respectively. It showed colossal change in electrical resistivity as much a ${\sim}10^7$ order form an insulating state of $105\;{\Omega}cm$ below $200^{\circ}C$ to a conducting state of $10^{-2}{\sim}10^{-1}\;{\Omega}cm$ above $300^{\circ}C$ such a Mott metal-insulator transition (MIT) in polycrystalline.
Keywords
NiO; Resistivity; Metal-insulator transition; RF magnetron sputtering;
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