• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.261-261
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• 1999

We observed leveling-off of the resistance in granular In/InO$_x$ thin films in the zero-temperature limit. The temperature T$_b$ at which the leveling-off appears gets larger as the sheet resistance R$_n$ increases. This is consistent with the concept that the leveling-off of the resistance is due to the dissipation of the bosonic phase and that the dissipation is enhanced as the resistance increases. The magnetic field dependence of the saturated resistance R$_b$ at low temperatures fits the modified square-root cusp-like form R$_b$/R$_n$=α exp[-b(B/B$_c$-1)$^{-1/2}$] for the magnetic field in the range B$_c$$_f$ where B$_c$ is the onset magnetic field of the resistance leveling-off. α and b are constants of order 1. For B>B$_f$ tansport properties are described by the theory of the fermi insulator. From the results, we attribute the leveling-off to the dissipative quantum tunneling of vortices, which supports the models predicting the vortex-motion-induced insulating phase related with the concept like"dirty boson" [1]l and "hose metal" [2].

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.242-242
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• 2012

From the combined studies of STM and synchrotron photoemission, it has been found that a $CaF_2$ molecule is dissociated to Ca and F atoms on the $Si(114)-2{\times}1$ held at $500^{\circ}C$ at the initial adsorption stage. The Ca atoms form isolated and unique shapes of silicide molecules as shown in Fig. (a), while the F atoms are desorbed from the surface. On the other hand, beyond a $CaF_2$ coverage of 0.3 monolayer, as shown in Fig. (b), in addition to these silicide molecules, a 1-D facet [composed of (113) and (115) faces] adjacent to an etch pit has been observed, and F atoms are also detected from photoemission. These results imply that F atoms act as an etchant on Si(114) and CaF is adsorbed selectively on the (113) face of this facet. From the present studies, it has been concluded that, an insulating $CaF_2$ layer like that on Si(111) cannot be formed on Si(114), but a CaF-decorated nanofacet with a high aspect-ratio can be grown.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2005년도 추계 학술논문 발표대회
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• pp.25-28
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• 2005

This study investigates the field application of surface insulation curing method, which combined double layer bubble sheet(DBS) and thick-curing-material(TCM) for cold weather concreting. According to the test, deck slab, curing only upper section with DBS and TCM, does not make big different temperature history with that, curing both upper and bottom section during daily average temperature 6.5t. It is concluded that combination of DBS and TCM in only upper section can be safely cured in early period of time during cold water concreting. The field test was carried out with this favourable data. The upper deck slab was insulated by combination of DBS and TCM, and the construction was surrounded by tent. in order to protect from outside wind. The test result shows that the lowest temperature of deck slab indicated 6$ ^{circ}C $. It demonstrated that this curing method can resist early frost and save construction cost in the side of management and saving labor cost, compared with previous method. In addition, the column specimen, combined both form and bubble board, exhibited favorable temperature history, due to internal hydration heat insulation effect.

• 전자공학회논문지A
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• 제33A권3호
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• 한국기계가공학회지
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• 제13권6호
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• pp.61-65
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• 2014

Construction heat insulating material for construction is used in large amounts in industry. In the manufacturing process of this insulation material, a thermal insulation material is completed while a polymer in a liquid state passes through Hall breaker. At this time, the quality and form of a product are determined by a hole in the breaker according to the oil pressure of the fluid and the change of the flow velocity. The friction wear action with regard to partner movement between the two levels of quality of materials affects the performance and the lifetimes of machine parts. In this study of a friction test, SM45C, which is a material used to create brake holes, was used. PVC was used to create the specimen. Moreover, an experiment divided a lubricous state and an unlubricated condition. The resulting value over the load of a pin, the revolving speed of a disk, and the standby state of an experimental result disk could be acquired.

• 대한전기학회논문지
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• 제44권12호
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• pp.1610-1616
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$(0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere (N$_{2}$ gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. The results of the capacitance-valtage measurements indicated that the grain boundary was composed of the continuous insulating layers. The capacitance is almost unchanged below about 20[V], but decreased slowly over 20[V]. The conduction mechanism of the specimens observed in the temperature range of 25~125[.deg. C], and is divided into three regions having different mechanism as the current increased: the region I below 200[V/cm] shows the ohmic conduction. The region II between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect.ct.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 방전 플라즈마 유기절연재료 초전도 자성체연구회
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• pp.138-141
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• 2004

In this paper, we Investigated effects on impurities and water of semiconductive shield through a thermal, mechanical, and absorption experiment to estimate performance of insulating materials in power cable. Specimens had been prepared 22[kV], 154[kV] XLPE power cables and then were made of sheet form with XLPE and semiconductive shield with dimension of 0.4[mm] ~1.2[mm] of thickness from power cable. Heat capacity $({\Delta}H)$ and glass trasition temperature (Tg) of XLPE sheet were measured by DSC (Differential Scanning Calorimetry). We could know that thermal stabilities of 154[kV] are more excellent than 22[kV] from this experimental result. The strain of mechanical properties in 22[kV] and 154[kV] XLPE was 486[%], 507[%] and stress was 1.74$[kgf/mm^2]$, 1.80$[kgf/mm^2]$. The absorption contents of existing semiconductive shield were measured 710[ppm] to 1,090[ppm], and semiconductive shield of 22[kV] cable was measured 14,750[ppm] to 24,780[ppm]. We thermal and mechanical properties of 154[kV] could know more excellent than 22[kV] from this experimental result.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.80-80
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• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

• Journal of Electrical Engineering and Technology
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• 제7권5호
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• pp.765-771
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• 2012

$SF_6$ gas has been used as arc quenching and insulating medium for high and extra high voltage switching devices due to its high dielectric strength, its excellent arc-quenching capabilities, its high chemical stability and non toxicity. Despite of its significant contributions, the gas was classified as one of the greenhouse gas in the Kyoto Protocol. Thus, many researches are conducted to find out the replacement materials and to develop the $SF_6$ gas useless electrical equipment. This paper describes experiments on the temperature change-related breakdown characteristics of $SF_6$ gas ($SF_6$) and $SF_6$ liquid ($LSF_6$) in a model GIS(Gas-Insulated Switchgear) chamber in order to show the possibility of more stable and safe usages of $SF_6$ gas. The breakdown characteristics are classified into three stages, namely the gas stage of $SF_6$ according to Paschen's law, the coexisting stage of $SF_6$ gas with liquid in considerable deviation at lower temperature, and the stage of $LSF_6$ and remaining air. The result shows that the ability of the $LSF_6$ insulation is higher than the high-pressurized $SF_6$. Moreover, it reveals that the breakdown characteristics of $LSF_6$ are produced by bubble-formed $LSF_6$ evaporation and bubbles caused by high electric emission and the corona. In addition, the property of dielectric breakdown of $LSF_6$ is determined by electrode form, electrode arrangement, bubble formation and movement, arc extinguishing capacity of the media, difficulty in corona formation, and the distance between electrodes. The bubble formation and flow separation phenomena were identified for $LSF_6$. It provides fundamental data not only for $SF_6$ gas useless equipment but also for electric insulation design of high-temperature superconductor and cryogenic equipment machinery, which will be developed in future studies.