• The Transactions of the Korean Institute of Power Electronics
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• 제7권1호
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• pp.81-90
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• 2002

This paper presents an Implementation of digital high-performance position sensorless control system of Reluctance Synchronous Motor(RSM) drives with Direct Torque Control(DTC). The system consists of stator flux observer, speed and torque estimator, two digital hysteresis controllers, an optimal switching look-up table, Insulated Gate Bipolar Transistor(IGBT) voltage source inverter, and TMS320C31 DSP board. The stator flux observer Is based on the combined voltage and current model with stator flux feedback adaptive control of which inputs are current and voltage sensed on motor terminal for wide speed range. In order to prove the suggested sensorless control algorithm for industrial field application, we have some simulation and actual experiment at low and high speed range. The developed high-performance speed control by fully digital system are shown a good response characteristic of control results and high performance features using 1.0[kW] RSM having 2.57 reluctance ratio of $L_d/L_q$.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1471-1481
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• 2014

This paper presents the new power dissipation model of individual switching device in a high-level modular multilevel converter (MMC), which can be mostly used in voltage sourced converter (VSC) based high-voltage direct current (HVDC) system and flexible AC transmission system (FACTS). Also, the voltage balancing method based on sorting algorithm is newly proposed to advance the MMC functionalities by effectively adjusting switching variations of the sub-module (SM). The proposed power dissipation model does not fully calculate the average power dissipation for numerous switching devices in an arm module. Instead, it estimates the power dissipation of every switching element based on the inherent operational principle of SM in MMC. In other words, the power dissipation is computed in every single switching event by using the polynomial curve fitting model with minimum computational efforts and high accuracy, which are required to manage the large number of SMs. After estimating the value of power dissipation, the thermal condition of every switching element is considered in the case of external disturbance. Then, the arm modeling for high-level MMC and its control scheme is implemented with the electromagnetic transient simulation program. Finally, the case study for applying to the MMC based HVDC system is carried out to select the appropriate insulated-gate bipolar transistor (IGBT) module in a steady-state, as well as to estimate the proper thermal condition of every switching element in a transient state.

• Journal of Power Electronics
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• 제18권6호
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• pp.1729-1750
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• 2018

Voltage source inverters (VSIs) are widely used to drive induction motors in industry applications. The quality of output waveforms depends on the switching sequences used in pulse width modulation (PWM). In this work, all existing optimal space vector pulse width modulation (SVPWM) switching strategies are studied. The performance of existing SVPWM switching strategies is optimized to realize a tradeoff between quality of output waveforms and switching losses. This study generalizes the existing optimal switching sequences for total harmonic distortions (THDs) and switching losses for different modulation indexes and reference angles with a parameter called quality factor. This factor provides a common platform in which the THDs and switching losses of different SVPWM techniques can be compared. The optimal spatial distribution of each sequence is derived on the basis of the quality factor to minimize harmonic current distortions and switching losses in a sector; the result is the minimum ripple loss SVPWM (MRSLPWM). By employing the sequences from optimized switching maps, the proposed method can simultaneously reduce THDs and switching losses. Two hybrid SVPWM techniques are proposed to reduce line current distortions and switching losses in motor drives. The proposed hybrid SVPWM strategies are MRSLPWM 30 and MRSLPWM 90. With a low-cost PIC microcontroller (PIC18F452), the proposed hybrid SVPWM techniques and the quality of output waveforms are experimentally validated on a 2 kVA VSI based on a three-phase two-level insulated gate bipolar transistor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국해양정보통신학회 2009년도 춘계학술대회
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.

• Journal of the Korean Solar Energy Society
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• 제33권3호
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• pp.27-35
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• 2013

One of the most important factors that have a large influence on performance of the solar water heater system is performance of the solar collector, more detailedly, coating technology on the surface of the solar collector, which can provide high solar absorptance and low emittance. The core of the coating technology is to coat solar selective surfaces. In this study, various performance experiments are carried out using $Cr_2(SO_4)_3{\cdot}15H_2O$ coating technology. Here, IGBT(Insulated Gate Bipolar Transistor) of 5000A-15V was used as the surface processing rectifier which can stably output power and also can control voltage and current. The plating solution mainly contains black chrome$^{+3}$ concentration, H-y Conductivity, N-u Complex, NF Additive and NC-2 Wetter. Before applying the black chrome coating on the copper plate, optimal conditions are provided by using various preprocessing methods such as removal of fat, activation, electrolytic polishing, nickel strike, copper sulfate plating and bright neckel plating, and then the automatic continuous coating experiment are performed according to plating time and cathode current density. In the experiment, after the removal of fat, chemical polishing, nickel strike and activation processes as the preprocessing methods, the black chrome coating was performed in a plate solution temperature of $28^{\circ}C$ and a cathode current density of $18A/cm^2$ for 90 seconds. The thickness of chrome and nickel on the coated plate is $0.389{\mu}m$, $159{\mu}m$ respectively. As a result of the coating experiment, it showed the most excellent performance having a high solar absorptance of 98% and a low emittance of $5{\pm}1%$ when the black chrome surface had a thickness of $0.398{\mu}m$.

• Journal of IKEEE
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• 제26권4호
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• pp.671-680
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• 2022

In this paper, A 200kW traction motor driver that covers most of the traction motor specification of commercial electric vehicles (EV) is developed. In order to achieve high efficiency and high power density, a next-generation power semiconductors (Silicon carbide, SiC) are applied instead of power semiconductor(IGBT), which is Si based. Through hardware analysis for optimal use of SiC, expected efficiency and heat dissipation characteristics are obtained. A vector control algorithm for an IPMSM (Interior permanent magnet synchronous motor), which is mostly used in EV(Electric vehicle) traction motor, is implemented using DSP (Digital signal processor). In this paper, a prototype traction motor driver based SiC for EV is designed and manufactured, and its performance is verified through experiments.

• Journal of the Microelectronics and Packaging Society
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• 제21권4호
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• pp.1-13
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• 2014

The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologies of power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importance in the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energy efficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the current density increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meet the quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si) leads to maximum operation temperatures of nearly $200^{\circ}C$. As a result new packaging technologies are needed to face the demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermal management of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN based WBG power modules will be introduced.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제47권5호
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• pp.71-79
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• 2010

This paper presents a design of a LLC resonant controller IC. LLC resonant controller IC controls the voltage of the 2nd side by adjusting frequency the input frequency of the external resonant circuit. The clock generator is integrated to provide the pulse to the resonant circuit and its frequency is controlled by the external resistor. Also, the frequency of the VCO is adjusted by the feedback voltage. The protection circuits such as UVLO(Under Voltage Lock Out), brown out, fault detector are implemented for the reliable and stable operation. The HVG, and LVG drivers can provide the high current and voltage to the IGBT. The designed LLC resonant controller IC is fabricated with the 0.35 um 2P3M BCD process. The overall die size is $1400um{\times}1450um$, and supply voltage is 5V, 15V.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제22권3호
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• pp.415-421
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• 2021

This study analyzed the effect on the cooling performance of the channel shape of a heat sink for an insulated gate bipolar transistor (IGBT). A serpentine channel was used for this analysis, and the parameter for the analysis was the number of curves. The analysis was conducted using computational fluid dynamics with the commercial software ANSYS fluent. One curve in the channel improved the heat dissipation performance of the heat sink by up to 8% compared to a straight-channel heat sink. However, two curves in the channel could not improve the heat discharge performance further. Instead, the two curves caused a higher pressure drop, which induces parasitic loss for the pumping of coolant. The pressure drop of the two-curve channel case was 2.48-2.55 times larger than that of a one-curve channel. This higher pressure drop decreased the heat discharge efficiency of the heat sink with two curves. The discharge heat per unit pressure drop was calculated, and the result of the straight heat sink was highest among the analyzed cases. This means that the heat discharge efficiency of the straight heat sink is the highest.