• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.10
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• pp.1467-1472
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• 2014

This paper study on powering characteristic on speed variation of propulsion system of prototype 8200 electric locomotive propulsion system through simulation modeling. For this purpose, it being applied in the field of railway IGBT (Insulated Gate Bipolar Transistor) elements are used. Converter was performed PLL (Phase-Locked Loop) control method that is used to control the phase and output voltage, and the inverter was carried an indirect vector control method to control the speed of traction motor. The results of simulation by modeling and experimental unit, we was confirmed that converter is controlled a unity power factor and output voltage by reference voltage. Also traction motor was controlled by indirect vector control and SVPWM inverter switching method very well.

• Journal of Power Electronics
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• v.15 no.2
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• pp.299-308
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• 2015

This study proposes four novel pulse width modulation (PWM) shoot-through control methods for impedance source (IS) galvanically isolated DC-DC converters. These methods are derived from a PWM control method with shifted shoot-through introduced by the authors in 2012. In contrast to the baseline solution, where the shoot-through states are generated by the simultaneous conduction of all transistors in the inverter bridge, our new approach is based on the shoot-through generation by one inverter leg. The idea is to increase the number of soft-switched transients and, therefore, decrease the dynamic losses of the front-end inverter. All the proposed approaches are experimentally verified through an insulated-gate bipolar transistor-based IS DC-DC converter. Conclusions are drawn in accordance with the results of the switching loss analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.110-111
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• 2006

이중 에피층을 가지는 SOI (Silicon-On-Insulator) RESURF(REduced SURface Field) LIGBT(Lateral Insulated Gate Bipolar Transistor) 소자의 에피층 두께에 따른 항복전압 특성을 분석하였다. 이중 에 피층 구조를 가지는 SOI RESURF LIGBT 소자는 전하보상효과를 얻기 위해 기존 LIGBT 소자의 n 에피로 된 영역을 n/p 에피층의 이중 구조로 변경한 소자로 n/p 에피층 영역내의 전하간 상호작용에 의해 에피 영역 전체가 공핍됨으로써 높은 에피 영역농도에서도 높은 항복전압을 얻을 수 있는 소자이다. 본 논문에서는 LIGBT 에피층의 전체 두께와 농도를 고정한 상태에서 n/p 에피층의 두께가 변하는 경우에 항복전압 특성의 변화에 대해 simulation을 통해 분석하였다.

• Proceedings of the KIEE Conference
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• 2004.11b
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• pp.63-65
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• 2004

The recent advancement in the power electronic technique has increased the use of induction motor fed by inverter using high-frequency switching devices. Also the tendency is toward larger size and higher voltage. Therefore, The IGBT (Insulated-Gate Bipolar Transistor) that is high switching frequency element has been using increase. But, The switching surge voltage was occurred by high switching frequency of inverter has appeared a voltage doubling in the motor input terminal due to mismatching of cable characteristic impedance and motor characteristic impedance. Actually, The Switching surge voltage became the major cause to occur the insulation failure by serious voltage stress in the stator winding of induction motor. The short during rise time of switching surge and cable length is increased, the maximum transient voltage seen at the motor terminals increases. In this paper, Analyzed switching surge transient voltage of power cable pulling is used EMTP(Electromagnetic Transient Program) at the induction motor terminal and in cable.

• Proceedings of the KIPE Conference
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• 2010.11a
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• pp.343-344
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• 2010

화석연료의 고갈로 인하여 친환경 자동차에 대한 연구와 상용화가 급속도로 진행되면서 점점 대형 차종으로 그 범위가 넓어지고 있다. 대형 차종에 적용되는 전기동력 시스템의 MCU(Motor Control Unit), GCU(Generator Control Unit), DC/DC 컨버터 등과 같은 전장품도 그 용량이 커지면서 상용화를 위해 효율적인 측면도 많이 부각되지만 스위칭 소자, 변압기, 초크, 다이오드 등에서 동작으로 인해 열이 발생하고 제품의 구조상 밀폐된 공간에 장착이 되기 때문에 발열로 인한 동작의 신뢰성과 제품의 내구성에 큰 영향을 미치게 된다. 그중 가장 발열이 심한 IGBT(Insulated Gate Bipolar Transistor) 등과 같은 스위칭 소자에서 발생하는 열을 효과적으로 냉각시키기 위해 수냉구조가 필수적이며 동일한 조건의 수압, 유량에 보다 높은 방열특성을 가지기 위해 냉각구조에 대한 해석이 제품을 개발 전에 선행되어야 한다. 본 논문에서는 유로의 냉각핀 형상과 유로 구조에 따라 방열특성이 어떠한 차이가 있는지 시뮬레이션 프로그램을 통하여 비교하고, 모사발열체를 이용한 방열부의 냉각 성능 시험과 다이나모 환경의 최대 출력 시험을 통하여 방열 특성을 확인하였다.

• Proceedings of the KSR Conference
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• 2008.11b
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• pp.1710-1716
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• 2008

The Loop Heat Pipe (LHP) operates to pump the working fluid by means of the capillary force in a wick structure. Particularly, it is difficult to design and manufacture the evaporator consisted of a grooved container and a compensation chamber as well as the wick structure. This study is related to design and manufacture the grooved container coupled with wick structure, the properties of the wick structure such as the permeability, the porosity, and the maximum capillary pressure were measured to apply the cooling technology for Insulated Gate Bipolar Transistor (IGBT). The container of the LHP was manufactured by the electrical discharge process and the wick structure was sintered with the nickel particle by an axial-press apparatus with the pulse electronic discharge. As results, the properties of the wick were experimentally obtained about 60% of the porosity, 35kPa of the maximum capillary force and $1.53{\times}10-13m2$ of the permeability.

• Journal of the Korean Society of Safety
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• v.34 no.1
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• pp.21-26
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• 2019

This paper is purposed to develop hardware for controlling abnormal temperature that can occur environment and component itself in PCS. In order to be purpose, the hardware which is four part(sensing, PLC, monitoring and output) keep detecting temperature for critical components of PCS and can control the abnormal temperature. Apply to the hardware, it is selected to PV power generation facilities of 20 kW in Cheong-ju city and measured the data for one year in 2017. Through the temperature data, it is found critical components of four(discharge resistance, DC capacitor, IGBT, DSP board) and entered the setting value for operating the fan. The setting values for operating the fan are up to $130^{\circ}C$ in discharge resistance, $60^{\circ}C$ in DC capacitor, $55^{\circ}C$ in IGBT and DSP board. The hardware is installed at the same PCS(20 kW in Cheong-ju city) in 2018 and the power generation output is analyzed for the five days with the highest atmospheric temperature(Clear day) in July and August in 2017 and 2018 years. Therefore, the power generation output of the PV system with hardware increased up to 4 kWh.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1356-1361
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• 2018

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.